Surface roughness and electron backscattering in high aspect ratio silicon nanowires

2011 ◽  
Vol 88 (8) ◽  
pp. 2368-2371 ◽  
Author(s):  
G. Pennelli ◽  
M. Totaro ◽  
P. Bruschi
Keyword(s):  
Surface Roughness ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Electron Backscattering

scholarly journals Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Solar Cell Application ◽  
Catalytic Chemical Vapor Deposition ◽  
Metal Assisted Chemical Etching

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).

Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching

2012 ◽  
Vol 1512 ◽  
Author(s):  
Jian-Wei Ho ◽  
Qixun Wee ◽  
Jarrett Dumond ◽  
Li Zhang ◽  
Keyan Zang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Cross Sections ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Semiconductor Device ◽  
Imprint Lithography ◽  
Wafer Level ◽  
Conventional Photolithography ◽  
Metal Assisted Chemical Etching

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.

scholarly journals Nanostructured Electrodes for Improved Neural Recording

2002 ◽  
Vol 729 ◽  
Author(s):  
Karen C. Cheung ◽  
Yang-Kyu Choi ◽  
Tim Kubow ◽  
Luke P. Lee
Keyword(s):  
Cell Culture ◽  
Surface Roughness ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electrode Surface ◽  
Neural Recording ◽  
New Method ◽  
Nanostructured Electrodes

AbstractWe present a new method of increasing the effective electrode surface for improved neural recording. To optimize the electrode, the impedance can be decreased by introducing surface roughness or nanostructures on the electrode. High aspect ratio pillar-like polysilicon nanostructures are created in a reactive ion etch. Nanostructure robustness in cell culture is examined.

Parameter Optimization for Grinding Process of Micropores with High Aspect Ratio

2015 ◽  
Vol 1095 ◽  
pp. 795-799
Author(s):  
Feng Che Tsai ◽  
Yann Long Lee ◽  
Ju Chun Yeh
Keyword(s):  
Surface Roughness ◽  
Aspect Ratio ◽  
Parameter Optimization ◽  
High Aspect Ratio ◽  
Grinding Process ◽  
Average Roughness ◽  
Abrasive Particles ◽  
Abrasive Jet Machining ◽  
Mix Proportion ◽  
Labor Consuming

Parameter optimization for grinding process of micropores with high aspect ratio is discussed in this research. To ensure the surface accuracy on the inner side of deep micropore, the manual polishing or reaming process is a commonly adopted method. However, this process has disadvantages of limitation by operators’ experience and technique, labor consuming, and high cost. Skilled operators are also difficult to train nowadays. In order to address those flaws, this study applied the subtle abrasive jet machining technology and Taguchi Method for experimental design, so as to effectively obtain the appropriate surface roughness and processing uniformity. The Taguchi experimental results showed that when applying a Vacuum Pressure of 60 cmHg and a Air Pressure of 0.5 Mpa, the optimal polishing effect was attained using #2000SiC abrasive particles and an Mix Proportion (SiC: Additive) 2: 1. The average roughness of lifting pin hole was reduced from an original value of Ra 2.39 mm (Rmax: 10.74 mm) to a final value of Ra 0.07 mm (Rmax: 1.10 mm).

Nanofabrication of silicon nanowires with high aspect ratio for photo-electron sensing

2018 ◽  
Vol 195 ◽  
pp. 139-144 ◽  
Author(s):  
Bo Feng ◽  
Jianan Deng ◽  
Bingrui Lu ◽  
Chen Xu ◽  
Yiwen Wang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Silicon Nanowires ◽  
High Aspect Ratio

Optical properties of high aspect ratio plasma etched silicon nanowires: fabrication-induced variability dramatically reduces reflectance

2015 ◽  
Vol 26 (8) ◽  
pp. 085301 ◽  
Author(s):  
A Smyrnakis ◽  
E Almpanis ◽  
V Constantoudis ◽  
N Papanikolaou ◽  
E Gogolides
Keyword(s):  
Optical Properties ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Etched Silicon

High aspect ratio silicon nanowires control fibroblast adhesion and cytoskeleton organization

2017 ◽  
Vol 28 (15) ◽  
pp. 155102 ◽  
Author(s):  
Laura Andolfi ◽  
Anna Murello ◽  
Damiano Cassese ◽  
Jelena Ban ◽  
Simone Dal Zilio ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Control Fibroblast ◽  
Cytoskeleton Organization ◽  
Fibroblast Adhesion

Densely Packed Arrays of Ultra-High-Aspect-Ratio Silicon Nanowires Fabricated using Block-Copolymer Lithography and Metal-Assisted Etching

2009 ◽  
Vol 19 (15) ◽  
pp. 2495-2500 ◽  
Author(s):  
Shih-Wei Chang ◽  
Vivian P. Chuang ◽  
Steven T. Boles ◽  
Caroline A. Ross ◽  
Carl V. Thompson
Keyword(s):  
Block Copolymer ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Block Copolymer Lithography ◽  
Copolymer Lithography
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