scholarly journals Synthesis of Ti3AuC2, Ti3Au2C2 and Ti3IrC2 by noble metal substitution reaction in Ti3SiC2 for high-temperature-stable Ohmic contacts to SiC

2017 ◽  
Vol 16 (8) ◽  
pp. 814-818 ◽  
Author(s):  
Hossein Fashandi ◽  
Martin Dahlqvist ◽  
Jun Lu ◽  
Justinas Palisaitis ◽  
Sergei I. Simak ◽  
...  
Keyword(s):  
High Temperature ◽  
Noble Metal ◽  
Substitution Reaction ◽  
Ohmic Contacts ◽  
Metal Substitution

Characteristics and aging of SiC MOSFETs operated at very high temperatures

2014 ◽  
Vol 1693 ◽  
Author(s):  
Dean P. Hamilton ◽  
Michael R. Jennings ◽  
Craig A. Fisher ◽  
Yogesh K. Sharma ◽  
Stephen J. York ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
Threshold Voltage ◽  
Thermal Aging ◽  
Ohmic Contacts ◽  
Stress Tests ◽  
Temperature Capability ◽  
Temperature Constant ◽  
Voltage Management ◽  
Very High

ABSTRACTSilicon carbide power devices are purported to be capable of operating at very high temperatures. Current commercially available SiC MOSFETs from a number of manufacturers have been evaluated to understand and quantify the aging processes and temperature dependencies that occur when operated up to 350°C. High temperature constant positive bias stress tests demonstrated a two times increase in threshold voltage from the original value for some device types, which was maintained indefinitely but could be corrected with a long negative gate bias. The threshold voltages were found to decrease close to zero and the on-state resistances increased quite linearly to approximately five or six times their room temperature values. Long term thermal aging of the dies appears to demonstrate possible degradation of the ohmic contacts. This appears as a rectifying response in the I-V curves at low drain-source bias. The high temperature capability of the latest generations of these devices has been proven independently; provided that threshold voltage management is implemented, the devices are capable of being operated and are free from the effects of thermal aging for at least 70 hours cumulative at 300°C.

Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC

2019 ◽  
Vol 58 (11) ◽  
pp. 116501 ◽  
Author(s):  
Vuong Van Cuong ◽  
Seiji Ishikawa ◽  
Tomonori Maeda ◽  
Hiroshi Sezaki ◽  
Satoshi Yasuno ◽  
...  
Keyword(s):  
High Temperature ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Specific Contact

Stability of alloyed and nonalloyed ohmic contacts to n-type GaN at high temperature in air

2017 ◽  
Vol 56 (12) ◽  
pp. 126502
Author(s):  
Shirong Zhao ◽  
Jianyi Gao ◽  
Shuo Wang ◽  
Hongen Xie ◽  
Fernando A. Ponce ◽  
...  
Keyword(s):  
High Temperature ◽  
Ohmic Contacts

Trinuclear and Tetranuclear Platinum−Iridium Cluster Complexes:  A Remarkable Metal for Metal Substitution Reaction

1998 ◽  
Vol 17 (12) ◽  
pp. 2433-2439 ◽  
Author(s):  
Brian T. Sterenberg ◽  
Greg J. Spivak ◽  
Glenn P. A. Yap ◽  
Richard J. Puddephatt
Keyword(s):  
Substitution Reaction ◽  
Metal Substitution ◽  
Cluster Complexes

Structure of the Short-Lived Intermediate Formed during the Metal Substitution Reaction of the Mercury(II) Porphyrin Complex with Cobalt(II) Ion in Aqueous Solution Determined by the Stopped-Flow EXAFS Method

1998 ◽  
Vol 53 (4) ◽  
pp. 469-475 ◽  
Author(s):  
Kazuhiko Ozutsumi ◽  
Shintaro Ohnishia ◽  
Hitoshi Ohtaki ◽  
Masaaki Tabatab
Keyword(s):  
Bond Length ◽  
Local Structure ◽  
Substitution Reaction ◽  
Stopped Flow ◽  
Coordination Geometry ◽  
Metal Substitution ◽  
Octahedral Structure ◽  
Coordinate Structure ◽  
Bond Lengths ◽  
Additional Water

The local structure around the cobalt(II) ion in the reaction intermediate formed during the metal substitution reaction of the homodinuclear mercury(II) porphyrin (5,10,15,20-tetrakis(4- sulfonatophenyl)porphyrin; H2tpps4- ) complex with a cobalt(II) ion in an acetate buffer has been determined by the stopped-flow EXAFS method. The structure of the reactant and the product of the above reaction has also been determined by the same method. The coordination geometry around the cobalt(II) ion in the heterodinuclear intermediate, [Hg(tpps)Coll]2- , is six-coordinate octahedral with four additional water and/or acetate oxygen atoms. The Coll-N and Coll-O bond lengths in the intermediate are 212(2) and 221(1) pm, respectively. The product, [Coll(tpps)]4-, has a six-coordinate octahedral structure, the Coll-N and Coll-O bond lengths being 203(1) and 215(1) pm, respectively. The Coll-N bond length in the intermediate is ca. 9 pm longer than that in the product. The Coll-O bond length in the intermediate is also ca. 9 pm longer than that of 212(1) pm in the reactant, the cobalt(II) acetato complex, and ca. 6 pm longer than that in the product. The longer Coll-O bond in the intermediate as compared to those in the reactant and in the product appears to be responsible for the instability of the intermediate. The oxidized product, [Colll(tpps)]3-, has a six-coordinate structure with two additional Colll-O bonds. The Colll-N and Colll-O bond lengths are 189(1) and 197(2) pm, respectively, and are much shorter than those in [Coll(tpps)]4-.

Realization of improved metallization-Ti/Al/Ti/W/Au ohmic contacts to n-GaN for high temperature application

2005 ◽  
Vol 2 (7) ◽  
pp. 2536-2539 ◽  
Author(s):  
A. Motayed ◽  
A.V. Davydov ◽  
W. J. Boettinger ◽  
D. Josell ◽  
A.J. Shapiro ◽  
...  
Keyword(s):  
High Temperature ◽  
Ohmic Contacts ◽  
High Temperature Application ◽  
Temperature Application
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