Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

2012 ◽  
Vol 10 (1) ◽  
pp. 013102-13105 ◽  
Author(s):  
Jianwei Zhao Jianwei Zhao ◽  
Fengjuan Liu Fengjuan Liu ◽  
Jian Sun Jian Sun ◽  
Haiqin Huang Haiqin Huang ◽  
Zuofu Hu Zuofu Hu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Resistive Switching ◽  
Low Power Consumption ◽  
Memory Devices ◽  
Bipolar Resistive Switching ◽  
Switching Characteristics

Research on Memristor Oriented to Resistive RAM

2013 ◽  
Vol 427-429 ◽  
pp. 974-977 ◽  
Author(s):  
Da Huang ◽  
Yu Hua Tang
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Resistive Switching ◽  
Semiconductor Industry ◽  
Low Power Consumption ◽  
Spice Model ◽  
Resistive Ram ◽  
Materials Used ◽  
Switching Characteristics

With the process of high integration, low power consumption, small size in the semiconductor industry, resistive RAM has drawn increasing attention. The discovery of the memristor brings much more to this study. These researches focus on resistive switching characteristics of different materials and analysis of resistive switching mechanisms. We discuss the resistive switching mechanisms of different materials in this paper and analyze different materials used in resistive RAM. Finally, simulation of memristor Spice model oriented to resistive RAM has been finished

scholarly journals Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Geetika Khurana ◽  
Nitu Kumar ◽  
Manish Chhowalla ◽  
James F. Scott ◽  
Ram S. Katiyar
Keyword(s):  
Gold Nanoparticles ◽  
Graphene Oxide ◽  
Resistive Switching ◽  
Device Fabrication ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Resistive Switching ◽  
Au Nps ◽  
Conducting Path ◽  
Switching Characteristics

Abstract Downscaling limitations and limited write/erase cycles in conventional charge-storage based non-volatile memories stimulate the development of emerging memory devices having enhanced performance. Resistive random-access memory (RRAM) devices are recognized as the next-generation memory devices for employment in artificial intelligence and neuromorphic computing, due to their smallest cell size, high write/erase speed and endurance. Unipolar and bipolar resistive switching characteristics in graphene oxide (GO) have been extensively studied in recent years, whereas the study of non-polar and complementary switching is scarce. Here we fabricated GO-based RRAM devices with gold nanoparticles (Au Nps). Diverse types of switching behavior are observed by changing the processing methods and device geometry. Tri-layer GO-based devices illustrated non-polar resistive switching, which is a combination of unipolar and bipolar switching. Five-layer GO-based devices depicted complementary resistive switching having the lowest current values ~12 µA; and this structure is capable of resolving the sneak path issue. Both devices show good retention and endurance performance. Au Nps in tri-layer devices assisted the conducting path, whereas in five-layer devices, Au Nps layer worked as common electrodes between co-joined cells. These GO-based devices with Au Nps comprising different configuration are vital for practical applications of emerging non-volatile resistive memories.

scholarly journals Localised nanoscale resistive switching in GaP thin films with low power consumption

2017 ◽  
Vol 5 (8) ◽  
pp. 2153-2159 ◽  
Author(s):  
Fran Kurnia ◽  
Chunli Liu ◽  
Guangqing Liu ◽  
Rama K. Vasudevan ◽  
Sang Mo Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Consumption ◽  
Low Power ◽  
Grain Boundaries ◽  
Resistive Switching ◽  
Low Power Consumption ◽  
Conductive Afm ◽  
Switching Mechanism ◽  
Switching Behaviour

Resistive switching behaviour is observed for GaP thin films. Conductive AFM and FORC-IV measurements show that the current is localised at grain boundaries. The switching mechanism is driven by Ga migration along the grain boundaries.

The effect of high resistivity AlOδ layer on low-power consumption of TaOx based resistive switching memory

Vacuum ◽  
2020 ◽  
Vol 174 ◽  
pp. 109186
Author(s):  
Jin Shi Zhao ◽  
Chen Wang ◽  
Yu Yan ◽  
Yu Ting Chen ◽  
Wen Tao Sun ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Resistive Switching ◽  
High Resistivity ◽  
Low Power Consumption ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Understanding rectifying and nonlinear bipolar resistive switching characteristics in Ni/SiNx/p-Si memory devices

RSC Advances ◽  
2017 ◽  
Vol 7 (29) ◽  
pp. 17882-17888 ◽  
Author(s):  
Sungjun Kim ◽  
Yao-Feng Chang ◽  
Byung-Gook Park
Keyword(s):  
Resistive Switching ◽  
The Self ◽  
Memory Devices ◽  
Resistive Memory ◽  
Bipolar Resistive Switching ◽  
Switching Characteristics

Two resistive memory devices were prepared with different doping concentrations in the silicon bottom electrodes to explore the self-rectifying and nonlinear resistive switching characteristics of Ni/SiNx/p-Si devices.

Optimal design of a high homogeneous and small-size shim coil for atomic spin gyroscope based on 0-1 linear programming

2020 ◽  
Vol 64 (1-4) ◽  
pp. 165-172
Author(s):  
Dongge Deng ◽  
Mingzhi Zhu ◽  
Qiang Shu ◽  
Baoxu Wang ◽  
Fei Yang
Keyword(s):  
Linear Programming ◽  
Power Consumption ◽  
Low Power ◽  
Optimization Design ◽  
Structural Parameters ◽  
Axial Position ◽  
Low Power Consumption ◽  
Optimal Method ◽  
Atomic Spin ◽  
Shim Coil

It is necessary to develop a high homogeneous, low power consumption, high frequency and small-size shim coil for high precision and low-cost atomic spin gyroscope (ASG). To provide the shim coil, a multi-objective optimization design method is proposed. All structural parameters including the wire diameter are optimized. In addition to the homogeneity, the size of optimized coil, especially the axial position and winding number, is restricted to develop the small-size shim coil with low power consumption. The 0-1 linear programming is adopted in the optimal model to conveniently describe winding distributions. The branch and bound algorithm is used to solve this model. Theoretical optimization results show that the homogeneity of the optimized shim coil is several orders of magnitudes better than the same-size solenoid. A simulation experiment is also conducted. Experimental results show that optimization results are verified, and power consumption of the optimized coil is about half of the solenoid when providing the same uniform magnetic field. This indicates that the proposed optimal method is feasible to develop shim coil for ASG.

An Ultra-low Power Consumption MAC Protocol Complied with IEEE 802.15.4/4e for Wireless Smart Utility Networks

2016 ◽  
Vol 136 (11) ◽  
pp. 1555-1566 ◽  
Author(s):  
Jun Fujiwara ◽  
Hiroshi Harada ◽  
Takuya Kawata ◽  
Kentaro Sakamoto ◽  
Sota Tsuchiya ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Ieee 802.15.4 ◽  
Mac Protocol ◽  
Low Power Consumption ◽  
Ultra Low Power
Sign in / Sign up

Export Citation Format

Share Document