Structural and nanomechanical properties of a-plane ZnO thin films deposited under different oxygen partial pressures

2012 ◽  
Vol 12 (3) ◽  
pp. 849-853 ◽  
Author(s):  
Sheng-Rui Jian ◽  
Hou-Guang Chen ◽  
Guo-Ju Chen ◽  
Jason S.C. Jang ◽  
Jenh-Yih Juang
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Nanomechanical Properties ◽  
Partial Pressures

scholarly journals Surface Morphological and Nanomechanical Properties of PLD-Derived ZnO Thin Films

2008 ◽  
Vol 3 (5) ◽  
pp. 186-193 ◽  
Author(s):  
Sheng-Rui Jian ◽  
I-Ju Teng ◽  
Ping-Feng Yang ◽  
Yi-Shao Lai ◽  
Jian-Ming Lu ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Nanomechanical Properties

Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

The optical, electrical, and nanomechanical properties of ZnO thin films

Optik ◽  
2015 ◽  
Vol 126 (21) ◽  
pp. 3263-3266 ◽  
Author(s):  
Jiun-Yi Tseng ◽  
Yuan-Tsung Chen ◽  
C.J. Lin ◽  
Wen-Jen Liu ◽  
C.C. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Nanomechanical Properties

scholarly journals Defects Induced Room Temperature Ferromagnetism in ZnO Thin Films

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Xiao Zhang ◽  
Wei Zhang ◽  
Xinghua Zhang ◽  
Xuewen Xu ◽  
Fanbin Meng ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Room Temperature ◽  
Magnetic Order ◽  
Room Temperature Ferromagnetism ◽  
Electronic Configuration ◽  
Zno Thin Films ◽  
Argon Gas ◽  
Pure Argon ◽  
Partial Pressures

Polycrystalline ZnO thin films are prepared by the co-sputtering method under different oxygen partial pressures. Films deposited in pure argon gas exhibit ferromagnetism, whereas other films deposited under different oxygen partial pressures are diamagnetism. XPS results show the presence of Zn interstitial and oxygen vacancy in all of samples. Further analysis indicates that Zn interstitial may play an important role in triggering magnetic order on the undoped ZnO thin films by inducing an alteration of electronic configuration.

Rapid thermal annealing effects on the structural and nanomechanical properties of Ga-doped ZnO thin films

2013 ◽  
Vol 231 ◽  
pp. 176-179 ◽  
Author(s):  
S.-R. Jian ◽  
G.-J. Chen ◽  
S.-K. Wang ◽  
T.-C. Lin ◽  
J.S.-C. Jang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Zno Thin Films ◽  
Nanomechanical Properties ◽  
Annealing Effects ◽  
Doped Zno

XPS Analysis of ZnO Thin Films Obtained by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6293-6296 ◽  
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Yuan Bin Su ◽  
Shu Lian Yang ◽  
Qin Qin Wei
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

Highly c-axis oriented ZnO thin films were deposited on n-Si (111) substrate at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), Atomic force microscopy (AFM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. X-ray photoelectron spectroscopy (XPS) was used to analyze relationships between chemical shifts of XPS energy spectra and stoichiometric ratios of ZnO thin films, and quantitative relationships between content of Zn, O and oxygen partial pressures. An optimal crystallized and stoichiometric ZnO thin film was observed at the oxygen partial pressure of 6.5Pa.

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