Stress-induced leakage current at low field in NMOS and PMOS devices with ultra-thin nitrided gate oxide

2004 ◽  
Vol 72 (1-4) ◽  
pp. 241-246 ◽  
Author(s):  
M Fadlallah ◽  
G Ghibaudo ◽  
M Bidaud ◽  
O Simonetti ◽  
F Guyader
Keyword(s):  
Leakage Current ◽  
Gate Oxide ◽  
Low Field ◽  
Stress Induced Leakage Current

Stress induced leakage current at low field in ultra thin oxides

2001 ◽  
Vol 41 (9-10) ◽  
pp. 1421-1425 ◽  
Author(s):  
F. Lime ◽  
G. Ghibauda ◽  
G. Guégan
Keyword(s):  
Leakage Current ◽  
Low Field ◽  
Stress Induced Leakage Current

The conduction mechanism of stress induced leakage current through ultra-thin gate oxide under constant voltage stresses

2005 ◽  
Vol 14 (9) ◽  
pp. 1886-1891 ◽  
Author(s):  
Wang Yan-Gang ◽  
Xu Ming-Zhen ◽  
Tan Chang-Hua ◽  
Zhang J F. ◽  
Duan Xiao-Rong
Keyword(s):  
Leakage Current ◽  
Conduction Mechanism ◽  
Gate Oxide ◽  
Constant Voltage ◽  
Stress Induced Leakage Current ◽  
Thin Gate Oxide

Stress-induced leakage current reduction by a low field of opposite polarity to the stress field

1998 ◽  
Vol 84 (9) ◽  
pp. 5070-5079 ◽  
Author(s):  
A. Meinertzhagen ◽  
C. Petit ◽  
M. Jourdain ◽  
F. Mondon
Keyword(s):  
Stress Field ◽  
Leakage Current ◽  
Opposite Polarity ◽  
Low Field ◽  
Stress Induced Leakage Current ◽  
Current Reduction

Correlation Between Gate Induced Drain Leakage and Plasma Induced Interface Traps

1999 ◽  
Vol 592 ◽  
Author(s):  
Siguang Ma ◽  
Yaohui Zhang ◽  
M. F. Li ◽  
Weidan Li ◽  
J. L. F. Wang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Field Enhancement ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Deep Submicron ◽  
Interface Traps ◽  
Low Field ◽  
Polysilicon Gate ◽  
Gate Oxide Thickness ◽  
Thin Gate Oxide

ABSTRACTIn this paper we carefully investigate the correlation between gate induced drain leakage current and plasma induced damages in the deep submicron p+ polysilicon gate pMOSFETs with gate oxide thickness of 50 Å. Low field enhancement of gate induced drain leakage current caused by plasma charging damage is a function of metal 1 antenna area/length ratio and cell location. Combined with the charge pumping measurements, it is found that gate induced drain leakage current enhancement is mainly due to the plasma induced interface traps. A linear relationship between the gate induced drain leakage and the plasma induced interface trap density is observed within the experimental error. On the other hand, the threshold voltage measurements show that oxide trapped charge has no major contribution to, and no correlation with, the gate induced drain leakage current for thin gate oxide MOSFET devices.

Study of Stress-Induced Leakage Current in Thin Oxides Stressed by Corona Charging in Air: Relationship to GOI Defects

1999 ◽  
Vol 592 ◽  
Author(s):  
M. Wilson ◽  
J. Lagowski ◽  
A. Savtchou ◽  
D. Marinskiy ◽  
L. Jastrzebski ◽  
...  
Keyword(s):  
Leakage Current ◽  
Defect Density ◽  
Contact Potential Difference ◽  
Gate Oxide ◽  
Interface Roughness ◽  
Potential Difference ◽  
Contact Potential ◽  
Corona Charging ◽  
Stress Induced Leakage Current ◽  
Gate Oxide Integrity

ABSTRACTCorona charging in air combined with non-contact oxide charge measurement with a contact potential difference probe provides an unique possibility for fast monitoring of electron tunneling characteristics without preparation of MOS capacitors. It has also been found tha corona charging of thin oxides in the tunneling range is very effective in generating stressinduced leakage current. In this work we demonstrate the sensitivity of the corona stressinduced leakage current magnitude to gate oxide integrity defect density. The experimenta results cover three of the most common gate oxide integrity defects, namely: 1 – the defect induced by heavy metals (Fe.Cu) at a practically important low concentration range of 1×1010 to 1×1011 atoms/cm3: 2 – the defects originating from interface roughness and 3–the defects related to crystal originated particles.At low corona stress fluence, these defects play no role in the tunneling characteristics which follow ideal Fowler-Nordheim characteristics for oxides 50Å or thicker and a contribution from a direct tunneling current for thinner oxides. At high corona stress fluences, gate oxide integrity defects control the magnitude of stress-induced leakage current measured at constan oxide field. It is suggested that the gate oxide integrity role is associated with the enhanced rate of the trap generation during stress. It is noted that the present findings employ a novel methodology for gate oxide integrity monitoring based on corona charging and contact potential difference measurement.

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