Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization

2004 ◽  
Vol 24 (1-2) ◽  
pp. 289-291 ◽  
Author(s):  
Do-Heyoung Kim ◽  
Young Jae Kim ◽  
Jun-Hyung Park ◽  
Jin Hyeok Kim
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Copper Metallization ◽  
Tin Films ◽  
Layer Deposition

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

scholarly journals Properties and morphology of TiN films deposited by atomic layer deposition

2014 ◽  
Vol 19 (2) ◽  
pp. 144-149 ◽  
Author(s):  
Siyi Xie ◽  
Jian Cai ◽  
Qian Wang ◽  
Lu Wang ◽  
Ziyu Liu
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tin Films ◽  
Layer Deposition

Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzen-cyclohexadiene Ru(0) as a seed layer for copper metallization

2013 ◽  
Vol 546 ◽  
pp. 2-8 ◽  
Author(s):  
Seungmin Yeo ◽  
Sang-Hyeok Choi ◽  
Ji-Yoon Park ◽  
Soo-Hyun Kim ◽  
Taehoon Cheon ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Copper Metallization ◽  
Layer Deposition

Obtaining low resistivity (∼100 μΩ cm) TiN films by plasma enhanced atomic layer deposition using a metalorganic precursor

2018 ◽  
Vol 36 (5) ◽  
pp. 051505 ◽  
Author(s):  
Igor Krylov ◽  
Ekaterina Zoubenko ◽  
Kamira Weinfeld ◽  
Yaron Kauffmann ◽  
Xianbin Xu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tin Films ◽  
Low Resistivity ◽  
Layer Deposition

In situspectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition

2006 ◽  
Vol 100 (2) ◽  
pp. 023534 ◽  
Author(s):  
E. Langereis ◽  
S. B. S. Heil ◽  
M. C. M. van de Sanden ◽  
W. M. M. Kessels
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tin Films ◽  
Layer Deposition

Properties of ultrathin platinum deposited by atomic layer deposition for nanoscale copper-metallization schemes

2007 ◽  
Vol 22 (5) ◽  
pp. 1292-1298 ◽  
Author(s):  
Yu Zhu ◽  
Kathleen A. Dunn ◽  
Alain E. Kaloyeros
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Process Window ◽  
Copper Metallization ◽  
Oxygen Impurity ◽  
Copper Electroplating ◽  
Gas Purge ◽  
Layer Deposition ◽  
Rate Versus

A thermal metalorganic atomic layer deposition (ALD) process was developed for the in situ, sequential growth of Pt/TaNx stacks for use as barrier/seed stacks for subsequent copper electroplating. Ultrathin platinum films were deposited by alternating pulses of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and oxygen (O2) as co-reactants. An ALD process window was established and optimized by investigating saturation of Pt film-growth rate versus MeCpPtMe3 and O2 exposure as controlled by the length of reactant pulses and the duration of the inert gas purge cycles separating the reactant pulses. The resulting low-temperature (300 °C) ALD Pt process yielded uniform and continuous Pt films with typical carbon and oxygen impurity levels around, respectively, 2.5 and 1 at.%. Film conformality was nearly 100% in 120-nm trench structures with 11:1 aspect ratio.

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