Stress-induced leakage current reduction by a low field of opposite polarity to the stress field

1998 ◽  
Vol 84 (9) ◽  
pp. 5070-5079 ◽  
Author(s):  
A. Meinertzhagen ◽  
C. Petit ◽  
M. Jourdain ◽  
F. Mondon
Keyword(s):  
Stress Field ◽  
Leakage Current ◽  
Opposite Polarity ◽  
Low Field ◽  
Stress Induced Leakage Current ◽  
Current Reduction

Stress induced leakage current at low field in ultra thin oxides

2001 ◽  
Vol 41 (9-10) ◽  
pp. 1421-1425 ◽  
Author(s):  
F. Lime ◽  
G. Ghibauda ◽  
G. Guégan
Keyword(s):  
Leakage Current ◽  
Low Field ◽  
Stress Induced Leakage Current

Stress-induced leakage current at low field in NMOS and PMOS devices with ultra-thin nitrided gate oxide

2004 ◽  
Vol 72 (1-4) ◽  
pp. 241-246 ◽  
Author(s):  
M Fadlallah ◽  
G Ghibaudo ◽  
M Bidaud ◽  
O Simonetti ◽  
F Guyader
Keyword(s):  
Leakage Current ◽  
Gate Oxide ◽  
Low Field ◽  
Stress Induced Leakage Current

Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress

2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky
Keyword(s):  
Leakage Current ◽  
Electrical Performance ◽  
Constant Current ◽  
Continuous Increase ◽  
Current Stress ◽  
Thermal Oxide ◽  
Stress Induced Leakage Current ◽  
Boron Penetration ◽  
Soft Breakdown ◽  
Induced Defects

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.

Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method

2018 ◽  
Vol 28 (8) ◽  
pp. 440-444
Author(s):  
Kwang-Jin Lee ◽  
◽  
Doyeon Kim ◽  
Duck-Kyun Choi ◽  
Woo-Byoung Kim
Keyword(s):  
Leakage Current ◽  
Chemical Cleaning ◽  
Cleaning Method ◽  
Current Reduction

Organic synaptic devices based on ionic gel with reduced leakage current

2021 ◽  
Vol 57 (15) ◽  
pp. 1907-1910
Author(s):  
Dapeng Liu ◽  
Yiwei Zhao ◽  
Qianqian Shi ◽  
Shilei Dai ◽  
Li Tian ◽  
...  
Keyword(s):  
Solid State ◽  
Leakage Current ◽  
Dielectric Film ◽  
Neuromorphic Computing ◽  
Computing Systems ◽  
Current Reduction

A solid-state hybrid electrolyte dielectric film was designed for leakage current reduction, synaptic simulation and neuromorphic computing systems.

A Single-Phase Five-Level Transformer-Less PV Inverter for Leakage Current Reduction

2021 ◽  
pp. 1-1
Author(s):  
Xiaonan Zhu ◽  
Hongliang Wang ◽  
Wenyuan Zhang ◽  
Hanzhe Wang ◽  
Xiaojun Deng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Single Phase ◽  
Pv Inverter ◽  
Current Reduction
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