Simultaneously Defined Semiconducting Channel Layer Using Electrohydrodynamic Jet Printing of a Passivation Layer for Oxide Thin-Film Transistors

2020 ◽  
Vol 12 (35) ◽  
pp. 39705-39712
Author(s):  
Seonghwan Hong ◽  
Jae Won Na ◽  
I. Sak Lee ◽  
Hyung Tae Kim ◽  
Byung Ha Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Channel Layer ◽  
Electrohydrodynamic Jet Printing ◽  
Jet Printing

scholarly journals High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric

Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 852 ◽  
Author(s):  
Seungbeom Choi ◽  
Kyung-Tae Kim ◽  
Sung Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Linear Type ◽  
Channel Layer ◽  
Indium Gallium

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

scholarly journals Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure

Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3639 ◽  
Author(s):  
Cheng-Jyun Wang ◽  
Hsin-Chiang You ◽  
Kuan Lin ◽  
Jen-Hung Ou ◽  
Keng-Hsien Chao ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Visible Light ◽  
Surface Plasmon ◽  
Thin Film Transistors ◽  
Lower Surface ◽  
Electrical Signal ◽  
Oxide Thin Film ◽  
Localized Surface Plasmon ◽  
Channel Layer

Highly transparent zinc oxide (ZnO)-based thin-film transistors (TFTs) with gold nanoparticles (AuNPs) capable of detecting visible light were fabricated through spray pyrolysis on a fluorine-doped tin oxide substrate. The spray-deposited channel layer of ZnO had a thickness of approximately 15 nm, and the thickness exhibited a linear increase with an increasing number of sprays. Furthermore, the ZnO thin-film exhibited a markedly smoother channel layer with a significantly lower surface roughness of 1.84 nm when the substrate was 20 cm from the spray nozzle compared with when it was 10 cm away. Finally, a ZnO and Au-NP heterojunction nanohybrid structure using plasmonic energy detection as an electrical signal, constitutes an ideal combination for a visible-light photodetector. The ZnO-based TFTs convert localized surface plasmon energy into an electrical signal, thereby extending the wide band-gap of materials used for photodetectors to achieve visible-light wavelength detection. The photo-transistors demonstrate an elevated on-current with an increase of the AuNP density in the concentration of 1.26, 12.6, and 126 pM and reach values of 3.75, 5.18, and 9.79 × 10−7 A with applied gate and drain voltages. Moreover, the threshold voltage (Vth) also drifts to negative values as the AuNP density increases.

Organic materials as a passivation layer for metal oxide semiconductors

2020 ◽  
Vol 8 (43) ◽  
pp. 14983-14995 ◽  
Author(s):  
Dongil Ho ◽  
Hyewon Jeong ◽  
Sunwoo Choi ◽  
Choongik Kim
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Organic Materials ◽  
Metal Oxide Semiconductors ◽  
Passivation Layer ◽  
Oxide Thin Film ◽  
Oxide Semiconductors ◽  
The Stability ◽  
Stability Enhancement

This highlight reviews the recent studies on organic passivation for the stability enhancement of oxide thin-film transistors.

Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium–Indium–Zinc Oxide Thin Film Transistors

2011 ◽  
Vol 50 (2R) ◽  
pp. 024104 ◽  
Author(s):  
Sun-Jae Kim ◽  
Soo-Yeon Lee ◽  
Young-Wook Lee ◽  
Woo-Geun Lee ◽  
Kap-Soo Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Layer Thickness ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Channel Layer ◽  
Indium Zinc Oxide

Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors

2012 ◽  
Vol 100 (10) ◽  
pp. 102108 ◽  
Author(s):  
Sangkyu Lee ◽  
Jeonghyun Kim ◽  
Junghyun Choi ◽  
Hyunjung Park ◽  
Jaehwan Ha ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Semiconductor ◽  
Electrohydrodynamic Jet Printing ◽  
Jet Printing

Effects of Channel Layer Thickness on Characteristics of Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors

2017 ◽  
Vol 64 (5) ◽  
pp. 1997-2000 ◽  
Author(s):  
Dedong Han ◽  
Lingling Huang ◽  
Wen Yu ◽  
Yingying Cong ◽  
Junchen Dong ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Layer Thickness ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Channel Layer
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