scholarly journals Nanostructured Electrodes for Improved Neural Recording

2002 ◽  
Vol 729 ◽  
Author(s):  
Karen C. Cheung ◽  
Yang-Kyu Choi ◽  
Tim Kubow ◽  
Luke P. Lee
Keyword(s):  
Cell Culture ◽  
Surface Roughness ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electrode Surface ◽  
Neural Recording ◽  
New Method ◽  
Nanostructured Electrodes

AbstractWe present a new method of increasing the effective electrode surface for improved neural recording. To optimize the electrode, the impedance can be decreased by introducing surface roughness or nanostructures on the electrode. High aspect ratio pillar-like polysilicon nanostructures are created in a reactive ion etch. Nanostructure robustness in cell culture is examined.

Parameter Optimization for Grinding Process of Micropores with High Aspect Ratio

2015 ◽  
Vol 1095 ◽  
pp. 795-799
Author(s):  
Feng Che Tsai ◽  
Yann Long Lee ◽  
Ju Chun Yeh
Keyword(s):  
Surface Roughness ◽  
Aspect Ratio ◽  
Parameter Optimization ◽  
High Aspect Ratio ◽  
Grinding Process ◽  
Average Roughness ◽  
Abrasive Particles ◽  
Abrasive Jet Machining ◽  
Mix Proportion ◽  
Labor Consuming

Parameter optimization for grinding process of micropores with high aspect ratio is discussed in this research. To ensure the surface accuracy on the inner side of deep micropore, the manual polishing or reaming process is a commonly adopted method. However, this process has disadvantages of limitation by operators’ experience and technique, labor consuming, and high cost. Skilled operators are also difficult to train nowadays. In order to address those flaws, this study applied the subtle abrasive jet machining technology and Taguchi Method for experimental design, so as to effectively obtain the appropriate surface roughness and processing uniformity. The Taguchi experimental results showed that when applying a Vacuum Pressure of 60 cmHg and a Air Pressure of 0.5 Mpa, the optimal polishing effect was attained using #2000SiC abrasive particles and an Mix Proportion (SiC: Additive) 2: 1. The average roughness of lifting pin hole was reduced from an original value of Ra 2.39 mm (Rmax: 10.74 mm) to a final value of Ra 0.07 mm (Rmax: 1.10 mm).

Laser Micromachining of Thin Beams for Silicon MEMS: Optimization of Cutting Parameters Using the Taguchi Method

2015 ◽  
Author(s):  
Tim P. Pusch ◽  
Mario D’Auria ◽  
Nima Tolou ◽  
Andrew S. Holmes
Keyword(s):  
Surface Roughness ◽  
Aspect Ratio ◽  
Taguchi Method ◽  
High Aspect Ratio ◽  
Side Wall ◽  
Cutting Parameters ◽  
Taper Angle ◽  
Aspect Ratios ◽  
Thin Beams ◽  
Optimization Of Cutting Parameters

While thin beams are widely used structural elements in Micro-Electro-Mechanical-Systems (MEMS) there are very few studies investigating the laser machining of clean high aspect ratio silicon beams. This work presents a systematic study of selected influencing cutting parameters with the goal of machining high aspect ratio beams with low side wall surface roughness (Ra) and high cross section verticality, i.e. low taper angle. The Taguchi method was used to find the optimal setting for each of the selected parameters (pulse frequency, laser diode current, pulse overlap, number of patterns to be marked, gap size between patterns) utilizing orthogonal arrays and signal-to-noise (S/N) ratio analysis. Double-sided clamped beams of 100μm width and 10mm length were machined in silicon wafers of 525μm thickness using a nanosecond solid-state UV laser system (355nm wavelength). Our experimental results show that beams with an aspect ratio as high as 17.5 can be manufactured. Furthermore, a surface roughness of Ra = 0.37μm and taper angle of α = 2.52 degrees can be achieved. This will make the fast fabrication of MEMS devices with aspect ratios as high as those from deep reactive ion etching possible.

scholarly journals Generation of High Aspect Ratio Metal Microstructures Exhibiting Low Surface Roughness by Drop-wise Printing of Liquid Metal

2015 ◽  
Vol 120 ◽  
pp. 1103-1106 ◽  
Author(s):  
N. Lass ◽  
B. Gerdes ◽  
M. Jehle ◽  
L. Riegger ◽  
R. Zengerle ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Aspect Ratio ◽  
Liquid Metal ◽  
High Aspect Ratio

Influences of Cross-Sectional Geometry and Surface Roughness on the Compression Stability in Upsetting High Aspect-Ratio Shaped Billets by FE Analysis

2006 ◽  
Author(s):  
Yuan-Chuan Hsu ◽  
Heng-Sheng Lin ◽  
Tung-Sheng Yang
Keyword(s):  
Surface Roughness ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Metal Forming ◽  
Fe Analysis ◽  
Cross Sectional ◽  
Shape Factors ◽  
Element Simulation ◽  
Billet Cross Section ◽  
Sectional Shape

Metal forming for micro or mini-parts is a new developing trend in the metal forming application. The analysis of billet compression stability in upsetting is essential in selecting forming parameters and determining the size effect. The current study aims to explore the influence of billet geometry and surface roughness on the compression stability in upsetting high aspect-ratio shaped billets. 3D finite element simulation was employed to analyze the influence of surface roughness on the end faces of the billet and shapes profiles of the billet cross-section, on buckling in upsetting mini-size billets. Simulation results indicated that the rougher the contact surface, the lower was compression stability in upsetting the billets. In addition, the cross-sectional shape of the billet affected the compression stability in upsetting. Mini billets with larger shape factors would lead to higher compression stability.

scholarly journals ADVANCED PROCESS OF DEEP ANISOTROPIC ETCHING OF SILICON WITH A HIGH ASPECT RATIO FOR THE FORMATION OF TSV STRUCTURES

2020 ◽  
Author(s):  
Vladimir Dolgopolov ◽  
Pavel Irakin ◽  
Viktor Varakin
Keyword(s):  
Surface Roughness ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Three Dimensional ◽  
Anisotropic Etching

The aim of this work was to improve the existing technology of deep anisotropic etching of silicon for its application in the manufacture of three-dimensional TSV structures, namely, to increase the selectivity to the mask and reduce the surface roughness.

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