ChemInform Abstract: Optical Absorbance (A) and Photoelectrochemical Quantum Efficiency (n) of Titanium Oxide Modified by Ion lmplantation and Reductive/Oxidative Annealing.

1986 ◽  
Vol 17 (42) ◽  
Author(s):  
D. M. TESCHNER ◽  
R. SCHUMACHER ◽  
B. STRITZKER
Keyword(s):  
Titanium Oxide ◽  
Quantum Efficiency ◽  
Optical Absorbance ◽  
Oxidative Annealing

Thermal lens determination of fluorescence quantum efficiency of3F4level of Tm3+ions in solids

2005 ◽  
Vol 125 ◽  
pp. 193-196 ◽  
Author(s):  
S. L. Oliveira ◽  
S. M. Lima ◽  
T. Catunda ◽  
H. Vargas ◽  
L. A.O. Nunes ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Thermal Lens

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Electron Holographic Nano-Characterization of Gold Catalyst at Interface

2002 ◽  
Vol 727 ◽  
Author(s):  
S. Ichikawa ◽  
T. Akita ◽  
M. Okumura ◽  
M. Haruta ◽  
K. Tanaka
Keyword(s):  
Contact Angle ◽  
Titanium Oxide ◽  
Gold Catalyst ◽  
Three Dimensional ◽  
High Resolution Electron Microscopy ◽  
Electron Holography ◽  
Gold Particles ◽  
Oxide Support ◽  
The Mean ◽  
A Charge

AbstractThe catalytic properties of nanostructured gold catalyst are known to depend on the size of the gold particles and to be activated when the size decreases to a few nanometers. We investigated the size dependence of the three-dimensional nanostructure on the mean inner potential of gold catalysts supported on titanium oxide using electron holography and high-resolution electron microscopy (HREM). The contact angle of the gold particles on the titanium oxide tended to be over 90° for gold particles with a size of over 5 nm, and below 90° for a size of below 2 nm. This decreasing change in the contact angle (morphology) acts to increase the perimeter and hence the area of the interface between the gold and titanium oxide support, which is considered to be an active site for CO oxidation. The mean inner potential of the gold particles also changed as their size decreased. The value of the inner potential of gold, which is approximately 25 V in bulk state, rose to over 40 V when the size of the gold particles was less than 2 nm. This phenomenon indicates the existence of a charge transfer at the interface between gold and titanium oxide. The 3-D structure change and the inner potential change should be attributed to the specific electronic structure at the interface, owing to both the “nano size effect” and the “hetero-interface effect.”

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