Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance

2018 ◽  
Vol 81 ◽  
pp. 1-6 ◽  
Author(s):  
P.M. Lenahan ◽  
M.A. Anders ◽  
R.J. Waskiewicz ◽  
A.J. Lelis
Keyword(s):  
Magnetic Resonance ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrically Detected Magnetic Resonance ◽  
Bias Temperature Instabilities

Microscopic Difference between Dry and Wet Oxidations of C-Face 4H-SiC MOSFFETs Studied by Electrically Detected Magnetic Resonance

2016 ◽  
Vol 858 ◽  
pp. 619-622
Author(s):  
Yohei Kagoyama ◽  
Mitsuo Okamoto ◽  
Shinsuke Harada ◽  
Ryo Arai ◽  
Takahide Umeda
Keyword(s):  
Magnetic Resonance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Wet Oxidation ◽  
Hydrogen Atoms ◽  
Interface Defects ◽  
Dry Oxidation ◽  
Electrically Detected Magnetic Resonance

We studied interface defects of C-face 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by means of electrically-detected-magnetic-resonance (EDMR) spectroscopy. EDMR measurements were carried out on opposite types of C-face MOSFETs, which were prepared by dry oxidation and wet oxidation, and we found EDMR signals of interface defects from both the MOSFETs. Judging from their spectroscopic features, the interface signals of the two MOSFETs are assigned to be the same type, and we call them “C-face defects.” The density of C-face defects was found to be larger in the dry-oxide MOSFETs than in the wet-oxide MOSFETs. It is also revealed that part of C-face defects in wet-oxide MOSFETs are coupled with hydrogen atoms.

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