Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance

2005 ◽  
Vol 45 (5-6) ◽  
pp. 794-797 ◽  
Author(s):  
G.S. Lujan ◽  
W. Magnus ◽  
L-Å Ragnarsson ◽  
S. Kubicek ◽  
S. De Gendt ◽  
...  
Keyword(s):  
Coulomb Scattering ◽  
Device Performance ◽  
Mobility Degradation ◽  
Mos Device

Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences

2019 ◽  
Vol 66 (4) ◽  
pp. 1669-1674 ◽  
Author(s):  
Lixing Zhou ◽  
Xiaolei Wang ◽  
Kai Han ◽  
Xueli Ma ◽  
Yanrong Wang ◽  
...  
Keyword(s):  
Experimental Investigation ◽  
Coulomb Scattering ◽  
Mobility Degradation

A semi-empirical model for electron mobility at the SiC/SiO2 interface

2002 ◽  
Vol 742 ◽  
Author(s):  
Nelson S. Saks
Keyword(s):  
Surface Roughness ◽  
Empirical Model ◽  
Gate Voltage ◽  
Mobility Model ◽  
Coulomb Scattering ◽  
Mos Devices ◽  
Surface Roughness Scattering ◽  
Hall Effect Measurements ◽  
Semi Empirical ◽  
Mos Device

ABSTRACTThe mobility of electrons in inversion layers at SiC/SiO2 interfaces μinv has been characterized in 4H- and 6H-SiC using Hall effect measurements. In order to understand the cause of the low mobilities typically observed in SiC MOS devices, a semi-empirical mobility model has been developed based on a previous model for silicon inversion layers. Using this model, two scattering mechanisms, surface phonon and Coulomb scattering from high densities of electrons trapped at the SiC/SiO2 interface, are found to account reasonably well for the behavior of the mobility. The model employs a changing density of trapped electrons as a function of gate voltage to accurately model Coulomb scattering. Surprisingly, evidence of surface roughness scattering is not observed in any SiC MOS device.

scholarly journals Sub-Threshold Slope and ON/OFF Current variation in Nano-Scale MOSFETs

2019 ◽  
Author(s):  
Raja N Mir
Keyword(s):  
Three Dimensional ◽  
Device Performance ◽  
Gate Length ◽  
Subthreshold Slope ◽  
Current Ratio ◽  
Nano Scale ◽  
Current Variation ◽  
Mos Device ◽  
Three Dimensional Simulations

The Multi Gate transistors (MGT) have been used to improve the transistor device performance at the nanometer scales. MGTs alleviate many problems in the planar devices due to tighter control of the gate on the channel. In this paper the change in the Fin Architecture and Gate Length of the MOS device, is correlated with the Subthreshold Slope (SS) and ON/OFF current ratio. The study is done by conducting experiments and three-dimensional simulations.

Oxygen effects on barium strontium titanate morphology and MOS device performance

2013 ◽  
Vol 92 ◽  
pp. 389-392 ◽  
Author(s):  
Ibrahim Abdel-Motaleb ◽  
Bhavya Akula ◽  
Kevin Leedy ◽  
Rebecca Cortez
Keyword(s):  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Device Performance ◽  
Oxygen Effects ◽  
Barium Strontium ◽  
Mos Device
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