Optical Absorbance and Photoelectrochemical Quantum Efficiency of Titanium Oxide Modified by Ion Implantation and Reductive/Oxidative Annealing

1986 ◽  
Vol 90 (7) ◽  
pp. 593-598 ◽  
Author(s):  
D. M. Teschner ◽  
R. Schumacher ◽  
B. Stritzker
Keyword(s):  
Ion Implantation ◽  
Titanium Oxide ◽  
Quantum Efficiency ◽  
Optical Absorbance ◽  
Oxidative Annealing

scholarly journals Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

Photonics ◽  
2020 ◽  
Vol 7 (3) ◽  
pp. 68
Author(s):  
Arash Dehzangi ◽  
Donghai Wu ◽  
Ryan McClintock ◽  
Jiakai Li ◽  
Alexander Jaud ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantum Efficiency ◽  
Current Density ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Type Ii ◽  
Dark Current Density ◽  
Applied Bias ◽  
Type Ii Superlattice ◽  
Specific Detectivity

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs1−xSbx superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivity of 0.76 A/W at 3.8 µm, corresponding to a quantum efficiency, without anti-reflection coating, of 21.5% under an applied bias of +40 mV with a 100% cut-off wavelength of 4.6 µm. With a dark current density of 5.21 × 10−6 A/cm2, under +40 mV applied bias and at 77 K, the photodetector exhibited a specific detectivity of 4.95 × 1011 cm·Hz1/2/W.

Rapid Isothermal Annealing of N-Implanted 6H-SiC Layers Used for Fabrication of p-n Photodiodes

1987 ◽  
Vol 97 ◽  
Author(s):  
Gerhard Pensl ◽  
Reinhard Helbig ◽  
Hong Zhang ◽  
Gonther Ziegler ◽  
Peter Lanig
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Quantum Efficiency ◽  
Isothermal Annealing ◽  
Furnace Annealing ◽  
Hall Effect Measurements

ABSTRACTIon implantation of 14N and Rapid Isothermal Annealing (RIA) were employed to achieve n-type doping in epitaxial-grown 6H-SiC layers. The electrical properties of the implanted films were investigated by Hall effect measurements in order to optimize the annealing parameters. In comparison with standard furnace annealing (1470°C/7min), the annealing parameters for the RIA process could be considerably reduced (1050°C/4min). Based on planar technique, implanted p-n junctions were fabricated. The temperature dependence of I-V characteristics and of the quantum efficiency of photodiodes were studied. The maximum of the quantum efficiency at γ=330 nm reaches values of 35% at 400°C.

scholarly journals Si-QD Synthesis for Visible Light Emission, Color Conversion, and Optical Switching

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3635
Author(s):  
Chih-Hsien Cheng ◽  
Gong-Ru Lin
Keyword(s):  
Ion Implantation ◽  
Visible Light ◽  
Quantum Efficiency ◽  
Optical Switching ◽  
Light Emission ◽  
Porous Si ◽  
Host Matrix ◽  
Color Conversion ◽  
Si Ion Implantation ◽  
Visible Light Emission

This paper reviews the developing progress on the synthesis of the silicon quantum dots (Si-QDs) via the different methods including electrochemical porous Si, Si ion implantation, and plasma enhanced chemical vapor deposition (PECVD), and exploring their featured applications for light emitting diode (LED), color-converted phosphors, and waveguide switching devices. The characteristic parameters of Si-QD LED via different syntheses are summarized for discussion. At first, the photoluminescence spectra of Si-QD and accompanied defects are analyzed to distinguish from each other. Next, the synthesis of porous Si and the performances of porous Si LED reported from different previous works are compared in detail. Later on, the Si-QD implantation in silicide (SiX) dielectric films developed to solve the instability of porous Si and their electroluminescent performances are also summarized for realizing the effect of host matrix to increase the emission quantum efficiency. As the Si-ion implantation still generates numerous defects in host matrix owing to physical bombardment, the PECVD method has emerged as the main-stream methodology for synthesizing Si-QD in SiX semiconductor or dielectric layer. This method effectively suppresses the structural matrix imperfection so as to enhance the external quantum efficiency of the Si-QD LED. With mature synthesis technology, Si-QD has been comprehensively utilized not only for visible light emission but also for color conversion and optical switching applications in future academia and industry.

Sign in / Sign up

Export Citation Format

Share Document