Internal stress and opto-electronic properties of ZnO thin films deposited by reactive sputtering in various oxygen partial pressures

2017 ◽  
Vol 122 (15) ◽  
pp. 155306 ◽  
Author(s):  
Romain Tuyaerts ◽  
Olivier Poncelet ◽  
Jean-Pierre Raskin ◽  
Joris Proost
2016 ◽  
Vol 169 ◽  
pp. 1-4 ◽  
Author(s):  
Vinoth Kumar Jayaraman ◽  
Yasuhiro Matsumoto Kuwabara ◽  
Arturo Maldonado Álvarez ◽  
María de la luz Olvera Amador

2012 ◽  
Vol 12 (3) ◽  
pp. 849-853 ◽  
Author(s):  
Sheng-Rui Jian ◽  
Hou-Guang Chen ◽  
Guo-Ju Chen ◽  
Jason S.C. Jang ◽  
Jenh-Yih Juang

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.


2015 ◽  
Vol 89 (10) ◽  
pp. 1013-1023 ◽  
Author(s):  
N. Kıcır ◽  
O. M. Ozkendir ◽  
A. H. Farha ◽  
F. Kırmızıgül ◽  
T. Tuken ◽  
...  

2004 ◽  
Vol 4 (1) ◽  
pp. 147-156 ◽  
Author(s):  
Eugenia Mirica ◽  
Glen Kowach ◽  
Paul Evans ◽  
Henry Du

2010 ◽  
Vol 107 (12) ◽  
pp. 123522 ◽  
Author(s):  
Julien Petersen ◽  
Christelle Brimont ◽  
Mathieu Gallart ◽  
Guy Schmerber ◽  
Pierre Gilliot ◽  
...  

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