Pony-size Cu nanoparticles confined in N-doped mesoporous carbon by chemical vapor deposition for efficient oxygen electroreduction

2018 ◽  
Vol 272 ◽  
pp. 233-241 ◽  
Author(s):  
Yangyang Ni ◽  
Zhengyan Chen ◽  
Fantao Kong ◽  
Yu Qiao ◽  
Aiguo Kong ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Mesoporous Carbon ◽  
Chemical Vapor ◽  
Oxygen Electroreduction ◽  
Cu Nanoparticles

scholarly journals Fabrication of Al2O3-Cu Nanocomposites Using Rotary Chemical Vapor Deposition and Spark Plasma Sintering

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Jianfeng Zhang ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Spark Plasma Sintering ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cu Nanoparticles ◽  
Organic Precursor ◽  
Beneficial Effects ◽  
Plasma Sintering ◽  
Vapor Deposition Technique ◽  
Spark Plasma

A two-step rotary chemical vapor deposition technique was developed to uniformly mix Cu nanoparticles with theγAl2O3powders, and then the as-obtained powders were consolidated to Al2O3-Cu nanocomposites by spark plasma sintering. In the RCVD process, the metal-organic precursor of copper dipivaloylmethanate (Cu(DPM)2) reacted with O2and then was reduced by H2in order to erase the contamination of carbon. At 1473 K, the relative density of Al2O3-Cu increased with increasingCCuand the maximum value was 97.7% atCCu= 5.2 mass%. The maximum fracture toughness of Al2O3-Cu was 4.1 MPa m1/2atCCu= 3.8 mass%, and 1 MPa m1/2higher than that of monolithic Al2O3, validating the beneficial effects of Cu nanoparticles.

scholarly journals Engineering Ultrathin Polyaniline in Micro/Mesoporous Carbon Supercapacitor Electrodes Using Oxidative Chemical Vapor Deposition

2017 ◽  
Vol 4 (8) ◽  
pp. 1601201 ◽  
Author(s):  
Yuriy Y. Smolin ◽  
Katherine L. Van Aken ◽  
Muhammad Boota ◽  
Masoud Soroush ◽  
Yury Gogotsi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Mesoporous Carbon ◽  
Chemical Vapor

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Coating of continuous carbon fibers with double layers by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Double Layers
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