Temperature dependence on RF avalanche breakdown of RF mosfets in the impact ionization region

2015 ◽  
Vol 57 (4) ◽  
pp. 817-820
Author(s):  
Chie-In Lee ◽  
Wei-Cheng Lin ◽  
Yan-Ting Lin
Keyword(s):  
Temperature Dependence ◽  
Impact Ionization ◽  
Avalanche Breakdown ◽  
Ionization Region ◽  
The Impact

DC extraction of the base and emitter resistances in polysilicon-emitter npn BJTs

1996 ◽  
Vol 74 (S1) ◽  
pp. 172-176 ◽  
Author(s):  
V. Van ◽  
M. J. Deen ◽  
J. Kendall ◽  
D. S. Malhi ◽  
S. Voinigescu ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Junction Transistors ◽  
New Techniques ◽  
Current Range ◽  
Base Current ◽  
Ionization Yield ◽  
Ionization Method ◽  
Ionization Region ◽  
Polysilicon Emitter ◽  
The Impact

Five DC techniques of extracting the base and emitter resistances of polysilicon-emitter npn bipolar junction transistors (BJTs) are presented and compared. The five techniques include three previously published techniques and two new techniques, constant base current and IB–IE plane fitting. Application of the five methods to a 0.8 × 16 μm2 npn BJT shows that all but the method of impact ionization yield comparable Rc and Rbb values at high currents. The impact ionization method, which extracts Rc and Rbb in the impact ionization region and at low base currents, yields markedly different Rc and Rbb values, indicating that the values of the parasitic resistances depend on the current range over which the extraction is performed. Thus the choice of which method is best to use depends on the current range over which Rc and Rbb are to be measured, and the validity of the assumptions used in the method when applied to the device.

Comprehensive Study of Impact Ionization Coefficients of 4H-SiC

2004 ◽  
Vol 815 ◽  
Author(s):  
T. Hatakeyama ◽  
T. Watanabe ◽  
K. Kojima ◽  
N. Sano ◽  
T. Shinohe ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Impact Ionization ◽  
Avalanche Breakdown ◽  
Doping Density ◽  
Electric Field Dependence ◽  
Saturation Velocity ◽  
Large Anisotropy ◽  
Ionization Coefficients ◽  
The Impact ◽  
Comprehensive Study

AbstractThe electric field dependence and anisotropy of the impact ionization coefficients of 4H-SiC are investigated by means of the avalanche breakdown behavior of p+n diodes. The breakdown voltages as a function of doping density and the multiplication factors of a leakage current are obtained using p+n diode fabricated on (0001) and (1120) 4H-SiC epitaxial wafers. The obtained impact ionization coefficients show large anisotropy; the breakdown voltage of a p+n diode on (1120) wafer is 60% of that on (0001) wafer. We have shown that anisotropy of the impact ionization coefficients is attributable to the anisotropy of saturation velocity originated from the electronic structure of 4H-SiC.

Avalanche Breakdown Due to 3-D Effects in the Impact-Ionization MOS (I-MOS) on SOI: Reliability Issues

2008 ◽  
Vol 55 (6) ◽  
pp. 1373-1378 ◽  
Author(s):  
FrÉdÉric Mayer ◽  
Cyrille Le Royer ◽  
Denis Blachier ◽  
Laurent Clavelier ◽  
Simon Deleonibus
Keyword(s):  
Impact Ionization ◽  
Avalanche Breakdown ◽  
The Impact

scholarly journals Temperature Dependence Study of Mesa-Type InGaAs/InAlAs Avalanche Photodiode Characteristics

2017 ◽  
Vol 2017 ◽  
pp. 1-5 ◽  
Author(s):  
Jack Jia-Sheng Huang ◽  
H. S. Chang ◽  
Yu-Heng Jan ◽  
C. J. Ni ◽  
H. S. Chen ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Breakdown Voltage ◽  
Dark Current ◽  
High Speed ◽  
Impact Ionization ◽  
Low Noise ◽  
Bandgap Energy ◽  
Avalanche Breakdown ◽  
Recombination Mechanism ◽  
Avalanche Breakdown Voltage

Avalanche photodiodes (APDs) are key optical receivers due to their performance advantages of high speed, high sensitivity, and low noise. The most critical device parameters of APD include the avalanche breakdown voltage and dark current. In this work, we study the temperature dependence of the breakdown voltage and dark current of the mesa-type APD over a wide temperature range of 20–145°C. We institute an empirical model based on impact ionization processes to account for the experimental data. It is shown that highly stable breakdown characteristics of mesa-type APD can be attained with the optimization of the multiplication layer design. We have achieved excellent stability of avalanche breakdown voltage with a temperature coefficient of 0.017 V/°C. The temperature dependence of dark current is attributed to generation-recombination mechanism. The bandgap energy is estimated to be about 0.71 eV based on the temperature variation of dark current, in good agreement with the value for InGaAs.

Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN

2003 ◽  
Vol 94 (1) ◽  
pp. 423-430 ◽  
Author(s):  
Louis Tirino ◽  
Michael Weber ◽  
Kevin F. Brennan ◽  
Enrico Bellotti ◽  
Michele Goano
Keyword(s):  
Temperature Dependence ◽  
Impact Ionization ◽  
Zinc Blende ◽  
Ionization Coefficients ◽  
The Impact

Low-voltage Avalanche Breakdown in AlGaN Multi-quantum Wells

2006 ◽  
Vol 955 ◽  
Author(s):  
Shengkun Zhang ◽  
X. Zhou ◽  
Wubao Wang ◽  
R. R. Alfano ◽  
A. M. Dabiran ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Impact Ionization ◽  
Low Voltage ◽  
Defect Density ◽  
Control Sample ◽  
Avalanche Breakdown ◽  
Ionization Coefficient ◽  
The Impact ◽  
Injection Modes

ABSTRACTIn this work, electro-luminescence (EL) of a AlGaN p-i-n diode have been investigated in both avalanche and injection modes. The active i-region of the diode consists of Al0.1Ga0.9N/Al0.15Ga0.85N MQWs. Strong interband luminescence from the Al0.1Ga0.9N active layers was observed when operating the device in both avalanche and injection modes. The threshold voltage for avalanche breakdown is as low as 9 V. This indicates that the impact ionization coefficient of electrons is greatly enhanced in these Al0.1Ga0.9N/Al0.15Ga0.85N MQWs comparing to AlGaN bulk materials. Polarization-induced electric fields in the Al0.1Ga0.9N well layers are believed to be responsible for the enhancement of the ionization coefficient. In a control sample that has higher defect density, the electroluminescence was dominated by long-wavelength emissions, which results from impact ionizations of the defect levels.

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