Properties of ultrathin platinum deposited by atomic layer deposition for nanoscale copper-metallization schemes

2007 ◽  
Vol 22 (5) ◽  
pp. 1292-1298 ◽  
Author(s):  
Yu Zhu ◽  
Kathleen A. Dunn ◽  
Alain E. Kaloyeros
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Process Window ◽  
Copper Metallization ◽  
Oxygen Impurity ◽  
Copper Electroplating ◽  
Gas Purge ◽  
Layer Deposition ◽  
Rate Versus

A thermal metalorganic atomic layer deposition (ALD) process was developed for the in situ, sequential growth of Pt/TaNx stacks for use as barrier/seed stacks for subsequent copper electroplating. Ultrathin platinum films were deposited by alternating pulses of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and oxygen (O2) as co-reactants. An ALD process window was established and optimized by investigating saturation of Pt film-growth rate versus MeCpPtMe3 and O2 exposure as controlled by the length of reactant pulses and the duration of the inert gas purge cycles separating the reactant pulses. The resulting low-temperature (300 °C) ALD Pt process yielded uniform and continuous Pt films with typical carbon and oxygen impurity levels around, respectively, 2.5 and 1 at.%. Film conformality was nearly 100% in 120-nm trench structures with 11:1 aspect ratio.

Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemes

2004 ◽  
Vol 19 (2) ◽  
pp. 447-453 ◽  
Author(s):  
Oscar van der Straten ◽  
Yu Zhu ◽  
Kathleen Dunn ◽  
Eric T. Eisenbraun ◽  
Alain E. Kaloyeros
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Process Window ◽  
Copper Metallization ◽  
Oxygen Impurity ◽  
Gas Purge ◽  
Layer Deposition ◽  
Rate Versus

A metal–organic thermal atomic layer deposition (ALD) approach was developed for the growth of ultrathin tantalum nitride (TaNx) films by alternate pulses of tert-butylimido trisdiethylamido tantalum (TBTDET) and ammonia (NH3). An optimized ALD process window was established by investigating saturation of film-growth rate versus TBTDET and NH3 exposures, as controlled by the length of reactant pulses and the duration of the inert gas purge cycles separating the reactant pulses. The resulting low-temperature (250 °C) ALD process yielded uniform, continuous, and conformal TaNx films with a Ta:N ratio of 1:1. Carbon and oxygen impurity levels were in the 5–8 at.% range. Associated film conformality in 100-nm trench structures with 11:1 aspect ratio was nearly 100%.

Atomic Layer Deposition of Chalcogenides for Next-Generation Phase Change Memory

2021 ◽  
Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Phase Change Memory ◽  
Film Surface ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Growth Technique ◽  
Layer Deposition ◽  
Change Memory

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

scholarly journals Room-temperature plasma-enhanced atomic layer deposition of ZnO: Film growth dependence on the PEALD reactor configuration

2017 ◽  
Vol 326 ◽  
pp. 281-290 ◽  
Author(s):  
Mari Napari ◽  
Manu Lahtinen ◽  
Alexey Veselov ◽  
Jaakko Julin ◽  
Erik Østreng ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Zno Film ◽  
Temperature Plasma ◽  
Reactor Configuration ◽  
Layer Deposition

Atomic layer deposition of noble metals: Exploration of the low limit of the deposition temperature

2004 ◽  
Vol 19 (11) ◽  
pp. 3353-3358 ◽  
Author(s):  
Titta Aaltonen ◽  
Mikko Ritala ◽  
Yung-Liang Tung ◽  
Yun Chi ◽  
Kai Arstila ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Crystal Orientation ◽  
Deposition Temperature ◽  
Noble Metals ◽  
Film Growth ◽  
Atomic Layer ◽  
Temperature Limit ◽  
Pure Oxygen ◽  
Layer Deposition

The low limit of the deposition temperature for atomic layer deposition (ALD) of noble metals has been studied. Two approaches were taken; using pure oxygen instead of air and using a noble metal starting surface instead of Al2O3. Platinum thin films were obtained by ALD from MeCpPtMe3 and pure oxygen at deposition temperature as low as 200 °C, which is significantly lower than the low-temperature limit of300 °C previously reported for the platinum ALD process in which air was used as the oxygen source. The platinum films grown in this study had smooth surfaces, adhered well to the substrate, and had low impurity contents. ALD of ruthenium, on the other hand, took place at lower deposition temperatures on an iridium seed layer than on an Al2O3 layer. On iridium surface, ruthenium films were obtained from RuCp2 and oxygen at 225 °C and from Ru(thd)3 and oxygen at 250 °C, whereas no films were obtained on Al2O3 at temperatures lower than 275 and 325 °C, respectively. The crystal orientation of the ruthenium films was found to depend on the precursor. ALD of palladium from a palladium β-ketoiminate precursor and oxygen at 250 and 275 °C was also studied. However, the film-growth rate did not saturate to a constant level when the precursor pulse times were increased.

Surface and subsurface film growth of titanium dioxide on polydimethylsiloxane by atomic layer deposition

2019 ◽  
Vol 493 ◽  
pp. 779-786 ◽  
Author(s):  
Sarah Hashemi Astaneh ◽  
Gregory Jursich ◽  
Cortino Sukotjo ◽  
Christos G. Takoudis
Keyword(s):  
Titanium Dioxide ◽  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Layer Deposition

Atomic Layer Deposition of TiN below 600 K Using N2H4

2018 ◽  
Vol 282 ◽  
pp. 232-237
Author(s):  
Adam Hinckley ◽  
Anthony Muscat
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
Titanium Nitride ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Detection Limits ◽  
Atomic Layer ◽  
Volatile Species ◽  
X Ray ◽  
Layer Deposition

Atomic layer deposition (ALD) was used to grow titanium nitride (TiN) on SiO2with TiCl4and N2H4. X-ray photoelectron spectroscopy (XPS) and ellipsometry were used to characterize film growth. A hydrogen-terminated Si (Si-H) surface was used as a reference to understand the reaction steps on SPM cleaned SiO2. The growth rate of TiN at 573 K doubled on Si-H compared to SiO2because of the formation of Si-N bonds. When the temperature was raised to 623 K, O transferred from Ti to Si to form Si-N when exposed to N2H4. Oxygen and Ti could be removed at 623 K by TiCl4producing volatile species. The added surface reactions reduce the Cl in the film below detection limits.

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