11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)
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Experimental demonstration of 600 V MCCT

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) ◽

10.1109/ispsd.1999.764130 ◽

2003 ◽

Author(s):

T. Iwaana ◽

N. Iwamuro ◽

Y. Harada ◽

Y. Seki

Keyword(s):

Experimental Demonstration

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Forward drop-leakage current tradeoff analysis of a junction barrier Schottky (JBS) rectifier

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) ◽

10.1109/ispsd.1999.764114 ◽

2003 ◽

Cited By ~ 3

Author(s):

Z. Hossain ◽

D. Cartmell ◽

G. Dashney

Keyword(s):

Leakage Current ◽

Tradeoff Analysis

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Advanced high current, high reliable IGBT module with improved multi-chip structure

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) ◽

10.1109/ispsd.1999.764074 ◽

2003 ◽

Cited By ~ 3

Author(s):

R. Saito ◽

Y. Koike ◽

A. Tanaka ◽

T. Kushima ◽

H. Shimizu ◽

...

Keyword(s):

High Current ◽

Igbt Module

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Electrical performance of triple implanted vertical silicon carbide MOSFETs with low on-resistance

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) ◽

10.1109/ispsd.1999.764071 ◽

2003 ◽

Cited By ~ 4

Author(s):

D. Peters ◽

P. Friedrichs ◽

R. Schorner ◽

H. Mitlehner ◽

B. Weis ◽

...

Keyword(s):

Silicon Carbide ◽

Electrical Performance

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High voltage Ni/4H-SiC Schottky rectifiers

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) ◽

10.1109/ispsd.1999.764087 ◽

2003 ◽

Cited By ~ 2

Author(s):

R.K. Chilukuri ◽

B.J. Baliga

Keyword(s):

High Voltage ◽

Schottky Rectifiers

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Lateral dual channel emitter switched thyristor employing segmented p-base

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) ◽

10.1109/ispsd.1999.764100 ◽

2003 ◽

Author(s):

D.-S. Byeon ◽

J.-K. Oh ◽

M.-K. Han ◽

Y.-I. Choi

Keyword(s):

Dual Channel

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0.35 μm, 43 μΩcm/sup 2/, 6 mΩ power MOSFET to power future microprocessor

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) ◽

10.1109/ispsd.1999.764058 ◽

2003 ◽

Author(s):

N.X. Sun ◽

A.Q. Huang ◽

F.C. Lee

Keyword(s):

Power Mosfet

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Explosion tests on IGBT high voltage modules

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) ◽

10.1109/ispsd.1999.764079 ◽

2003 ◽

Cited By ~ 3

Author(s):

S. Gekenidis ◽

E. Ramezani ◽

H. Zeller

Keyword(s):

High Voltage

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COOLMOS/sup TM/-a new milestone in high voltage power MOS

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) ◽

10.1109/ispsd.1999.764028 ◽

2003 ◽

Cited By ~ 113

Author(s):

L. Lorenz ◽

G. Deboy ◽

A. Knapp ◽

M. Marz

Keyword(s):

High Voltage

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High voltage high frequency silicon bipolar transistors

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) ◽

10.1109/ispsd.1999.764120 ◽

2003 ◽

Author(s):

D. Gradinaru ◽

W.T. Ng ◽

C.A.T. Salama

Keyword(s):

High Voltage ◽

High Frequency ◽

Bipolar Transistors

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11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Experimental demonstration of 600 V MCCT

Forward drop-leakage current tradeoff analysis of a junction barrier Schottky (JBS) rectifier

Advanced high current, high reliable IGBT module with improved multi-chip structure

Electrical performance of triple implanted vertical silicon carbide MOSFETs with low on-resistance

High voltage Ni/4H-SiC Schottky rectifiers

Lateral dual channel emitter switched thyristor employing segmented p-base

0.35 μm, 43 μΩcm/sup 2/, 6 mΩ power MOSFET to power future microprocessor

Explosion tests on IGBT high voltage modules

COOLMOS/sup TM/-a new milestone in high voltage power MOS

High voltage high frequency silicon bipolar transistors

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312)
Latest Publications