scholarly journals Origin of transition metal clustering tendencies in GaAs based dilute magnetic semiconductors

2005 ◽  
Vol 86 (17) ◽  
pp. 172504 ◽  
Author(s):  
Priya Mahadevan ◽  
J. M. Osorio-Guillén ◽  
Alex Zunger
Keyword(s):  
Transition Metal ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors

A Review on Chemical Synthesis, Characterization and Optical Properties of Nanocrystalline Transition Metal Doped Dilute Magnetic Semiconductors

2013 ◽  
Vol 201 ◽  
pp. 103-129 ◽  
Author(s):  
Tokeer Ahmad ◽  
Sarvari Khatoon ◽  
Ruby Phul
Keyword(s):  
Optical Properties ◽  
Transition Metal ◽  
Magnetic Semiconductors ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Semiconductor ◽  
Dilute Magnetic Semiconductors ◽  
Exchange Interactions ◽  
Transition Metal Ions ◽  
Modern Technology ◽  
Metal Doped

Nanomaterials have fascinated researchers in recent years because these materials exhibit unusual optical, magnetic and electrical properties as compared to their bulk counterparts. Incorporating impurity ions into a semiconducting host to extend its properties has been one of the most important techniques that paved the way for the modern technology based on spintronic devices. Over the past few years, oxide based dilute magnetic semiconductors (DMSs) have gained remarkable interest due to the possibility of inducing room temperature ferromagnetism. This review describes the experimental developments and optical properties of oxide based DMSs, including the recent results on ZnO, CdO and In2O3 based systems. Optical properties of transition metal (TM)-doped ZnO, CdO and In2O3 dilute magnetic semiconductor nanoparticles show red shift in energy band gaps. Such types of phenomena are attributed to sp-d exchange interactions between band electrons and localized d-electrons of the substituted transition metal ions. Table of Contents

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

Room temperature ferromagnetism in III–V and II–IV–V2 dilute magnetic semiconductors

2006 ◽  
Vol 374-375 ◽  
pp. 430-432 ◽  
Author(s):  
V.G. Storchak ◽  
D.G. Eshchenko ◽  
H. Luetkens ◽  
E. Morenzoni ◽  
R.L. Lichti ◽  
...  
Keyword(s):  
Room Temperature ◽  
Magnetic Semiconductors ◽  
Room Temperature Ferromagnetism ◽  
Dilute Magnetic Semiconductors

Role of Embedded Clustering in Dilute Magnetic Semiconductors: Cr Doped GaN

2005 ◽  
Vol 95 (25) ◽  
Author(s):  
X. Y. Cui ◽  
J. E. Medvedeva ◽  
B. Delley ◽  
A. J. Freeman ◽  
N. Newman ◽  
...  
Keyword(s):  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors
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