Significantly improving sub-90nm CMOSFET performances with notch-gate enhanced high tensile-stress contact etch stop layer

2008 ◽  
Vol 48 (11-12) ◽  
pp. 1791-1794 ◽  
Author(s):  
Chia-Wei Hsu ◽  
Yean-Kuen Fang ◽  
Wen-Kuan Yeh ◽  
Chien-Ting Lin
Keyword(s):  
Tensile Stress ◽  
Etch Stop ◽  
Etch Stop Layer

scholarly journals A Semi-Floating Gate Memory with Tensile Stress for Enhanced Performance

Electronics ◽  
2019 ◽  
Vol 8 (4) ◽  
pp. 414
Author(s):  
Yuan ◽  
Jiang ◽  
Sun ◽  
Chen ◽  
Zhu ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Random Access ◽  
Drain Current ◽  
Floating Gate ◽  
Retention Performance ◽  
Operation Speed ◽  
Floating Gate Transistor ◽  
Floating Gate Memory ◽  
Etch Stop ◽  
Etch Stop Layer

With the continuous scaling down of devices, traditional one-transistor one-capacitor dynamic random access memory (1T-1C DRAM) has encountered great challenges originated from the large-volume capacitor and high leakage current. A semi-floating gate transistor has been proposed as a capacitor-less memory with ultrafast speed and silicon-compatible technology. In this work, a U-shaped semi-floating gate memory with strain technology has been demonstrated through TCAD simulation. Ultra-high operation speed on a timescale of 5 ns at low operation voltages (≤ 2.0 V) has been obtained. And the tensile stress induced in its channel region by using contact etch stop layer (Si3N4 capper layer) was found to significantly improve the drain current by 12.07%. Furthermore, this device demonstrated a favorable retention performance with a retention time over 1 s, and its immunity to disturbance from bit-line has also been investigated that could maintain data under the continuous worst writing disturbance operation over 10 ms.

MOCVD Growth of InAlAsSb Layer for High-Breakdown Voltage HEMT Applications

2003 ◽  
Vol 799 ◽  
Author(s):  
Haruki Yokoyama ◽  
Hiroki Sugiyama ◽  
Yasuhiro Oda ◽  
Michio Sato ◽  
Noriyuki Watanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Chemical Vapor ◽  
Composition Analysis ◽  
Group V ◽  
Group Iii ◽  
Mocvd Growth ◽  
Order Of Magnitude ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Inp Substrates

ABSTRACTThis paper studies the decomposition characteristic of group-III sources during InAlAsSb growth on InP substrates by metalorganic chemical vapor deposition (MOCVD) using trimethylindium (TMI), trimethylaluminum (TMA), trimethylantimony (TMSb) and arsine (AsH3). A composition analysis of InAlAsSb layers shows that the group-III compositions in the InAlAsSb layer change remarkably when the flow rate of the group-V source is varied. To clarify the reason for this phenomenon, the growth rates of InAsSb and AlAsSb component are examined. Their changes indicate that TMSb suppresses the decomposition of TMA while AsH3 enhances it. Moreover, the HEMT structure with InP/InAlAsSb Schottky barrier layer, whose InP layer acts as a recess-etch-stop layer, is fabricated for the first time. The I-V characteristics of a fabricated Schottky barrier diode indicate that the reverse leakage current of InP/InAlAsSb is about one order of magnitude smaller than that of commonly used InP/InAlAs.

scholarly journals Maskless lithography using silicon oxide etch-stop layer induced by megahertz repetition femtosecond laser pulses

2011 ◽  
Vol 19 (11) ◽  
pp. 10834 ◽  
Author(s):  
Amirkianoosh Kiani ◽  
Krishnan Venkatakrishnan ◽  
Bo Tan ◽  
Venkat Venkataramanan
Keyword(s):  
Femtosecond Laser ◽  
Silicon Oxide ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Maskless Lithography ◽  
Etch Stop ◽  
Etch Stop Layer

Optimisation of a Pre-Metal-Dielectric with a contact etch stop layer for 0.18um and 0.13um technologies

2000 ◽  
Author(s):  
B. De Jaeger ◽  
G. Van den bosch ◽  
M. Van Hove ◽  
I. Debusschere ◽  
M. Schaekers ◽  
...  
Keyword(s):  
Etch Stop ◽  
Etch Stop Layer

Impact of TaN as Wet Etch Stop Layer on Device Characteristics for Dual-Metal HKMG Last Integration CMOSFETs

2013 ◽  
Vol 34 (12) ◽  
pp. 1488-1490 ◽  
Author(s):  
Zhaoyun Tang ◽  
Jing Xu ◽  
Hong Yang ◽  
Hushan Cui ◽  
Bo Tang ◽  
...  
Keyword(s):  
Etch Stop ◽  
Etch Stop Layer ◽  
Dual Metal ◽  
Wet Etch

GaSb-Based Mid-Infrared Single Lateral Mode Lasers Fabricated by Selective Wet Etching Technique with an Etch Stop Layer

2012 ◽  
Vol 41 (5) ◽  
pp. 899-904 ◽  
Author(s):  
Seungyong Jung ◽  
Gela Kipshidze ◽  
Rui Liang ◽  
Sergey Suchalkin ◽  
Leon Shterengas ◽  
...  
Keyword(s):  
Wet Etching ◽  
Etching Technique ◽  
Mid Infrared ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Lateral Mode

Performance and Interface Characterization for Contact Etch Stop Layer–Strained nMOSFET with HfO[sub 2] Gate Dielectrics under Pulsed-IV Measurement

2008 ◽  
Vol 11 (8) ◽  
pp. H230 ◽  
Author(s):  
Woei-Cherng Wu ◽  
Tien-Sheng Chao ◽  
Te-Hsin Chiu ◽  
Jer-Chyi Wang ◽  
Chao-Sung Lai ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Interface Characterization ◽  
Etch Stop ◽  
Etch Stop Layer

Selective etching of GaAs grown over AlAs etch-stop layer in buffered citric acid/H 2 O 2 solution

2017 ◽  
Vol 63 ◽  
pp. 52-57 ◽  
Author(s):  
A. Kuźmicz ◽  
K. Chmielewski ◽  
O. Serebrennikova ◽  
J. Muszalski
Keyword(s):  
Citric Acid ◽  
Selective Etching ◽  
Etch Stop ◽  
Etch Stop Layer

A Novel Batch Production Technique of Metal Embedded Thin Film Microsensors for Applications in Manufacturing

2005 ◽  
Author(s):  
Arindom Datta ◽  
Hongseok Choi ◽  
Xiaochun Li
Keyword(s):  
Thin Film ◽  
Silicon Wafer ◽  
Strain Gauge ◽  
Metal Layer ◽  
Nitride Layer ◽  
Nickel Layer ◽  
Layer Deposition ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Multilayer Dielectric

Effective monitoring and diagnosis of manufacturing processes is of importance in reducing operation costs, improving product quality, and reducing process time. If conditions of manufacturing tools are continuously monitored, problems can be detected and solved during the processing cycle, resulting in less tool damage, higher productivity, and less energy consumption. In-situ monitoring of the basic operating conditions (e.g. temperature and strain) of certain mechanical tools and components can be accomplished by placing microsensors in some critical locations. Thin film microsensors (e.g. thermocouple, strain gauge) have drawn considerable attention recently due to their small size, fast response and lower cost [1]. Since most tools and components in manufacturing process are metallic, metal embedded thin film microsensors are very attractive. A new batch fabrication technique based on electroplating and wet chemical etching of silicon has been developed. Microsensors were directly fabricated on an etch stop layer grown on silicon wafer. A multilayer dielectric is deposited to insulate sensor areas followed by seed layer deposition, and electroplating a thicker metal layer. After silicon wafer is etched out, the microsensors are transferred from silicon to electroplated metal substrate directly. After plasma etching of the etch stop layer, these sensors can be further embedded into another electroplated metal layer from the top after insulation by dielectric multilayer. Metal embedded strain gauge array was fabricated successfully. Thin film Ni/Cr strain gauges were fabricated on LPCVD silicon nitride layer grown on a 3-inch silicon wafer. Each strain gauge unit was insulated by Al2O3/PECVD SixNy/Al2O3 multilayer before seed layer deposition and electroplating a thick nickel layer on whole wafer. Si wafer was then etched out in KOH solution to transfer all microsensors to electroplated nickel layer. LPCVD nitride layer covering the sensors was dry etched and same multilayer dielectric was selectively deposited over the sensors except pad areas. These microsensors were finally embedded into another electroplated nickel layer leaving the pads uncovered for external connection. This process offers a novel way to realize batch production of metal embedded microsensors for use in hostile manufacturing environment.

Low-threshold grating-coupled surface-emitting lasers with etch-stop layer for precise grating positioning

1993 ◽  
Vol 5 (10) ◽  
pp. 1149-1152 ◽  
Author(s):  
T. Kjellberg ◽  
M. Hagberg ◽  
N. Eriksson ◽  
A.G. Larsson
Keyword(s):  
Surface Emitting Lasers ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Low Threshold ◽  
Emitting Lasers
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