Improved thermal management of low voltage power devices with optimized bond wire positions

2011 ◽  
Vol 51 (9-11) ◽  
pp. 1913-1918 ◽  
Author(s):  
Helmut Köck ◽  
Christian Djelassi ◽  
Stefano de Filippis ◽  
Robert Illing ◽  
Michael Nelhiebel ◽  
...  
Keyword(s):  
Thermal Management ◽  
Low Voltage ◽  
Power Devices ◽  
Bond Wire

scholarly journals Gallium-Nitride Semiconductor Technology and Its Practical Design Challenges in Power Electronics Applications: An Overview

Energies ◽  
2019 ◽  
Vol 12 (14) ◽  
pp. 2663 ◽  
Author(s):  
Mauricio Dalla Vecchia ◽  
Simon Ravyts ◽  
Giel Van den Broeck ◽  
Johan Driesen
Keyword(s):  
Gallium Nitride ◽  
Power Electronics ◽  
Thermal Management ◽  
Low Voltage ◽  
Experimental Testing ◽  
Design Procedure ◽  
Switching Frequency ◽  
Passive Component ◽  
Advantages And Disadvantages ◽  
Design Challenges

This paper will revise, experimentally investigate, and discuss the main application challenges related to gallium nitride power semiconductors in switch-mode power converters. Gallium Nitride (GaN) devices are inherently gaining space in the market. Due to its high switching speed and operational switching frequency, challenges related to the circuit design procedure, passive component selection, thermal management, and experimental testing are currently faced by power electronics engineers. Therefore, the focus of this paper is on low-voltage (<650 V) devices that are used to assemble DC-DC and/or DC-AC converters to, for instance, interconnect PV generation systems in the DC and/or AC grids. The current subjects will be discussed herein: GaN device structure, the advantages and disadvantages of each lateral gallium nitride technology available, design challenges related to electrical layout and thermal management, overvoltages and its implications in the driver signal, and finally, a comprehensive comparison between GaN and Si technology considering the main parameters to increase the converters efficiency.

Optimization Study of a Silicon-Carbide Micro-Capillary Pumped Loop

2003 ◽  
Author(s):  
Laura J. Meyer ◽  
Leslie M. Phinney
Keyword(s):  
Thermal Management ◽  
High Power ◽  
Electronic Devices ◽  
Maximum Size ◽  
Power Electronic ◽  
Power Devices ◽  
Pressure Balance ◽  
Capillary Pumped Loop ◽  
Two Phase ◽  
Bandgap Semiconductors

Wide bandgap semiconductors such as SiC and GaN are materials that are advantageous for high power electronic devices. High power devices generate large amounts of energy that must be removed, and traditional cooling methods are insufficient for maintaining the desired operating temperatures. Thus, thermal management methods for high power electronic devices need to be developed. A SiC micro-capillary pumped loop thermal management system is being evaluated to cool SiC high power devices. Mathematical models incorporating two-phase flow and capillary wicking have been developed to analyze capillary pumped loops or loop heat pipes. This investigation uses a model based on the methodology of Dickey and Peterson (1994). The model takes an energy balance on the condenser and evaporator regions, as well as a pressure balance across the meniscus. A parametric study has been performed on the micro-CPL to determine the best design for a p-i-n diode that is less than 1 cm square and which produces a heat flux at the junction of over 300 W/cm2. The micro-CPL will be limited to a maximum size of 6.5 cm2. The liquid and vapor line lengths, number of grooves, and groove dimensions are varied to determine optimal values. The results and trends of the optimization calculations are discussed.

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