Physical operation and device design of short-channel tunnel field-effect transistors with graded silicon-germanium heterojunctions

Journal of Applied Physics ◽

10.1063/1.4795777 ◽

2013 ◽

Vol 113 (13) ◽

pp. 134507 ◽

Cited By ~ 20

Author(s):

Chun-Hsing Shih ◽

Nguyen Dang Chien

Keyword(s):

Silicon Germanium ◽

Field Effect ◽

Field Effect Transistors ◽

Device Design ◽

Short Channel

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Analytical Modeling of Threshold Voltage of Short-Channel Strained-Si on Silicon–Germanium-On-Insulator (SGOI) Metal–Oxide–Semiconductor Field-Effect Transistors with Localized Charges

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2014.3332 ◽

2014 ◽

Vol 11 (1) ◽

pp. 165-172 ◽

Cited By ~ 1

Author(s):

Mirgender Kumar ◽

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Silicon Germanium ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Strained Si

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Short-channel effect and device design of extremely scaled tunnel field-effect transistors

Microelectronics Reliability ◽

10.1016/j.microrel.2014.09.028 ◽

2015 ◽

Vol 55 (1) ◽

pp. 31-37 ◽

Cited By ~ 11

Author(s):

Nguyen Dang Chien ◽

Chun-Hsing Shih

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Device Design ◽

Short Channel ◽

Short Channel Effect ◽

Channel Effect

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A novel analytical model for short channel heterostructure field effect transistors

Solid-State Electronics ◽

10.1016/s0038-1101(97)00291-8 ◽

1998 ◽

Vol 42 (4) ◽

pp. 605-612

Author(s):

Sang-Ho Song ◽

Dong Myong Kim

Keyword(s):

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel ◽

Heterostructure Field Effect Transistors

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Impact of geometry aspect ratio on 10-nm gate-all-around silicon-germanium nanowire field effect transistors

14th IEEE International Conference on Nanotechnology ◽

10.1109/nano.2014.6968188 ◽

2014 ◽

Cited By ~ 5

Author(s):

Pei-Jung Chao ◽

Yiming Li

Keyword(s):

Aspect Ratio ◽

Silicon Germanium ◽

Field Effect ◽

Field Effect Transistors

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Dependence of Short-Channel Effects on Semiconductor Bandgap in Tunnel Field-Effect Transistors

Journal of Physics Conference Series ◽

10.1088/1742-6596/1034/1/012003 ◽

2018 ◽

Vol 1034 ◽

pp. 012003

Author(s):

Nguyen Dang Chien ◽

Chun-Hsing Shih ◽

Hung-Jin Teng ◽

Cong-Kha Pham

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Simple Model for Gate-Voltage Dependent Parasitic Resistancein Short Channel Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l535 ◽

1991 ◽

Vol 30 (Part 2, No. 4A) ◽

pp. L535-L537 ◽

Cited By ~ 2

Author(s):

Jung-Il Lee ◽

Myung-Bok Lee ◽

Sang Young Lee ◽

Kwang Nham Kang ◽

Kyung Sik Yoon

Keyword(s):

Simple Model ◽

Metal Oxide ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel ◽

Voltage Dependent ◽

Lightly Doped Drain

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Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted

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Scalable Submicron Channel Fabrication by Suspended Nanofiber Lithography for Short‐Channel Field‐Effect Transistors

Advanced Functional Materials ◽

10.1002/adfm.202109254 ◽

2021 ◽

pp. 2109254

Author(s):

Hai‐Yang Liu ◽

Jun Yin ◽

Xiangxiang Gao ◽

Sanchuan Zhao ◽

Gang Bian ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Short Channel

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Suppression of short channel effects in 5.1 nm WTe2 in-plane Schottky barrier field-effect transistors by Mo-doping

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106327 ◽

2021 ◽

pp. 106327

Author(s):

Liuming Dou ◽

Zhiqiang Fan ◽

Peng Xiao

Keyword(s):

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistors ◽

Short Channel Effects ◽

Short Channel ◽

Mo Doping ◽

Channel Effects

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Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors

Advances in Computer and Electrical Engineering - Innovative Applications of Nanowires for Circuit Design ◽

10.4018/978-1-7998-6467-7.ch003 ◽

2021 ◽

pp. 54-70

Author(s):

Raj Kumar ◽

Shashi Bala ◽

Arvind Kumar

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistors ◽

Ballistic Transport ◽

High Mobility ◽

Short Channel Effects ◽

Short Channel ◽

Comparative Performance ◽

Channel Effects ◽

And Performance

To have enhanced drive current and diminish short channel effects, planer MOS transistors have migrated from single-gate devices to three-dimensional multi-gate MOSFETs. The gate-all-around nanowire field-effect transistor (GAA NWFET) and nanotube or double gate-all-around field-effect transistors (DGGA-NTFET) have been proposed to deal with short channel effects and performance relates issues. Nanowire and nanotube-based field-effect transistors can be considered as leading candidates for nanoscale devices due to their superior electrostatic controllability, and ballistic transport properties. In this work, the performance of GAA NWFETs and DGAA-NT FETs will be analyzed and compared. III-V semiconductor materials as a channel will also be employed due to their high mobility over silicon. Performance analysis of junctionless nanowire and nanotube FETs will also be compared and presented.

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