Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences

2019 ◽  
Vol 66 (4) ◽  
pp. 1669-1674 ◽  
Author(s):  
Lixing Zhou ◽  
Xiaolei Wang ◽  
Kai Han ◽  
Xueli Ma ◽  
Yanrong Wang ◽  
...  
Keyword(s):  
Experimental Investigation ◽  
Coulomb Scattering ◽  
Mobility Degradation

Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs

2019 ◽  
Vol 34 (7) ◽  
pp. 075009
Author(s):  
Kai Han ◽  
Xiaolei Wang ◽  
Jinjuan Xiang ◽  
Lixing Zhou ◽  
Jiazhen Zhang ◽  
...  
Keyword(s):  
Hole Mobility ◽  
Coulomb Scattering ◽  
Mobility Degradation

Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance

2005 ◽  
Vol 45 (5-6) ◽  
pp. 794-797 ◽  
Author(s):  
G.S. Lujan ◽  
W. Magnus ◽  
L-Å Ragnarsson ◽  
S. Kubicek ◽  
S. De Gendt ◽  
...  
Keyword(s):  
Coulomb Scattering ◽  
Device Performance ◽  
Mobility Degradation ◽  
Mos Device

Effect of Coulomb Scattering on Stress-Induced Mobility Degradation in nMOSFETs with HfAlOX/SiO2 Dielectrics

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Author(s):  
W. Mizubayashi ◽  
N. Yasuda ◽  
H. Hisamatsu ◽  
H. Ota ◽  
K. Tominaga ◽  
...  
Keyword(s):  
Coulomb Scattering ◽  
Mobility Degradation
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