Modeling of electron mobility degradation by remote coulomb scattering in ultrathin oxide MOSFETs

D. Esseni; A. Abramo

doi:10.1109/ted.2003.814973

Modeling of electron mobility degradation by remote coulomb scattering in ultrathin oxide MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2003.814973 ◽

2003 ◽

Vol 50 (7) ◽

pp. 1665-1674 ◽

Cited By ~ 99

Author(s):

D. Esseni ◽

A. Abramo

Keyword(s):

Electron Mobility ◽

Coulomb Scattering ◽

Mobility Degradation ◽

Ultrathin Oxide

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Electron Mobility Degradation Due to Remote Coulomb Scattering in Ge MOSFET

Proceedings of the 2016 International Conference on Computer Science and Electronic Technology ◽

10.2991/cset-16.2016.72 ◽

2016 ◽

Author(s):

Haoyu Xu ◽

Jing Zhang ◽

Shuhua Wei ◽

Xiaolei Wang ◽

Wenwu Wang

Keyword(s):

Electron Mobility ◽

Coulomb Scattering ◽

Mobility Degradation

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An Improved Model for Electron Mobility Degradation by Remote Coulomb Scattering in Ultra-Thin Oxide MOSFETs

32nd European Solid-State Device Research Conference ◽

10.1109/essderc.2002.194900 ◽

2002 ◽

Cited By ~ 4

Author(s):

D. Esseni ◽

A. Abramo

Keyword(s):

Electron Mobility ◽

Coulomb Scattering ◽

Mobility Degradation ◽

Thin Oxide ◽

Improved Model

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Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3gate dielectrics

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/49/25/255104 ◽

2016 ◽

Vol 49 (25) ◽

pp. 255104 ◽

Cited By ~ 6

Author(s):

Xiaolei Wang ◽

Jinjuan Xiang ◽

Shengkai Wang ◽

Wenwu Wang ◽

Chao Zhao ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Mobility Degradation ◽

Dipole Scattering

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Electron Mobility Degradation and Interface Dipole Formation in Direct-Contact HfO$_{2}$/Si Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.4.101101 ◽

2011 ◽

Vol 4 (10) ◽

pp. 101101 ◽

Cited By ~ 5

Author(s):

Noriyuki Miyata ◽

Hiroyuki Ishii ◽

Taro Itatani ◽

Tetsuji Yasuda

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Direct Contact ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Dipole ◽

Mobility Degradation

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Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2900801 ◽

2019 ◽

Vol 66 (4) ◽

pp. 1669-1674 ◽

Cited By ~ 3

Author(s):

Lixing Zhou ◽

Xiaolei Wang ◽

Kai Han ◽

Xueli Ma ◽

Yanrong Wang ◽

...

Keyword(s):

Experimental Investigation ◽

Coulomb Scattering ◽

Mobility Degradation

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Effect of polysilicon depletion charge on electron mobility in ultrathin oxide MOSFETs

Semiconductor Science and Technology ◽

10.1088/0268-1242/18/11/304 ◽

2003 ◽

Vol 18 (11) ◽

pp. 927-937 ◽

Cited By ~ 7

Author(s):

F G miz ◽

A Godoy ◽

J B Rold n ◽

J E Carceller ◽

P Cartujo

Keyword(s):

Electron Mobility ◽

Ultrathin Oxide

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Suppression of Electron Mobility Degradation in (100)-Oriented Double-Gate Ultra-Thin Body nMOSFETs with SOI Thickness of Less Than 2 nm

2007 IEEE International SOI Conference ◽

10.1109/soi.2007.4357894 ◽

2007 ◽

Cited By ~ 1

Author(s):

Ken Shimizu ◽

Toshiro Hiramoto

Keyword(s):

Electron Mobility ◽

Thin Body ◽

Double Gate ◽

Mobility Degradation

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The effect of remote Coulomb scattering on electron mobility in La2O3gate stacked MOSFETs

Semiconductor Science and Technology ◽

10.1088/0268-1242/27/4/045014 ◽

2012 ◽

Vol 27 (4) ◽

pp. 045014 ◽

Cited By ~ 1

Author(s):

M Mamatrishat ◽

M Kouda ◽

T Kawanago ◽

K Kakushima ◽

P Ahmet ◽

...

Keyword(s):

Electron Mobility ◽

Coulomb Scattering

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Low Field Electron Mobility Degradation in Silicon MOS Transistors Under Uniform Hot Electron Injection

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2017.2694062 ◽

2017 ◽

Vol 17 (2) ◽

pp. 422-431

Author(s):

Mattia Rossetti

Keyword(s):

Electron Mobility ◽

Electron Injection ◽

Hot Electron ◽

Mos Transistors ◽

Low Field ◽

Field Electron ◽

Mobility Degradation ◽

Hot Electron Injection

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Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOxgate stacks in bulk Ge pMOSFET with GeOxgrown by ozone oxidation

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/aa6f96 ◽

2017 ◽

Vol 50 (24) ◽

pp. 245102 ◽

Cited By ~ 3

Author(s):

Lixing Zhou ◽

Xiaolei Wang ◽

Xueli Ma ◽

Jinjuan Xiang ◽

Hong Yang ◽

...

Keyword(s):

Charge Distribution ◽

Hole Mobility ◽

Coulomb Scattering ◽

Ozone Oxidation ◽

Mobility Degradation

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