High Temperature Reliability of Refractory Metal Ohmic Contacts to Diamond

1992 ◽  
Vol 139 (7) ◽  
pp. 2001-2004 ◽  
Author(s):  
M. Roser ◽  
C. A. Hewett ◽  
K. L. Moazed ◽  
J. R. Zeidler
Alloy Digest ◽  
2020 ◽  
Vol 69 (11) ◽  

Abstract Wieland Duro Tantalum is unalloyed tantalum that is produced from powder metallurgy consolidated ingots. It is a versatile refractory metal that is used in demanding applications requiring resistance to high temperature and corrosion. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on low and high temperature performance as well as machining and joining. Filing Code: Ta-14. Producer or source: Wieland Duro GmbH.


JOM ◽  
1999 ◽  
Vol 51 (4) ◽  
pp. 32-36 ◽  
Author(s):  
B. P. Bewlay ◽  
M. R. Jackson ◽  
P. R. Subramanian

2014 ◽  
Vol 1693 ◽  
Author(s):  
Dean P. Hamilton ◽  
Michael R. Jennings ◽  
Craig A. Fisher ◽  
Yogesh K. Sharma ◽  
Stephen J. York ◽  
...  

ABSTRACTSilicon carbide power devices are purported to be capable of operating at very high temperatures. Current commercially available SiC MOSFETs from a number of manufacturers have been evaluated to understand and quantify the aging processes and temperature dependencies that occur when operated up to 350°C. High temperature constant positive bias stress tests demonstrated a two times increase in threshold voltage from the original value for some device types, which was maintained indefinitely but could be corrected with a long negative gate bias. The threshold voltages were found to decrease close to zero and the on-state resistances increased quite linearly to approximately five or six times their room temperature values. Long term thermal aging of the dies appears to demonstrate possible degradation of the ohmic contacts. This appears as a rectifying response in the I-V curves at low drain-source bias. The high temperature capability of the latest generations of these devices has been proven independently; provided that threshold voltage management is implemented, the devices are capable of being operated and are free from the effects of thermal aging for at least 70 hours cumulative at 300°C.


2008 ◽  
Vol 1128 ◽  
Author(s):  
David M. Herman ◽  
Bernard P Bewlay ◽  
Laurent Cretegny ◽  
Richard DiDomizio ◽  
John Lewandowski

AbstractThe fracture and fatigue behavior of refractory metal silicide alloys/composites is significantly affected by the mechanical behavior of the refractory metal phase. This paper reviews some of the balance of properties obtained in the alloys/composites based on the Nb-Si system. Since some of the alloy/composite properties are dominated by the behavior of the refractory metal phase, the paper begins with a review of data on monolithic Nb and its alloys. This is followed by presentation of results obtained on Nb-Si alloys/composites and a comparison to behavior of some other high temperature systems.


Materials ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4099
Author(s):  
Georg Hasemann ◽  
Chad Harris ◽  
Manja Krüger ◽  
John H. Perepezko

Alloys in the V-Si-B system are a new and promising class of light-weight refractory metal materials for high temperature applications. Presently, the main attention is focused on three-phase alloy compositions that consist of a vanadium solid solution phase and the two intermetallic phases V3Si and V5SiB2. Similar to other refractory metal alloys, a major drawback is the poor oxidation resistance. In this study, initial pack-cementation experiments were performed on commercially available pure vanadium and a three-phase alloy V-9Si-5B to achieve an oxidation protection for this new type of high temperature material. This advance in oxidation resistance now enables the attractive mechanical properties of V-Si-B alloys to be used for high temperature structural applications.


2019 ◽  
Vol 58 (11) ◽  
pp. 116501 ◽  
Author(s):  
Vuong Van Cuong ◽  
Seiji Ishikawa ◽  
Tomonori Maeda ◽  
Hiroshi Sezaki ◽  
Satoshi Yasuno ◽  
...  

2017 ◽  
Vol 16 (8) ◽  
pp. 814-818 ◽  
Author(s):  
Hossein Fashandi ◽  
Martin Dahlqvist ◽  
Jun Lu ◽  
Justinas Palisaitis ◽  
Sergei I. Simak ◽  
...  

1994 ◽  
Vol 339 ◽  
Author(s):  
S. D. Wolter ◽  
B. R. Stoner ◽  
P. C. Yang ◽  
W. Lui ◽  
J. T. Glass

ABSTRACTDiamond nucleation has been investigated on a variety of potential heteroepitaxial substrate materials. Previous work in this laboratory has demonstrated heteroepitaxial nucleation on both Si and SiC substrates via bias-enhanced nucleation (BEN). In this study the effects of BEN of diamond on refractory metal substrates is investigated in detail. Initial data suggest a strong correlation between the carbide forming nature of the substrate material and the rate of nucleation during biasing. Our second avenue of research involves low pressure diamond growth on nickel. This material is a promising material due to its close lattice match and recent evidence of epitaxy reported by other researchers. To form heteroepitaxial diamond on nickel a high temperature pretreatment routine has been established and is the basis for this area of research. The relative importance of hydrogen absorption during this routine is explored and correlated to the formation and degree of diamond epitaxy.


2017 ◽  
Vol 56 (12) ◽  
pp. 126502
Author(s):  
Shirong Zhao ◽  
Jianyi Gao ◽  
Shuo Wang ◽  
Hongen Xie ◽  
Fernando A. Ponce ◽  
...  

2005 ◽  
Vol 2 (7) ◽  
pp. 2536-2539 ◽  
Author(s):  
A. Motayed ◽  
A.V. Davydov ◽  
W. J. Boettinger ◽  
D. Josell ◽  
A.J. Shapiro ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document