Chemical and structural analysis of low-temperature excimer-laser annealing in indium-tin oxide sol-gel films

2019 ◽  
Vol 19 (2) ◽  
pp. 168-173 ◽  
Author(s):  
Hyuk Jin Kim ◽  
Min-Jae Maeng ◽  
J.H. Park ◽  
Min Gyu Kang ◽  
Chong Yun Kang ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Low Temperature ◽  
Excimer Laser ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Laser Annealing ◽  
Sol Gel ◽  
Excimer Laser Annealing ◽  
Sol Gel Films

Densification and crystallization of SnO2:Sb sol–gel films using excimer laser annealing

2003 ◽  
Vol 208-209 ◽  
pp. 382-387 ◽  
Author(s):  
C.S. Sandu ◽  
V.S. Teodorescu ◽  
C. Ghica ◽  
B. Canut ◽  
M.G. Blanchin ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Sol Gel ◽  
Excimer Laser Annealing ◽  
Sol Gel Films

Room temperature indium tin oxide by XeCl excimer laser annealing for flexible display

2004 ◽  
Vol 460 (1-2) ◽  
pp. 291-294 ◽  
Author(s):  
Wonsuk Chung ◽  
Michael O. Thompson ◽  
Paul Wickboldt ◽  
Daniel Toet ◽  
Paul G. Carey
Keyword(s):  
Excimer Laser ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Flexible Display ◽  
Xecl Excimer Laser

UV Photoannealing and RTP of Thin Sol-Gel Films

1996 ◽  
Vol 429 ◽  
Author(s):  
R. E.Van de Leest ◽  
F. Roozeboom
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Sol Gel ◽  
Excimer Laser Annealing ◽  
High Quality ◽  
Iron Nickel ◽  
Excimer Laser Irradiation ◽  
Alkoxide Precursor ◽  
Sol Gel Films

AbstractVarious annealing methods for sol-gel films have been investigated. Thermal, photothermal, RTP and excimer laser annealing have been used to convert sol-gel precursor films into oxidic films. RTP annealing of sol-gel films yields better results than classical thermal annealing or excimer laser irradiation. Photochemical effects during RTP annealing contribute to obtain high-quality oxide films. The various annealing methods are illustrated by the annealing of alkoxide precursor films of tantalum, iron, nickel and yttrium.

scholarly journals Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing. Dependences of Poly-Si Grain on Energy Density and Shot Number.

Shinku ◽  
2000 ◽  
Vol 43 (12) ◽  
pp. 1120-1125 ◽  
Author(s):  
Naoto MATSUO ◽  
Hisashi ABE ◽  
Naoya KAWAMOTO ◽  
Ryouhei TAGUCHI ◽  
Tomoyuki NOUDA ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Energy Density ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Shot Number

Electrical/Optical Properties of Thin Transparent Oxide Films Deposited Using DC Magnetron Sputtering

2004 ◽  
Vol 449-452 ◽  
pp. 989-992
Author(s):  
Byung Soo So ◽  
Sung Moon Kim ◽  
Young Sin Pyo ◽  
Young Hwan Kim ◽  
Jin-Ha Hwang
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Excimer Laser ◽  
Indium Tin Oxide ◽  
Laser Annealing ◽  
Dc Magnetron Sputtering ◽  
Excimer Laser Annealing ◽  
Plastic Substrates ◽  
Ito Thin Films

Amorphous indium tin oxide (ITO) thin films were grown on plastic substrates, PES (polyethersulfone) using low temperature DC magnetron sputtering. Various post-annealing techniques are attempted to optimize conductivity, transmittance, and roughness: i) conventional thermal annealing, ii) excimer laser annealing, and iii) UV irradiation. The electrical/optical properties were measured using Hall-measurement, DC 4-point resistance measurement, and UV spectrometry along with micro-structural characterization. Optimized UV treatment exhibits enhanced conductivity and smooth surface, compared to those of conventional thermal annealing and excimer laser annealing.

Ultra-Low Temperature Poly-Si Thin Film by Excimer Laser Recrystallization For Flexible Substrates

2003 ◽  
Vol 769 ◽  
Author(s):  
Sang-Myeon Han ◽  
Min-Cheol Lee ◽  
Su-Hyuk Kang ◽  
Moon-Young Shin ◽  
Min-Koo Han
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Inductively Coupled Plasma ◽  
Laser Annealing ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Plastic Substrate ◽  
Excimer Laser Annealing ◽  
Plasma Chemical Vapor Deposition ◽  
Laser Recrystallization

AbstractAn ultra-low temperature (< 200°C) polycrystalline silicon (poly-Si) film is fabricated for the plastic substrate application using inductively coupled plasma chemical vapor deposition (ICP-CVD) and excimer laser annealing. The precursor active layer is deposited using the SiH4/He mixture at 150°C (substrate). The deposited silicon film consists of crystalline component as well as hydrogenated amorphous component. The hydrogen content in the precursor layer is less than 5 at%. The grain size of the precursor active silicon film is about 200nm and it is increased up to 500nm after excimer laser irradiation.

Excimer Laser Annealing of PbZr0.4Ti0.6O3 Thin Film at Low Temperature

2006 ◽  
Vol E89-C (10) ◽  
pp. 1460-1464 ◽  
Author(s):  
W. XIANYU ◽  
H. S.-y. CHO ◽  
J. Y. KWON ◽  
H. YIN ◽  
T. NOGUCHI
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing

6.4: Crystallization of Ultra-low Temperature ITO by XeCl Excimer Laser Annealing

2002 ◽  
Vol 33 (1) ◽  
pp. 57 ◽  
Author(s):  
Wonsuk Chung ◽  
Michael O. Thompson ◽  
Paul Wickboldt ◽  
Daniel Toet ◽  
Paul G. Carey
Keyword(s):  
Low Temperature ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Xecl Excimer Laser
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