scholarly journals CoPt/TiN films nanopatterned by RF plasma etching towards dot-patterned magnetic media

2018 ◽  
Vol 435 ◽  
pp. 31-38 ◽  
Author(s):  
János Szívós ◽  
Szilárd Pothorszky ◽  
Jan Soltys ◽  
Miklós Serényi ◽  
Hongyu An ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Rf Plasma ◽  
Magnetic Media ◽  
Tin Films

Oxide Growth of Tin Films by Modified rf Plasma Oxidation Method

1980 ◽  
Vol 19 (8) ◽  
pp. 1566-1566
Author(s):  
Nobuyuki Takahashi ◽  
Osamu Yokoyama ◽  
Seizo Morita ◽  
Nobuo Mikoshiba
Keyword(s):  
Rf Plasma ◽  
Oxide Growth ◽  
Plasma Oxidation ◽  
Oxidation Method ◽  
Tin Films

Creation of Slow Traps in MOS Capacitors furing RF Plasma Etching

2005 ◽  
Author(s):  
P.G. Tanner ◽  
S. Dimitrijev ◽  
Y.T. Yeow ◽  
H.B. Harrison
Keyword(s):  
Plasma Etching ◽  
Rf Plasma ◽  
Mos Capacitors

A Spectroscopic Study of the Conditions Required for Plasma Etching of Aluminium in BCl3 and Cl2 Plasmas

1987 ◽  
Vol 98 ◽  
Author(s):  
J. A. Cairns ◽  
R. Smailes ◽  
D. C. W. Blaikley ◽  
P. M. Banks ◽  
G. Hancock ◽  
...  
Keyword(s):  
Steady State ◽  
Plasma Etching ◽  
Ground State ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Plasma Discharge ◽  
Rf Plasma ◽  
Rf Plasma Discharge ◽  
State Models

ABSTRACTOptical Emission Spectroscopy (OES) with argon actinometry has been used to study the influence of machine parameters on the composition of a BCl3 RF plasma discharge in the absence and presence of aluminium. Two steady state models are proposed to account for the appearance of the various species seen, and to explain their relative abundances in response to changes in power and pressure. The validity of the actinometric technique for measuring relative changes in ground state concentrations is discussed also.

Study of self-masking nanostructuring of boron doped diamond films by RF plasma etching

Vacuum ◽  
2019 ◽  
Vol 170 ◽  
pp. 108954 ◽  
Author(s):  
Marian Marton ◽  
Mario Ritomsky ◽  
Pavol Michniak ◽  
Miroslav Behul ◽  
Vlastimil Rehacek ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Diamond Films ◽  
Rf Plasma ◽  
Boron Doped Diamond ◽  
Boron Doped

Integrated, Dual-Function Remote Plasma-Enhanced Processing Applied to Low Damage SiO2 Etching and Removal of C-F Polymer Residues

1992 ◽  
Vol 282 ◽  
Author(s):  
T. Yasuda ◽  
G. Lucovsky
Keyword(s):  
Low Temperature ◽  
Plasma Etching ◽  
Etch Rate ◽  
Low Energy ◽  
Rf Plasma ◽  
Dual Function ◽  
Homoepitaxial Growth ◽  
Plasma Excitation ◽  
A New Technique

ABSTRACTWe report a dual-function chamber integrating (a) remote RF plasma-enhanced etching of SiO2 layers on Si(100) surfaces with low energy, <100 eV, ion bombardment and (b) in-situ removal of polymeric C-F residues that are formed on the exposed Si surfaces. Using direct plasma excitation of He and downstream introduction of CF4, an SiO2 etch rate of ̃5 nm/min was obtained at a CF4 partial pressure as low as 0.25 mTorr. An exposure to atomic-H at a substrate temperature of 250°C was effective in removing polymeric residues from the Si surface, while an exposure to reactive O-species was less effective. We achieved a low-temperature, ̃300°C, homoepitaxial growth of Si on the Si(100) surface that was subjected to plasma etching followed by an exposure to atomic-H. The electrical damage of the processed Si surfaces was evaluated by a new technique, where a device-quality SiO2 film was deposited on this surface by remote PECVD and the C-V characteristics of the MOS structure were measured.

Gas Plasma Treatment of Sputtered Carbon Thin Film and Enhancement of its Properties

1988 ◽  
Vol 140 ◽  
Author(s):  
J.P. Sharma ◽  
P.B. Narayan ◽  
A.S. Brar
Keyword(s):  
Plasma Treatment ◽  
Plasma Etching ◽  
Carbon Layer ◽  
Magnetic Media ◽  
Ion Diffusion ◽  
Lubricating Film ◽  
Gas Plasma ◽  
Lubricating Layer ◽  
The Media ◽  
Frictional Instability

AbstractIn magnetic recording, the metallic magnetic media are protected from corrosion and wear by a thin sputtered carbon layer. The latter also acts as a self-lubricating film during the interaction of the media with the ceramic read \write head pad material. Since the surface energy of carbon is high, it tends to absorb and chemisorb environmental constituents such as oxygen, nitrogen, water vapor and hydrocarbons. These could then react with the head\media interface and form heterogeneous layers of “frictional polymers”. These changes in carbon lead to frictional instability and friction build-up. Low temperature gas plasma treatment of sputtered carbon layer was found to improve the surface properties and the frictional instability problems. Use of a mixture of argon and carbon tetrafluoride gases led to the formation of a very thin self-lubricating layer, probably a fluorocarbon. The surface also becomes smooth. This is because of thecombined reaction of chemical reaction, ion-diffusion, ion-penetration and plasma etching. This reaction product was found to be prominently present at the grain boundaries and other morphological inhomogeneities, thereby strengthening the weak areas and improving the tribo-performance of the media.

Fractal-Like Structures Present in Hydrogenated Amorphous and Microcrystalline Silicon

1989 ◽  
Vol 164 ◽  
Author(s):  
M.J. Geerts ◽  
R.C. van Oort ◽  
J.C. van den Heuvel
Keyword(s):  
Plasma Etching ◽  
Hydrogen Plasma ◽  
Structural Disorder ◽  
Rf Plasma ◽  
Microcrystalline Silicon ◽  
Nmr Studies ◽  
Typical Size ◽  
Small Crystals ◽  
Hydrogenated Amorphous ◽  
Closed Network

AbstractIn hydrogenated amorphous silicon NMR studies indicate a twophase structural inhomogenity. Hydrogenated microcrystalline films consist of small crystals with a typical size of 100 Å, embedded in an amorphous web. A hydrogen rf plasma is able to etch both type of films, but with different etch rates. The more crystalline parts of a film are etched more slowly, which makes hydrogen plasma etching a technique that can reveal structural inhomogenities and differences in structural disorder as present, both in amorphous and in microcrystalline silicon films.Amorphous and microcrystalline films were etched and fractal-like structures were visible when using a SEM at a magnification of 20000 times. In microcrystalline films the fractals form a closed network. The number and typical size of the fractals present in amorphous films can be influenced by the conditions during the deposition.

Etching of polymers in microwave/radio-frequency O2–CF4 plasma

1991 ◽  
Vol 69 (3-4) ◽  
pp. 202-206 ◽  
Author(s):  
B. Lamontagne ◽  
O. M. Küttel ◽  
M. R. Wertheimer
Keyword(s):  
Radio Frequency ◽  
Plasma Etching ◽  
Etch Rate ◽  
Marked Effect ◽  
Polymer Structure ◽  
Rf Plasma ◽  
Self Bias ◽  
Microwave Radio ◽  
Commercial Polymers ◽  
Second Peak

We have studied O2–CF4 plasma etching of commercial polymers, particularly KaptonR polyimide, using a reactor in which the plasma can be excited by radio-frequency (rf, 13.56 MHz), microwave power (MW, 2.45 GHz), or mixed frequency (MW/rf) excitation. For the case of rf plasma etching of polyimide, a marked effect of dc self-bias voltage Vb on the etch rate R has been observed; Vb is found to vary systematically with pressure and with CF4 concentration in the etch gas, [CF4]. Beside the well-documented maximum in R at low-[CF4] values, the measurement of ion flux allows us to attribute a second peak in R (near [CF4] = 65%) to ion bombardment. We also report observations regarding the dependence of R on polymer structure.

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