scholarly journals Raman and TEM characterization of high fluence C implanted nanometric Si on insulator

2012 ◽  
Vol 258 (19) ◽  
pp. 7395-7400 ◽  
Author(s):  
R.M.S. dos Reis ◽  
R.L. Maltez ◽  
E.C. Moreira ◽  
Y.P. Dias ◽  
H. Boudinov
Keyword(s):  
High Fluence ◽  
Tem Characterization

TEM characterization of proton-exchanged LiNbO3 optical waveguides

1986 ◽  
Vol 44 ◽  
pp. 480-481
Author(s):  
W. E. Lee
Keyword(s):  
Refractive Index ◽  
Benzoic Acid ◽  
Optical Waveguides ◽  
Total Internal Reflection ◽  
Index Of Refraction ◽  
Optical Measurements ◽  
Lithium Ions ◽  
Wide Channel ◽  
Tem Characterization

An optical waveguide consists of a several-micron wide channel with a slightly different index of refraction than the host substrate; light can be trapped in the channel by total internal reflection.Optical waveguides can be formed from single-crystal LiNbO3 using the proton exhange technique. In this technique, polished specimens are masked with polycrystal1ine chromium in such a way as to leave 3-13 μm wide channels. These are held in benzoic acid at 249°C for 5 minutes allowing protons to exchange for lithium ions within the channels causing an increase in the refractive index of the channel and creating the waveguide. Unfortunately, optical measurements often reveal a loss in waveguiding ability up to several weeks after exchange.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

TEM Characterization of Pseudotetragonal Mullite

2001 ◽  
Vol 7 (S2) ◽  
pp. 426-427
Author(s):  
Bradley R. Johnson ◽  
Waltraud M. Kriven
Keyword(s):  
Phase Diagram ◽  
Spatial Relationship ◽  
Equilibrium Structure ◽  
Lattice Parameters ◽  
Orthorhombic Structure ◽  
Containerless Processing ◽  
Rich Phase ◽  
Tem Characterization ◽  
Solution Field

Mullite (3Al2O3•2SiO2) exists in a solid solution field (∼57-63 mol% Al2O3) as the only stable compound in the Al2O3•SiO2 phase diagram at ambient pressures. Equilibrium 3:2 mullite has an orthorhombic structure with b>a (o-mullite). However, when initially crystallized from molecularly mixed, 3:2 precursors at temperatures < 1200°C, the first phase that forms has lattice parameters with a ≈b. This structure is often termed pseudotetragonal mullite (pt-mullite), since even when the ‘a’ and ‘b’ lattice parameters are identical, they are symmetrically independent. Pseudotetragonal mullite has been shown to contain approx. 70 mol% Al2O3. with increasing time and temperature, the structure gradually assimilates the residual SiO2, and the lattice parameters change, such that by 1400°C, the material has attained its equilibrium structure and composition.TEM was used to determine the spatial relationship between the crystalline phase and the residual, amorphous, SiO2-rich phase in pt-mullite. The starting materials were quenched, 3:2 mullite beads and fibers (made by containerless processing).

Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN

2020 ◽  
pp. 110541
Author(s):  
C.A. Hernández-Gutiérrez ◽  
Yuriy Kudriavtsev ◽  
Dagoberto Cardona ◽  
A.G. Hernández ◽  
J.L. Camas-Anzueto
Keyword(s):  
Ion Implantation ◽  
Chemical Characterization ◽  
High Fluence

scholarly journals TEM Characterization of Self-Assembled Magnetic Nanowires

2002 ◽  
Vol 8 (S02) ◽  
pp. 1368-1369
Author(s):  
X. Zhao ◽  
Y. Liu ◽  
M. Zheng ◽  
Z. Hao ◽  
S. Bandyopadhay ◽  
...  
Keyword(s):  
Magnetic Nanowires ◽  
Tem Characterization ◽  
Self Assembled

AFM and TEM characterization of siRNAs lipoplexes: A combinatory tools to predict the efficacy of complexation

2013 ◽  
Vol 436 ◽  
pp. 459-466 ◽  
Author(s):  
Daniela Belletti ◽  
Massimo Tonelli ◽  
Flavio Forni ◽  
Giovanni Tosi ◽  
Maria Angela Vandelli ◽  
...  
Keyword(s):  
Tem Characterization

scholarly journals TEM Characterization of Heterojunctions for Photocatalytic Application: ZrO2-TiO2 and CuO/ZrO2-TiO2

2017 ◽  
Vol 23 (S1) ◽  
pp. 2036-2037
Author(s):  
D. Guerrero-Areque ◽  
Ricardo Gomez ◽  
H.A. Calderon
Keyword(s):  
Tem Characterization ◽  
Photocatalytic Application

TEM Characterization of Long Term Aged Interconnect Oxide Layers from Real Stack

2021 ◽  
Vol 103 (1) ◽  
pp. 1283-1300
Author(s):  
Stéphane Poitel ◽  
Samaneh Daviran ◽  
Manuel Bianco ◽  
Christian Walter ◽  
Kai Herbrig ◽  
...  
Keyword(s):  
Oxide Layers ◽  
Tem Characterization
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