Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling

2008 ◽  
Vol 48 (8-9) ◽  
pp. 1339-1342 ◽  
Author(s):  
Roland Biberger ◽  
Guenther Benstetter ◽  
Thomas Schweinboeck ◽  
Peter Breitschopf ◽  
Holger Goebel
Keyword(s):  
Contact Mode ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling ◽  
Intermittent Contact

scholarly journals Wide range local resistance imaging on fragile materials by conducting probe atomic force microscopy in intermittent contact mode

2016 ◽  
Vol 108 (24) ◽  
pp. 243101 ◽  
Author(s):  
Aymeric Vecchiola ◽  
Pascal Chrétien ◽  
Sophie Delprat ◽  
Karim Bouzehouane ◽  
Olivier Schneegans ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Local Resistance ◽  
Contact Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wide Range ◽  
Intermittent Contact

Immobilization method of yeast cells for intermittent contact mode imaging using the atomic force microscope

2010 ◽  
Vol 110 (3) ◽  
pp. 254-258 ◽  
Author(s):  
Tathagata De ◽  
Antony M. Chettoor ◽  
Pranav Agarwal ◽  
Murti V. Salapaka ◽  
Saju Nettikadan
Keyword(s):  
Atomic Force Microscope ◽  
Yeast Cells ◽  
Contact Mode ◽  
Atomic Force ◽  
Intermittent Contact ◽  
Immobilization Method

Evaluation of Intermittent Contact Mode AFM Probes by HREM and Using Atomically Sharp CeO2Ridges as Tip Characterizer

Langmuir ◽  
2000 ◽  
Vol 16 (15) ◽  
pp. 6267-6277 ◽  
Author(s):  
Björn Skårman ◽  
L. Reine Wallenberg ◽  
Sissel N. Jacobsen ◽  
Ulf Helmersson ◽  
Claes Thelander
Keyword(s):  
Contact Mode ◽  
Intermittent Contact

scholarly journals Current measurements in the intermittent-contact mode of atomic force microscopy using the Fourier method: a feasibility analysis

2020 ◽  
Vol 11 ◽  
pp. 453-465 ◽  
Author(s):  
Berkin Uluutku ◽  
Santiago D Solares
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Potential ◽  
Current Response ◽  
Contact Mode ◽  
Higher Harmonics ◽  
Conductive Afm ◽  
Force Microscopy ◽  
Atomic Force ◽  
Static Contact ◽  
Intermittent Contact

Atomic force microscopy (AFM) is an important tool for measuring a variety of nanoscale surface properties, such as topography, viscoelasticity, electrical potential and conductivity. Some of these properties are measured using contact methods (static contact or intermittent contact), while others are measured using noncontact methods. Some properties can be measured using different approaches. Conductivity, in particular, is mapped using the contact-mode method. However, this modality can be destructive to delicate samples, since it involves continuously dragging the cantilever tip on the surface during the raster scan, while a constant tip–sample force is applied. In this paper we discuss a possible approach to develop an intermittent-contact conductive AFM mode based on Fourier analysis, whereby the measured current response consists of higher harmonics of the cantilever oscillation frequency. Such an approach may enable the characterization of soft samples with less damage than contact-mode imaging. To explore its feasibility, we derive the analytical form of the tip–sample current that would be obtained for attractive (noncontact) and repulsive (intermittent-contact) dynamic AFM characterization, and compare it with results obtained from numerical simulations. Although significant instrumentation challenges are anticipated, the modelling results are promising and suggest that Fourier-based higher-harmonics current measurement may enable the development of a reliable intermittent-contact conductive AFM method.

Guidelines for Two-Dimensional Dopant Profiling Using Scanning Capacitance Microscopy

2000 ◽  
Author(s):  
Axel Born ◽  
R. Wiesendanger
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Edge Effects ◽  
Two Dimensional ◽  
Stray Capacitance ◽  
Scanning Capacitance Microscopy ◽  
Dopant Profiling ◽  
3D Geometry ◽  
Cv Measurements ◽  
Preparation Techniques

Abstract This paper provides guidance and insights on the use of scanning capacitance microscopy (SCM) in semiconductor failure analysis. It explains why SCM systems are constrained by rigid performance tradeoffs and how CV measurements are affected by large stray capacitance and as well as edge effects associated with the 3D geometry of the sample and probe. It also explains how samples should be prepared and how proper sample preparation techniques combined with optimally selected voltages make it possible to accurately determine doping concentrations, even in p-n junctions.

Intermittent contact scanning capacitance microscopy-An improved method for 2D doping profiling

2005 ◽  
Vol 45 (9-11) ◽  
pp. 1568-1571 ◽  
Author(s):  
Peter Breitschopf ◽  
Günther Benstetter ◽  
Bernhard Knoll ◽  
Werner Frammelsberger
Keyword(s):  
Improved Method ◽  
Scanning Capacitance Microscopy ◽  
Intermittent Contact
Sign in / Sign up

Export Citation Format

Share Document