Investigating gate metal induced reduction of surface donor density in GaN/AlGaN/GaN heterostructure by electroreflectance spectroscopy

2015 ◽  
Vol 15 (11) ◽  
pp. 1478-1481
Author(s):  
Jong Hoon Shin ◽  
Kwang-Choong Kim ◽  
Kyu Sang Kim
Keyword(s):  
Donor Density ◽  
Gan Heterostructure ◽  
Electroreflectance Spectroscopy ◽  
Surface Donor

Impact of Gate Metal on Surface States Distribution and Effective Surface Barrier Height in AlGaN/GaN Heterostructures

2013 ◽  
Vol 1538 ◽  
pp. 335-340 ◽  
Author(s):  
Nitin Goyal ◽  
Tor A. Fjeldly
Keyword(s):  
Barrier Height ◽  
Surface States ◽  
Surface Barrier ◽  
Metal Gate ◽  
Effective Surface ◽  
Barrier Layers ◽  
Donor Density ◽  
Model Predictions ◽  
Surface Donor ◽  
Bare Surface

ABSTRACTA physics based model is presented to describe the surface donor density distribution for metal/AlGaN/GaN structures. This model partly relies on experimental observations to describe the reduction that takes place in surface donor density when the metal gate is deposited. This new model is based on our previous work on the bare surface barrier height for both unrelaxed and partially relaxed barrier layers. The model predictions are consistent with reported experimental data.

Energy difference between electron subbands in AlInN∕GaInN quantum wells studied by contactless electroreflectance spectroscopy

2006 ◽  
Vol 89 (25) ◽  
pp. 251908 ◽  
Author(s):  
M. Motyka ◽  
R. Kudrawiec ◽  
G. Cywiński ◽  
M. Siekacz ◽  
C. Skierbiszewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Energy Difference ◽  
Electroreflectance Spectroscopy
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