Characterization of n-GaN dilute magnetic semiconductors by cobalt ions implantation at high-fluence

2012 ◽  
Vol 324 (5) ◽  
pp. 797-801 ◽  
Author(s):  
G. Husnain ◽  
Yao Shu-De ◽  
Ishaq Ahmad ◽  
H.M. Rafique ◽  
Arshad Mahmood
Keyword(s):  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
High Fluence ◽  
Cobalt Ions ◽  
Ions Implantation

scholarly journals Synthesis and Characterization of Sodium Bis(2-ethylhexyl) Sulfonsuccinate (AOT) Capped Pure and Mn-Doped CdS Nanoparticles

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
D. Venkatesan ◽  
D. Deepan ◽  
J. Ramkumar ◽  
S. Moorthy Babu ◽  
R. Dhanasekaran
Keyword(s):  
Thin Films ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Transition Metal Ions ◽  
Hexagonal Structure ◽  
Cds Nanoparticles ◽  
Sem Images ◽  
Semiconducting Properties ◽  
Mn Doped

CdS nanoparticles and thin films are well known for their excellent semiconducting properties. When transition metal ions are doped into the CdS, it exhibits magnetic properties in addition to semiconducting properties and they are termed as dilute magnetic semiconductors (DMSs). In this paper, we discuss the preparation of sodium bis(2-ethylhexyl) sulfonsuccinate (AOT) capped CdS nanoparticles and thin films doped with magnetic impurity Mn. Sodium bis(2-ethulexyl) sulfonsuccinate (AOT), capping agent promotes the uniform formation of nanoparticles. Optical characterizations are made using the UV-Vis spectrometer, PL, and FTIR. XRD shows the hexagonal structure of the CdS. SEM images and EDS measurements were made for the thin films. EPR shows the clear hyperfine lines corresponding to Mn2+ion in the CdS nanoparticles.

THE GROWTH AND CHARACTERIZATION OF ROOM TEMPERATURE FERROMAGNETIC WIDEBAND-GAP MATERIALS FOR SPINTRONIC APPLICATIONS

2006 ◽  
Vol 16 (02) ◽  
pp. 515-543
Author(s):  
MATTHEW H. KANE ◽  
MARTIN STRASSBURG ◽  
WILLIAM E. FENWICK ◽  
ALI ASGHAR ◽  
IAN T. FERGUSON
Keyword(s):  
Room Temperature ◽  
Magnetic Semiconductors ◽  
Room Temperature Ferromagnetism ◽  
Dilute Magnetic Semiconductors ◽  
Chemical Vapor ◽  
Wide Bandgap ◽  
Organic Chemical ◽  
Ferromagnetic Behavior ◽  
Spintronic Devices

Wide-bandgap dilute magnetic semiconductors (DMS), such as transition-metal doped ZnO and GaN , have gained attention for use in spintronic devices because of predictions and experimental reports of room temperature ferromagnetism which may enable their use in spintronic devices. However, there has been some debate over the source of ferromagnetism in these materials. This paper focuses on the high quality growth of wide bandgap DMS, and the characterization of Zn 1-x Mn x O produced by melt-growth techniques and Ga 1-x Mn x N grown by metal organic chemical vapor deposition (MOCVD). High resolution X-ray diffraction results revealed no second phases in either the ZnO crystals or the GaN films. Undoped as-grown, bulk crystals of Zn 1-x Mn x O and Zn 1-x Co x O crystals are shown to be paramagnetic at all temperatures. In contrast, the Ga 1-x Mn x N films showed ferromagnetic behavior at room temperature under optimum growth conditions. Experimental identification of the Mn ion charge state and the presence of bands in the bandgap of GaN are investigated by optical spectroscopy and electron spin paramagnetic resonance (EPR). It is shown that the broadening of states in the Mn 3d shell scaled with Mn concentration, and that optical transitions due to this band correlated with the strong ferromagnetism in these samples. However, this band disappeared with an increase in free electron concentration provided by either annealing or doping. Raman studies of Ga 1-x Mn x N revealed two predominant Mn -related modes featured with increasing concentration, a broad disorder related structure at 300cm-1 and a sharper peak at 669cm-1 This works show that the development of practical ferromagnetic wide bandgap DMS materials for spintronic applications will require both the lattice site introduction of Mn as well as careful control of the background defect concentration to optimize these materials.

Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors

2005 ◽  
Vol 290-291 ◽  
pp. 1395-1397 ◽  
Author(s):  
Lin Gu ◽  
Stephen Y. Wu ◽  
H.X. Liu ◽  
R.K. Singh ◽  
N. Newman ◽  
...  
Keyword(s):  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN

2020 ◽  
pp. 110541
Author(s):  
C.A. Hernández-Gutiérrez ◽  
Yuriy Kudriavtsev ◽  
Dagoberto Cardona ◽  
A.G. Hernández ◽  
J.L. Camas-Anzueto
Keyword(s):  
Ion Implantation ◽  
Chemical Characterization ◽  
High Fluence

scholarly journals Origin of transition metal clustering tendencies in GaAs based dilute magnetic semiconductors

2005 ◽  
Vol 86 (17) ◽  
pp. 172504 ◽  
Author(s):  
Priya Mahadevan ◽  
J. M. Osorio-Guillén ◽  
Alex Zunger
Keyword(s):  
Transition Metal ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors

scholarly journals Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

2012 ◽  
Vol 258 (19) ◽  
pp. 7395-7400 ◽  
Author(s):  
R.M.S. dos Reis ◽  
R.L. Maltez ◽  
E.C. Moreira ◽  
Y.P. Dias ◽  
H. Boudinov
Keyword(s):  
High Fluence ◽  
Tem Characterization

Room temperature ferromagnetism in III–V and II–IV–V2 dilute magnetic semiconductors

2006 ◽  
Vol 374-375 ◽  
pp. 430-432 ◽  
Author(s):  
V.G. Storchak ◽  
D.G. Eshchenko ◽  
H. Luetkens ◽  
E. Morenzoni ◽  
R.L. Lichti ◽  
...  
Keyword(s):  
Room Temperature ◽  
Magnetic Semiconductors ◽  
Room Temperature Ferromagnetism ◽  
Dilute Magnetic Semiconductors
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