Electroactive and Conformal Coatings of Oxidative Chemical Vapor Deposition Polymers for Oxygen Electroreduction

2019 ◽  
Vol 1 (3) ◽  
pp. 552-560 ◽  
Author(s):  
Shayan Kaviani ◽  
Mahdi Mohammadi Ghaleni ◽  
Elham Tavakoli ◽  
Siamak Nejati
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxygen Electroreduction ◽  
Conformal Coatings

Low Dielectric Constant, High Temperature Stable Copolymer Thin Films by Room Temperature Chemical Vapor Deposition

1994 ◽  
Vol 343 ◽  
Author(s):  
Justin F. Gaynor ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Conformal Coatings

ABSTRACTPolyxylylene thin films grown by the chemical vapor deposition (CVD) process have long been utilized to achieve uniform, pinhole-free conformal coatings. They have recently been cited as possible low dielectric constant films for intermetal layers in high-speed ICs. Homopolymer films are highly crystalline and have a glass transition temperature around room temperature. We have demonstrated that room temperature copolymerization with previously untested comonomers can be achieved during the CVD process. Copolymerizing chloro-p-xylylene with perfluorooctyl methacrylate results in the dielectric constant at optical frequencies being lowered from 2.68 to 2.19. Copolymerizing p-xylylene with vinylbiphenyl resulted in films which increase the temperature at which oxidative scission occurs from 320 to 450C. Copolymerizing p-xylylene with 9-vinylanthracene resulted in a brittle, yellow film.

Self-Defensive Coating for Antibiotics Degradation-Atmospheric Pressure Chemical Vapor Deposition of Functional and Conformal Coatings for the Immobilization of Enzymes

2015 ◽  
Vol 2 (14) ◽  
pp. 1500253 ◽  
Author(s):  
Sébastien Bonot ◽  
Rodolphe Mauchauffé ◽  
Nicolas D. Boscher ◽  
Maryline Moreno-Couranjou ◽  
Henry-Michel Cauchie ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Immobilization Of Enzymes ◽  
Pressure Chemical ◽  
Conformal Coatings

Room temperature copolymerization to improve the thermal and dielectric properties of polyxylylene thin films by chemical vapor deposition

1994 ◽  
Vol 9 (12) ◽  
pp. 3125-3130 ◽  
Author(s):  
Justin F. Gaynor ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Weight Loss ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conformal Coatings

Polyxylylene thin films grown by chemical vapor deposition (CVD) have long been utilized for uniform, pinhole-free conformal coatings. Homopolymer films are highly crystalline and have a glass transition temperature around room temperature. We show room temperature copolymerization with previously untested comonomers during the CVD process. Samples were studied with wavelength dispersive analysis, FTIR, scanning variable angle ellipsometry, and x-ray diffraction. Copolymerizing chloro-p-xylylene with perfluoro-octyl methacrylate results in dielectric constants at optical frequencies as low as 2.19, compared to 2.68 for the homopolymer. Copolymerizing p-xylylene with 4-vinylbiphenyl resulted in films whose onset of weight loss in TGA measurements was 450 °C, compared to 270 °C for the homopolymer.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Coating of continuous carbon fibers with double layers by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Double Layers
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