Defects Induced Room Temperature Ferromagnetism in ZnO Thin Films
2014 ◽
Vol 2014
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pp. 1-6
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Polycrystalline ZnO thin films are prepared by the co-sputtering method under different oxygen partial pressures. Films deposited in pure argon gas exhibit ferromagnetism, whereas other films deposited under different oxygen partial pressures are diamagnetism. XPS results show the presence of Zn interstitial and oxygen vacancy in all of samples. Further analysis indicates that Zn interstitial may play an important role in triggering magnetic order on the undoped ZnO thin films by inducing an alteration of electronic configuration.
2013 ◽
Vol 231
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pp. 307-310
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2010 ◽
Vol 46
(6)
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pp. 2152-2155
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Keyword(s):
2008 ◽
Vol 37
(5)
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pp. 831-834
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Keyword(s):
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