Fitting Cells Into a Narrow $V_{T}$ Interval: Physical Constraints Along the Lifetime of an Extremely Scaled NAND Flash Memory Array

2015 ◽  
Vol 62 (5) ◽  
pp. 1491-1497 ◽  
Author(s):  
Giovanni Maria Paolucci ◽  
Christian Monzio Compagnoni ◽  
Alessandro S. Spinelli ◽  
Andrea L. Lacaita ◽  
Akira Goda
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Physical Constraints ◽  
Memory Array

Novel Three Dimensional (3D) NAND Flash Memory Array Having Tied Bit-line and Ground Select Transistor (TiGer)

2012 ◽  
Vol E95.C (5) ◽  
pp. 837-841 ◽  
Author(s):  
Se Hwan PARK ◽  
Yoon KIM ◽  
Wandong KIM ◽  
Joo Yun SEO ◽  
Hyungjin KIM ◽  
...  
Keyword(s):  
Flash Memory ◽  
Three Dimensional ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Memory Array

Arch NAND Flash Memory Array With Improved Virtual Source/Drain Performance

2010 ◽  
Vol 31 (12) ◽  
pp. 1374-1376 ◽  
Author(s):  
Wandong Kim ◽  
Jung Hoon Lee ◽  
Jang-Gn Yun ◽  
Seongjae Cho ◽  
Dong-Hua Li ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Virtual Source ◽  
Nand Flash Memory ◽  
Memory Array

DIBL-Induced Program Disturb Characteristics in 32-nm NAND Flash Memory Array

2011 ◽  
Vol 58 (10) ◽  
pp. 3626-3629 ◽  
Author(s):  
Myounggon Kang ◽  
Wookghee Hahn ◽  
Il Han Park ◽  
Juyoung Park ◽  
Youngsun Song ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Memory Array

Word Line Defect Localization Methods in 2D NAND Flash

2020 ◽  
Author(s):  
Chung-Huan Chang ◽  
Pei-Ning Hsu ◽  
Yu-Min Chung ◽  
Nan-Tzu Lian ◽  
Ta-Hone Yang ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Resistance Change ◽  
Memory Array ◽  
Defect Site ◽  
Defect Profile ◽  
Defect Localization ◽  
Induce Resistance ◽  
Movement Function

Abstract In this work, two analysis methods for word line (WL) defect localization in NAND flash memory array are presented. One is to use the Emission Microscope (EMMI) and Optical Beam Induced Resistance Change (OBIRCH) to analyze the device through backside, which has no risk of damage during sample preparation. Depending on the I-V characteristics of defects, different analysis tools can be applied. The second method is to analyze a device defect location that is hard to detect through backside analysis. The precise defect site can be localized by Electron Beam Induce Resistance Change (EBIRCH) [1,2], and the defect profile can be observed. The large memory array in NAND flash structure leads to the wide sample movement during EBIRCH analysis. The sub-stage movement function used successfully solves this problem.

Operational method of a ferroelectric (Fe)-NAND flash memory array

2009 ◽  
Vol 24 (10) ◽  
pp. 105029 ◽  
Author(s):  
Shouyu Wang ◽  
Mitue Takahashi ◽  
Qiu-Hong Li ◽  
Ken Takeuchi ◽  
Shigeki Sakai
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Operational Method ◽  
Nand Flash Memory ◽  
Memory Array
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