Influence of channel layer and passivation layer on the stability of amorphous InGaZnO thin film transistors

2013 ◽  
Vol 53 (12) ◽  
pp. 1879-1885 ◽  
Author(s):  
Runze Zhan ◽  
Chengyuan Dong ◽  
Po-Tsun Liu ◽  
Han-Ping D. Shieh
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Passivation Layer ◽  
Channel Layer ◽  
The Stability ◽  
Amorphous Ingazno

Organic materials as a passivation layer for metal oxide semiconductors

2020 ◽  
Vol 8 (43) ◽  
pp. 14983-14995 ◽  
Author(s):  
Dongil Ho ◽  
Hyewon Jeong ◽  
Sunwoo Choi ◽  
Choongik Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Organic Materials ◽  
Metal Oxide Semiconductors ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Oxide Semiconductors ◽  
The Stability ◽  
Stability Enhancement

This highlight reviews the recent studies on organic passivation for the stability enhancement of oxide thin-film transistors.

Effect of reactive sputtered SiOx passivation layer on the stability of InGaZnO thin film transistors

Vacuum ◽  
2012 ◽  
Vol 86 (12) ◽  
pp. 1840-1843 ◽  
Author(s):  
Jun Li ◽  
Fan Zhou ◽  
Hua-Ping Lin ◽  
Wen-Qing Zhu ◽  
Jian-Hua Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Passivation Layer ◽  
The Stability

Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors

2012 ◽  
Vol 29 (6) ◽  
pp. 067302 ◽  
Author(s):  
Xiao-Ming Huang ◽  
Chen-Fei Wu ◽  
Hai Lu ◽  
Qing-Yu Xu ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Trap Density ◽  
The Stability ◽  
Amorphous Ingazno

Stability of Organic Thin Film Transistors

2004 ◽  
Vol 814 ◽  
Author(s):  
Jeong In Han ◽  
Yong Hoon Kim ◽  
Sung Kyu Park ◽  
Dae Gyu Moon ◽  
Won Keun Kim
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Passivation Layer ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Saturation Field ◽  
The Stability

AbstractThe stability of organic thin film transistors (OTFTs) has become one of the most vital issues in this area of research. In this report, we investigated the stability of rubber stamp printed OTFTs. The electrical properties such as saturation field effect mobility, threshold voltage and on/off current ratio change significantly in ambient air condition. In order to analyze the degradation of the device, transistors were measured in vacuum, dry N2 and air environment as a function of time. In vacuum and dry N2 atmosphere, saturation field effect mobility and threshold voltage variations are relatively small compared to those measured in ambient condition.To realize an air stable device, we applied a passivation layer which protects the device from oxygen or water molecules which is believed to be the source of the degradation. With the passivation layer, the threshold voltage shift was reduced suggesting that a proper passivation layer is a prerequisite in organic-based electronics.

Sign in / Sign up

Export Citation Format

Share Document