scholarly journals Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C

2016 ◽  
Vol 378 ◽  
pp. 301-307 ◽  
Author(s):  
Xiao Deng ◽  
Pradeep Namboodiri ◽  
Kai Li ◽  
Xiqiao Wang ◽  
Gheorghe Stan ◽  
...  
Keyword(s):  
Silicon Epitaxy

Low-Pressure Silicon Epitaxy

1982 ◽  
Vol 17 (2) ◽  
pp. 121-127
Author(s):  
E. Krullmann ◽  
W.L. Engl
Keyword(s):  
Low Pressure ◽  
Silicon Epitaxy

Low temperature silicon epitaxy by photo- and plasma-CVD

1988 ◽  
Author(s):  
A. Yamada ◽  
A. Satoh ◽  
M. Konagai ◽  
K. Takahashi
Keyword(s):  
Low Temperature ◽  
Plasma Cvd ◽  
Silicon Epitaxy

Optimization of deposition uniformity during silicon epitaxy in deep trenches

2019 ◽  
Vol 34 (2) ◽  
pp. 024001 ◽  
Author(s):  
Alexander Segal ◽  
Eugene Yakovlev ◽  
Denis Bazarevskiy ◽  
Roman Talalaev ◽  
Hocine Ziad ◽  
...  
Keyword(s):  
Silicon Epitaxy ◽  
Deposition Uniformity

ChemInform Abstract: Mechanism of Boron Incorporation During Silicon Epitaxy by Means of Chemical Vapor Deposition.

ChemInform ◽  
2010 ◽  
Vol 27 (26) ◽  
pp. no-no
Author(s):  
H. KUEHNE ◽  
A. FISCHER ◽  
M. C. OEZTUERK ◽  
M. K. SANGANERIA
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Epitaxy

Process control of lateral autodoping in silicon epitaxy by measuring the sheet resistance

1988 ◽  
Vol 23 (10-11) ◽  
pp. 1323-1330 ◽  
Author(s):  
H. Kühne ◽  
R. Barth ◽  
W. Malze ◽  
H. Königsdörfer
Keyword(s):  
Process Control ◽  
Sheet Resistance ◽  
Silicon Epitaxy

Optimization of Process Conditions for Selective Silicon Epitaxy Using Disilane, Hydrogen, and Chlorine

1997 ◽  
Vol 144 (9) ◽  
pp. 3309-3315 ◽  
Author(s):  
Patricia A. O'Neil ◽  
Mehmet C. Öztürk ◽  
Katherine E. Violette ◽  
Dale Batchelor ◽  
Kim Christensen ◽  
...  
Keyword(s):  
Process Conditions ◽  
Silicon Epitaxy
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