Scalable large-area solid-state neutron detector with continuous p–n junction and extremely low leakage current

2014 ◽  
Vol 763 ◽  
pp. 260-265 ◽  
Author(s):  
Kuan-Chih Huang ◽  
Rajendra Dahal ◽  
James J.-Q. Lu ◽  
Adam Weltz ◽  
Yaron Danon ◽  
...  
Keyword(s):  
Solid State ◽  
Leakage Current ◽  
Neutron Detector ◽  
Large Area ◽  
Low Leakage ◽  
Low Leakage Current

Self-powered micro-structured solid state neutron detector with very low leakage current and high efficiency

2012 ◽  
Vol 100 (24) ◽  
pp. 243507 ◽  
Author(s):  
R. Dahal ◽  
K. C. Huang ◽  
J. Clinton ◽  
N. LiCausi ◽  
J.-Q. Lu ◽  
...  
Keyword(s):  
Solid State ◽  
Leakage Current ◽  
Neutron Detector ◽  
High Efficiency ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Self Powered

Continuous p-n junction with extremely low leakage current for micro-structured solid-state neutron detector applications

2013 ◽  
Author(s):  
Kuan-Chih Huang ◽  
Rajendra Dahal ◽  
James J.-Q. Lu ◽  
Yaron Danon ◽  
Ishwara B. Bhat
Keyword(s):  
Solid State ◽  
Leakage Current ◽  
Neutron Detector ◽  
Low Leakage ◽  
Low Leakage Current

Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on In-House Substrate with Low Threading Dislocation Density

2011 ◽  
Vol 679-680 ◽  
pp. 694-697 ◽  
Author(s):  
Fujiwara Hirokazu ◽  
Masaki Konishi ◽  
T. Ohnishi ◽  
T. Nakamura ◽  
Kimimori Hamada ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Leakage Current ◽  
Surface Defects ◽  
High Yield ◽  
Threading Dislocation ◽  
Electrical Characteristics ◽  
Large Area ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Threading Dislocation Density

The impacts of threading dislocations, surface defects, donor concentration, and schottky Schottky barrier height on the reverse IV characteristic of silicon carbide (SiC) junction barrier schottky Schottky (JBS) diodes were investigated. The 100 A JBS diodes were fabricated on 4H-SiC 3-inch N-type wafers with two types of threading dislocation density. The typical densities are were 0.2×104 and 3.8×104 cm-2, respectively. The improvement of vIt was found that variations in the leakage current and the high yield of large area JBS diodes werecould be were obtained improved by using a wafer with a low threading dislocation density. In the range of low leakage current, the investigation shows showed a correlation between leakage current and threading dislocation density.

Compact Spice Modeling and Design Optimization of Low Leakage a-Si:H TFTs for Large-Area Imaging Systems

1998 ◽  
Vol 507 ◽  
Author(s):  
R.V.R. Murthy ◽  
D. Pereira ◽  
B. Park ◽  
A. Nathan ◽  
S.G. Chamberlain
Keyword(s):  
Leakage Current ◽  
Reverse Current ◽  
Contact Layer ◽  
Large Area ◽  
Thermal Generation ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Trap Assisted Tunneling ◽  
Current Characteristics ◽  
Gap States

ABSTRACTWe present a SPICE model that takes into account the different mechanisms contributing to leakage current in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). The main sources of leakage current in these devices have been identified to be the parasitic reverse-biased p-i-n diode at the vicinity of the drain as well as diffusion of phosphorous atoms from micro-crystalline (n+ μc-Si:H) contact layer into the intrinsic a-Si:H region. The latter gives rise to ohmic conduction which dominates at very low drain voltages (< I V) and very low gate voltages (< 5 V). At higher gate voltages (5V ≤ VG ≤ 20 V), the reverse current of the parasitic p-i-n diode can be attributed to thermal generation of electrons from the valence to conduction bands through the mid-gap states in the a-Si:H. At even higher gate voltages (> 20 V), the reverse current is due to trap-assisted tunneling, whereby the electrons tunnel to the conduction band via the mid-gap states. A systematic characterization of TFTs with different a-Si:H layer thicknesses shows that the optimal thickness for low leakage current is around 50 nm. The bias dependent leakage current behavior has been modeled and implemented in SPICE using simple circuit elements based on voltage controlled current sources (VCCS). Simulated and measured reverse leakage current characteristics are in reasonable agreement.

scholarly journals First-time synthesis of a magnetoelectric core–shell composite via conventional solid-state reaction

Nanoscale ◽  
2020 ◽  
Vol 12 (29) ◽  
pp. 15677-15686
Author(s):  
Leonard F. Henrichs ◽  
Xiaoke Mu ◽  
Torsten Scherer ◽  
Uta Gerhards ◽  
Stefan Schuppler ◽  
...  
Keyword(s):  
Solid State ◽  
Leakage Current ◽  
Solid State Reaction ◽  
Core Shell ◽  
Conventional Solid State Reaction ◽  
Magnetoelectric Composites ◽  
Low Leakage ◽  
Low Leakage Current ◽  
First Time ◽  
Shell Composite

Novel magnetoelectric core–shell ceramics exhibit characteristics of several traditional magnetoelectric composites and combine exceptional magnetoelectric coupling with low leakage current, high density and absence of substrate clamping effects.

Large area GaN Schottky photodiode with low leakage current

2004 ◽  
Vol 40 (17) ◽  
pp. 1080 ◽  
Author(s):  
S. Aslam ◽  
R.E. Vest ◽  
D. Franz ◽  
F. Yan ◽  
Y. Zhao
Keyword(s):  
Leakage Current ◽  
Large Area ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Schottky Photodiode

High nonlinearity and low leakage current SnO2 varistor ceramics by co-doping with yttrium and tantalum

2021 ◽  
Vol 285 ◽  
pp. 129120
Author(s):  
Wenxin Liang ◽  
Hongfeng Zhao ◽  
Xiaoji Meng ◽  
Shaohua Fan ◽  
Qingyun Xie
Keyword(s):  
Leakage Current ◽  
Co Doping ◽  
High Nonlinearity ◽  
Low Leakage ◽  
Low Leakage Current

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

2018 ◽  
Vol 65 (2) ◽  
pp. 680-686 ◽  
Author(s):  
Cheng-Jung Lee ◽  
Ke-Jing Lee ◽  
Yu-Chi Chang ◽  
Li-Wen Wang ◽  
Der-Wei Chou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Organic Transistors ◽  
Barium Zirconate ◽  
Low Leakage ◽  
Low Leakage Current
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