scholarly journals Fabrication of Al2O3-Cu Nanocomposites Using Rotary Chemical Vapor Deposition and Spark Plasma Sintering

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Jianfeng Zhang ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Spark Plasma Sintering ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cu Nanoparticles ◽  
Organic Precursor ◽  
Beneficial Effects ◽  
Plasma Sintering ◽  
Vapor Deposition Technique ◽  
Spark Plasma

A two-step rotary chemical vapor deposition technique was developed to uniformly mix Cu nanoparticles with theγAl2O3powders, and then the as-obtained powders were consolidated to Al2O3-Cu nanocomposites by spark plasma sintering. In the RCVD process, the metal-organic precursor of copper dipivaloylmethanate (Cu(DPM)2) reacted with O2and then was reduced by H2in order to erase the contamination of carbon. At 1473 K, the relative density of Al2O3-Cu increased with increasingCCuand the maximum value was 97.7% atCCu= 5.2 mass%. The maximum fracture toughness of Al2O3-Cu was 4.1 MPa m1/2atCCu= 3.8 mass%, and 1 MPa m1/2higher than that of monolithic Al2O3, validating the beneficial effects of Cu nanoparticles.

Consolidation of SiC Powder Coated with SiO2 Nanolayer by Spark Plasma Sintering

2014 ◽  
Vol 616 ◽  
pp. 32-36 ◽  
Author(s):  
Zhen Hua He ◽  
Hirokazu Katsui ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Relative Density ◽  
Spark Plasma Sintering ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Sintering ◽  
Spark Plasma

Silica (SiO2) nanolayer was coated on silicon carbide (SiC) powder by rotary chemical vapor deposition (RCVD). The SiC/SiO2 composite were consolidated by spark plasma sintering (SPS) at 1923 K using the SiO2 coated SiC powder. The relative density and hardness of the SiC/SiO2 composites increased with increasing SiO2 content, and were 97% and 17 GPa, respectively, at SiO2 content of 22 mass%. The relative density and hardness of a composite consolidated using the mixture powders of SiC and SiO2 (22 mass%) at 1923 K were 81% and 8 GPa, respectively.

Silicon Carbide Coating on Diamond Powder by Rotary Chemical Vapor Deposition

2012 ◽  
Vol 508 ◽  
pp. 65-68 ◽  
Author(s):  
Hirokazu Katsui ◽  
Zhen Hua He ◽  
Takashi Goto
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Powder ◽  
Absorption Bands ◽  
Diamond Particles ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Diamond Powders

Silicon Carbide (SiC) Layers Were Prepared on Diamond Powders by Rotary Chemical Vapor Deposition (RCVD) Using C6H18Si2as a Precursor. Diamond Particles with Cleavable and Sharp Configurations Were Covered with Smooth Layers by RCVD. Infrared Absorption Bands at around 800 and 1000 cm-1Attributed to Si-C Bonding Were Observed in FTIR Spectrum on the Diamond Powders. The Pellet Sample Sintered by Spark Plasma Sintering Using the Diamond Powders Suggested that β-SiC Was Deposited on the Diamond Particles.

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

scholarly journals Impedance Spectroscopic Study of Nickel Sulfide Nanostructures Deposited by Aerosol Assisted Chemical Vapor Deposition Technique

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1105
Author(s):  
Sadia Iram ◽  
Azhar Mahmood ◽  
Muhammad Fahad Ehsan ◽  
Asad Mumtaz ◽  
Manzar Sohail ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Nickel Sulfide ◽  
Variable Temperature ◽  
Complex Impedance ◽  
Equivalent Circuit Model ◽  
Chemical Vapor ◽  
Relaxation Processes ◽  
Impedance Plot ◽  
Vapor Deposition Technique

This research aims to synthesize the Bis(di-isobutyldithiophosphinato) nickel (II) complex [Ni(iBu2PS2)] to be employed as a substrate for the deposition of nickel sulfide nanostructures, and to investigate its dielectric and impedance characteristics for applications in the electronic industry. Various analytical tools including elemental analysis, mass spectrometry, IR, and TGA were also used to further confirm the successful synthesis of the precursor. NiS nanostructures were grown on the glass substrates by employing an aerosol assisted chemical vapor deposition (AACVD) technique via successful decomposition of the synthesized complex under variable temperature conditions. XRD, SEM, TEM, and EDX methods were well applied to examine resultant nanostructures. Dielectric studies of NiS were carried out at room temperature within the 100 Hz to 5 MHz frequency range. Maxwell-Wagner model gave a complete explanation of the variation of dielectric properties along with frequency. The reason behind high dielectric constant values at low frequency was further endorsed by Koops phenomenological model. The efficient translational hopping and futile reorientation vibration caused the overdue exceptional drift of ac conductivity (σac) along with the rise in frequency. Two relaxation processes caused by grains and grain boundaries were identified from the fitting of a complex impedance plot with an equivalent circuit model (Rg Cg) (Rgb Qgb Cgb). Asymmetry and depression in the semicircle having center present lower than the impedance real axis gave solid justification of dielectric behavior that is non-Debye in nature.

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