Energy difference between electron subbands in AlInN∕GaInN quantum wells studied by contactless electroreflectance spectroscopy

2006 ◽  
Vol 89 (25) ◽  
pp. 251908 ◽  
Author(s):  
M. Motyka ◽  
R. Kudrawiec ◽  
G. Cywiński ◽  
M. Siekacz ◽  
C. Skierbiszewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Energy Difference ◽  
Electroreflectance Spectroscopy

A Purely Spectroscopic Technique for Determining Energy Band Offsets in Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Koteies
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Accurate Determination ◽  
Energy Difference ◽  
Spectroscopic Technique ◽  
Band Offsets ◽  
Band Energy ◽  
Semiconductor Quantum Wells ◽  
Sensitive Function

ABSTRACTWe have developed a novel experimental technique for accurately determining band offsets in semiconductor quantum wells (QW). It is based on the fact that the ground state heavy- hole (HH) band energy is more sensitive to the depth of the valence band well than the light-hole (LH) band energy. Further, it is well known that as a function of the well width, Lz, the energy difference between the LH and HH excitons in a lattice matched, unstrained QW system experiences a maximum. Calculations show that the position, and more importantly, the magnitude of this maximum is a sensitive function of the valence band offset, Qy, which determines the depth of the valence band well. By fitting experimentally measured LH-HH splittings as a function of Lz, an accurate determination of band offsets can be derived. We further reduce the experimental uncertainty by plotting LH-HH as a function of HH energy (which is a function of Lz ) rather than Lz itself, since then all of the relevant parameters can be precisely determined from absorption spectroscopy alone. Using this technique, we have derived the conduction band offsets for several material systems and, where a consensus has developed, have obtained values in good agreement with other determinations.

Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
R. Kudrawiec ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interband Transitions ◽  
Single Quantum ◽  
Electroreflectance Spectroscopy

Electroreflectance spectroscopy on III-N quantum wells

2009 ◽  
Vol 206 (5) ◽  
pp. 816-820 ◽  
Author(s):  
Aneta Drabinska ◽  
Jacek M. Baranowski ◽  
Krzysztof Pakula ◽  
Piotr Caban ◽  
Wlodzimierz Strupinski
Keyword(s):  
Quantum Wells ◽  
Electroreflectance Spectroscopy

Band gap discontinuity in Ga0.9In0.1N0.027As0.973−xSbx∕GaAs single quantum wells with 0⩽x<0.06 studied by contactless electroreflectance spectroscopy

2006 ◽  
Vol 88 (22) ◽  
pp. 221113 ◽  
Author(s):  
R. Kudrawiec ◽  
M. Motyka ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Single Quantum ◽  
Electroreflectance Spectroscopy

scholarly journals Infra-Red Tunneling Absorption in Semiconductor Double Quantum Wells in Tilted Magnetic Fields

1996 ◽  
Vol 450 ◽  
Author(s):  
S. K. Lyo
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Linear Response ◽  
Resonance Energy ◽  
Linear Response Theory ◽  
Energy Difference ◽  
Double Quantum ◽  
Absorption Intensity ◽  
Double Quantum Well ◽  
Infra Red

ABSTRACTUsing a linear response theory, interwell-tunneling absorption of infra-red photons is calculated in a double-quantum-well structure with a wide center barrier in tilted magnetic fields. Tunneling occurs between the ground sublevels of the two quantum wells, with an energy difference that is tunable. The absorption intensity depends strongly on the temperature and the carrier densities. The resonance width is narrow even at high temperatures due to the two-dimensional phase restriction for tunneling. In magnetic fields, both the in-plane and perpendicular components of the field sensitively control and tune the absorption lineshape in very different ways, affecting the absorption threshold, the resonance energy of absorption, and the linewidth.

Contactless electroreflectance spectroscopy of ZnO/ZnMgO quantum wells: Optical transitions and Fabry-Perot features

2015 ◽  
Vol 212 (4) ◽  
pp. 780-784 ◽  
Author(s):  
M. Wełna ◽  
R. Kudrawiec ◽  
J. Misiewicz ◽  
M. Yano ◽  
K. Koike ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Transitions ◽  
Fabry Perot ◽  
Electroreflectance Spectroscopy

COMPREHENSIVE STUDY OF SPIN-FLIP EXCITATIONS IN CdZnTe/CdZnMnTe QUANTUM WELLS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1610-1614
Author(s):  
DAISUKE FUKUOKA ◽  
KOUSHIRO ARAHARA ◽  
TAKAAKI KOYAMA ◽  
NAOKI TANAKA ◽  
KENICHI OTO ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Electron Spin ◽  
Energy Difference ◽  
Magnetic Field Direction ◽  
Kerr Rotation ◽  
Spin Configuration ◽  
Spin Flip ◽  
The Magnetic Field

Spin-flip excitations in non-doped Cd 0.93 Zn 0.07 Te/Cd 0.48 Zn 0.04 Mn 0.48 Te quantum wells have been comprehensively studied by spin-flip Raman scattering (SFRS) spectroscopy and time-resolved Kerr rotation (TRKR) spectroscopy. In 4 nm quantum well, two spin-flip Raman peaks were observed in addition to the multiple Mn 2+ spin-flip scatterings. The spin-flip energies are isotropic against the magnetic field direction and well described by modified Brillouin functions. Based on the circumstantial analysis, they are assigned to the spin-flip of residual electrons and the electron spin-flip in the localized exciton, respectively, even though the large energy difference between the two electron spin-flip processes is a puzzle. While, in 9 nm quantum well a strange spin-flip excitation was observed together with a very weak Mn 2+ spin-flip scattering. The spin-flip energy changed strangely up to the magnetic field 4T, and then linearly increased with field (| g *|=1.15). A high-resolution TRKR spectroscopy revealed an unusual temperature dependence, which resembled "softening mode" of spin resonance observed in p-doped ferromagnetic CdMnTe quantum wells. However, these behaviors are well understood by an "inverted spin configuration", which results from a negative g*-factor and a very weak s-d interaction between the electrons and the manganese ions in the barrier.

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