Oxidative annealing of ZnSe/GaAs heterostructures

2008 ◽  
Vol 62 (24) ◽  
pp. 3969-3971 ◽  
Author(s):  
Oleg Maksimov
Keyword(s):  
2008 ◽  
Vol 104 (3) ◽  
pp. 033919 ◽  
Author(s):  
Z. L. Lu ◽  
G. Q. Yan ◽  
S. Wang ◽  
W. Q. Zou ◽  
Z. R. Mo ◽  
...  

Author(s):  
С.В. Рябцев ◽  
Д.А.А. Гхариб ◽  
С.Ю. Турищев ◽  
Л.А. Обвинцева ◽  
А.В. Шапошник ◽  
...  

PdO films were obtained by thermal deposition of palladium metal with a thickness of 30 and 90 nm, followed by its oxidation in air at different temperatures. PdO oxide films are characterized by transmission electron microscopy (TEM) and reflection high-energy electron diffraction (RHEED). Data on the semiconductor properties and gas sensitivity to different concentrations of ozone in the air are obtained. The optimal temperature conditions for the oxidation of the films are established, which ensure their uniform phase composition and the absence of electrical noise during the detection of gases. The mechanism of the electrical noise appearance in ultrathin films associated with their fragmentation during oxidative annealing is proposed and justified. The possibility of detecting ozone impurities in the air below the maximum permissible concentration (MPC) by PdO semiconductor films is shown.


2017 ◽  
Vol 5 (5) ◽  
pp. 2123-2131 ◽  
Author(s):  
Unseock Kang ◽  
Hyunwoong Park

A single CuFeO2/CuO sample is thermally healed by recycling weekly via oxidative annealing, producing formate continuously for 35 d.


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