Densely Packed Arrays of Ultra-High-Aspect-Ratio Silicon Nanowires Fabricated using Block-Copolymer Lithography and Metal-Assisted Etching

2009 ◽  
Vol 19 (15) ◽  
pp. 2495-2500 ◽  
Author(s):  
Shih-Wei Chang ◽  
Vivian P. Chuang ◽  
Steven T. Boles ◽  
Caroline A. Ross ◽  
Carl V. Thompson
Keyword(s):  
Block Copolymer ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Block Copolymer Lithography ◽  
Copolymer Lithography

Fabrication of densely packed, well-ordered, high-aspect-ratio silicon nanopillars over large areas using block copolymer lithography

2006 ◽  
Vol 513 (1-2) ◽  
pp. 289-294 ◽  
Author(s):  
Vignesh Gowrishankar ◽  
Nathaniel Miller ◽  
Michael D. McGehee ◽  
Matthew J. Misner ◽  
Du Yeol Ryu ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Block Copolymer Lithography ◽  
Copolymer Lithography

scholarly journals Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Solar Cell Application ◽  
Catalytic Chemical Vapor Deposition ◽  
Metal Assisted Chemical Etching

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).

Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching

2012 ◽  
Vol 1512 ◽  
Author(s):  
Jian-Wei Ho ◽  
Qixun Wee ◽  
Jarrett Dumond ◽  
Li Zhang ◽  
Keyan Zang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Cross Sections ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Semiconductor Device ◽  
Imprint Lithography ◽  
Wafer Level ◽  
Conventional Photolithography ◽  
Metal Assisted Chemical Etching

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.

Block copolymer self-assembly assisted fabrication of laterally organized- and stacked- nanoarrays

2021 ◽  
Author(s):  
Vignesh Suresh ◽  
Ah Bian Chew ◽  
Christina Yuan Ling Tan ◽  
Hui Ru Tan
Keyword(s):  
Block Copolymer ◽  
Self Assembly ◽  
The Self ◽  
Functional Surfaces ◽  
Self Assembled ◽  
Block Copolymer Lithography ◽  
Unique Surface ◽  
Copolymer Lithography

Abstract Block copolymer (BCP) self-assembly processes are often seen as reliable techniques for advanced nanopatterning to achieve functional surfaces and create templates for nanofabrication. By taking advantage of the tunability in pitch, diameter and feature-to-feature separation of the self-assembled BCP features, complex, laterally organized- and stacked- multicomponent nanoarrays comprising of gold and polymer have been fabricated. The approaches not only demonstrate nanopatterning of up to two levels of hierarchy but also investigate how a variation in the feature-to-feature gap at the first hierarchy affects the self-assembly of polymer features at the second. Such BCP self-assembly enabled multicomponent nanoarray configurations are rarely achieved by other nanofabrication approaches and are particularly promising for pushing the boundaries of block copolymer lithography and in creating unique surface architectures and complex morphologies at the nanoscale.

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