Thermal donor generation in Czochralski silicon particle detectors

2006 ◽  
Vol 568 (1) ◽  
pp. 56-60 ◽  
Author(s):  
M. Bruzzi ◽  
J. Härkönen ◽  
Z. Li ◽  
P. Luukka ◽  
D. Menichelli ◽  
...  
Keyword(s):  
Silicon Particle ◽  
Particle Detectors ◽  
Czochralski Silicon ◽  
Thermal Donor

Qualification of a new supplier for silicon particle detectors

2013 ◽  
Vol 732 ◽  
pp. 74-78 ◽  
Author(s):  
M. Dragicevic ◽  
U. Bartl ◽  
T. Bergauer ◽  
E. Frühwirth ◽  
S. Gamerith ◽  
...  
Keyword(s):  
Silicon Particle ◽  
Particle Detectors

Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation

1997 ◽  
Vol 57-58 ◽  
pp. 189-196 ◽  
Author(s):  
Alexander G. Ulyashin ◽  
Yu.A. Bumay ◽  
Reinhart Job ◽  
G. Grabosch ◽  
D. Borchert ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hydrogen Plasma ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors

2005 ◽  
pp. 217-222
Author(s):  
L.F. Makarenko ◽  
F.P. Korshunov ◽  
S.B. Lastovski ◽  
S.B. Lastovskii ◽  
N.M. Kazuchits ◽  
...  
Keyword(s):  
Silicon Particle ◽  
Particle Detectors ◽  
Defect Reactions

Kinetic Model of Thermal Donor Evolution

1997 ◽  
Vol 469 ◽  
Author(s):  
K. F. Kelton ◽  
R. Falster
Keyword(s):  
Interstitial Oxygen ◽  
Oxygen Loss ◽  
Free Oxygen ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Cluster Evolution ◽  
Oxygen Precipitation ◽  
High Diffusion Rate ◽  
Normal Diffusion ◽  
Small Clusters

ABSTRACTKinetic aspects of thermal donor (TD) formation in Czochralski silicon are shown to be consistent with the evolution of small oxygen clusters, as described within the classical theory of nucleation. Predictions for TD generation and interstitial oxygen loss are presented. Favorable agreement with experimental data requires that the rate constants describing cluster evolution be increased over those expected for a oliffusion-limited flux based on a normal diffusion coefficient for oxygen in silicon. This may signal an anomalously high diffusion rate for temperatures less than 500°C, as has been suggested by others. However, it may instead signal an enhanced concentration of free oxygen near clusters smaller than the critical size for nucleation. This is expected when the interfacial attachment rates become comparable with the rates at which oxygen atoms arrive in the vicinity of the sub-critical clusters. The link between thermal donor generation and oxygen precipitation processes demonstrated here provides a consistent framework for better understanding and controlling oxygen precipitation in silicon. Further, the kinetic TD generation and oxygen loss data provide a new window into the dynamical processes for small clusters, which underlie all nucleation phenomena.

Thermal donor formation in electron‐irradiated Czochralski silicon

1986 ◽  
Vol 49 (21) ◽  
pp. 1435-1437 ◽  
Author(s):  
Johan Svensson ◽  
Bengt G. Svensson ◽  
J. Lennart Lindström
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation

Oxygen-Related Thermal Donor Formation in Dopant-Rich Compensated Czochralski Silicon

2014 ◽  
Vol 61 (5) ◽  
pp. 1241-1245 ◽  
Author(s):  
Florent Tanay ◽  
Sebastien Dubois ◽  
Jordi Veirman ◽  
Nicolas Enjalbert ◽  
Julie Stendera ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation

Defect characterization in silicon particle detectors irradiated with Li ions

2006 ◽  
Vol 53 (2) ◽  
pp. 589-594 ◽  
Author(s):  
M. Scaringella ◽  
D. Menichelli ◽  
A. Candelori ◽  
R. Rando ◽  
M. Bruzzi
Keyword(s):  
Silicon Particle ◽  
Defect Characterization ◽  
Particle Detectors
Sign in / Sign up

Export Citation Format

Share Document