Material Defect Factors Affecting MOS Device Performance

2009 ◽  
pp. 332-332-30 ◽  
Author(s):  
JH Matlock
2019 ◽  
Author(s):  
Raja N Mir

The Multi Gate transistors (MGT) have been used to improve the transistor device performance at the nanometer scales. MGTs alleviate many problems in the planar devices due to tighter control of the gate on the channel. In this paper the change in the Fin Architecture and Gate Length of the MOS device, is correlated with the Subthreshold Slope (SS) and ON/OFF current ratio. The study is done by conducting experiments and three-dimensional simulations.


2015 ◽  
Vol 2015 ◽  
pp. 1-11 ◽  
Author(s):  
Bo Zhang ◽  
Wenxu Xie ◽  
Yong Xiang

This paper gives an overview of the development and prospect of nanotechnologies utilized in the solar cell applications. Even though it is not clearly pointed out, nanostructures indeed have been used in the fabrication of conventional solar cells for a long time. However, in those circumstances, only very limited benefits of nanostructures have been used to improve cell performance. During the last decade, the development of the photovoltaic device theory and nanofabrication technology enables studies of more complex nanostructured solar cells with higher conversion efficiency and lower production cost. The fundamental principles and important features of these advanced solar cell designs are systematically reviewed and summarized in this paper, with a focus on the function and role of nanostructures and the key factors affecting device performance. Among various nanostructures, special attention is given to those relying on quantum effect.


2009 ◽  
Vol 1165 ◽  
Author(s):  
Ramesh Dhere ◽  
Joel Duenow ◽  
Anna Duda ◽  
Stephen Glynn ◽  
Jian Li ◽  
...  

AbstractSeveral wet-processing steps are used in fabricating high-efficiency CdTe/CdS solar cells. These steps can hinder in-line processing; thus, developing an all-dry processing option is attractive for a manufacturing-friendly process. In this study, we systematically modified the baseline process used in our laboratory to replace CdS deposited by chemical-bath deposition (CBD) with sputter-deposited CdS and Cu-doped graphite paste back-contact with Cu-doped ZnTe deposited by radio-frequency sputtering. In addition to CdTe deposited by close-spaced sublimation, we also used conventionally evaporated CdTe. The results show that replacing only CBD CdS with oxygenated CdS deposited by sputtering produces devices with performance comparable to baseline devices if the front bilayer SnO2 is replaced by a Cd2SnO4/ZnSnO alloy. Replacing the graphite paste back-contact with sputter-deposited Cu-doped ZnTe resulted in device performance comparable to baseline devices. Incorporating both dry processing steps gave performance comparable to the devices with sputtered CdS with a SnO2 front contact. We used capacitance-voltage and minority-carrier lifetime measurements to analyze the factors affecting device performance and we present the results here.


2013 ◽  
Vol 92 ◽  
pp. 389-392 ◽  
Author(s):  
Ibrahim Abdel-Motaleb ◽  
Bhavya Akula ◽  
Kevin Leedy ◽  
Rebecca Cortez

Author(s):  
G G Klasner ◽  
V Yu Frolov ◽  
V F Kremyanskiy

The article presents a device to obtain soybean milk, Tofu soybean curd, a soy protein base for feed preparation for farm animals and poultry as a product of soybean grain processing. The device combines a number of technological operations, such as grinding the grain of legumes to obtain fine grinding, the extraction of soy protein into the emulsion and the separation of the protein emulsion into two homogeneous fractions: a liquid protein base (soy milk) and undissolved residue – Okara. The kinematics of the movement of soybean grain in a soaked form over the abrasive surface of a cone with curved grooves applied is considered, a final formula for the speed of movement of the grain is obtained. The volumetric and mass productivity of the grain chopper is determined theoretically and experimentally depending on the main factors affecting the process.


2015 ◽  
Vol 3 (17) ◽  
pp. 8943-8969 ◽  
Author(s):  
Teddy Salim ◽  
Shuangyong Sun ◽  
Yuichiro Abe ◽  
Anurag Krishna ◽  
Andrew C. Grimsdale ◽  
...  

This review provides an overview of factors affecting film morphology and how together with device architecture they impact perovskite cell performance.


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