Unipolar resistive switching characteristics of W/Si 3 N 4 /Si memory devices with doped silicon bottom electrodes

2017 ◽  
Vol 17 (2) ◽  
pp. 146-151 ◽  
Author(s):  
Sungjun Kim ◽  
Byung-Gook Park
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Doped Silicon ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

scholarly journals Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

2012 ◽  
Vol 152 (17) ◽  
pp. 1630-1634 ◽  
Author(s):  
Feng Zhang ◽  
Xiaomin Li ◽  
Xiangdong Gao ◽  
Liang Wu ◽  
Fuwei Zhuge ◽  
...  
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Defect Content ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

2012 ◽  
Vol 10 (1) ◽  
pp. 013102-13105 ◽  
Author(s):  
Jianwei Zhao Jianwei Zhao ◽  
Fengjuan Liu Fengjuan Liu ◽  
Jian Sun Jian Sun ◽  
Haiqin Huang Haiqin Huang ◽  
Zuofu Hu Zuofu Hu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Resistive Switching ◽  
Low Power Consumption ◽  
Memory Devices ◽  
Bipolar Resistive Switching ◽  
Switching Characteristics

scholarly journals Memory Devices via Unipolar Resistive Switching in Symmetric Organic–Inorganic Perovskite Nanoscale Heterolayers

2020 ◽  
Vol 3 (12) ◽  
pp. 11889-11896
Author(s):  
Xianxi Yu ◽  
Tangyao Shen ◽  
Chunqin Zhu ◽  
Qi Zeng ◽  
Anran Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Inorganic Perovskite ◽  
Unipolar Resistive Switching

scholarly journals Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Geetika Khurana ◽  
Nitu Kumar ◽  
Manish Chhowalla ◽  
James F. Scott ◽  
Ram S. Katiyar
Keyword(s):  
Gold Nanoparticles ◽  
Graphene Oxide ◽  
Resistive Switching ◽  
Device Fabrication ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Resistive Switching ◽  
Au Nps ◽  
Conducting Path ◽  
Switching Characteristics

Abstract Downscaling limitations and limited write/erase cycles in conventional charge-storage based non-volatile memories stimulate the development of emerging memory devices having enhanced performance. Resistive random-access memory (RRAM) devices are recognized as the next-generation memory devices for employment in artificial intelligence and neuromorphic computing, due to their smallest cell size, high write/erase speed and endurance. Unipolar and bipolar resistive switching characteristics in graphene oxide (GO) have been extensively studied in recent years, whereas the study of non-polar and complementary switching is scarce. Here we fabricated GO-based RRAM devices with gold nanoparticles (Au Nps). Diverse types of switching behavior are observed by changing the processing methods and device geometry. Tri-layer GO-based devices illustrated non-polar resistive switching, which is a combination of unipolar and bipolar switching. Five-layer GO-based devices depicted complementary resistive switching having the lowest current values ~12 µA; and this structure is capable of resolving the sneak path issue. Both devices show good retention and endurance performance. Au Nps in tri-layer devices assisted the conducting path, whereas in five-layer devices, Au Nps layer worked as common electrodes between co-joined cells. These GO-based devices with Au Nps comprising different configuration are vital for practical applications of emerging non-volatile resistive memories.

Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory Devices

2019 ◽  
Vol 41 (3) ◽  
pp. 475-482 ◽  
Author(s):  
Yu-Ting Tsai ◽  
Ting-Chang Chang ◽  
Chao-Cheng Lin ◽  
Lan-Shin Chiang ◽  
Shih-Cheng Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Electrode Material ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Switching Characteristics

Unipolar resistive switching characteristics of room temperature grown SnO2 thin films

2009 ◽  
Vol 94 (24) ◽  
pp. 242902 ◽  
Author(s):  
Kazuki Nagashima ◽  
Takeshi Yanagida ◽  
Keisuke Oka ◽  
Tomoji Kawai
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Room Temperature ◽  
Sno2 Thin Films ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching
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