Process control of lateral autodoping in silicon epitaxy by measuring the sheet resistance

H. Kühne; R. Barth; W. Malze; H. Königsdörfer

doi:10.1002/crat.2170231022

Process control of lateral autodoping in silicon epitaxy by measuring the sheet resistance

Crystal Research and Technology ◽

10.1002/crat.2170231022 ◽

1988 ◽

Vol 23 (10-11) ◽

pp. 1323-1330 ◽

Cited By ~ 1

Author(s):

H. Kühne ◽

R. Barth ◽

W. Malze ◽

H. Königsdörfer

Keyword(s):

Process Control ◽

Sheet Resistance ◽

Silicon Epitaxy

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Doping process control in silicon epitaxy (III). Realization of optimum control function

Crystal Research and Technology ◽

10.1002/crat.2170200716 ◽

1985 ◽

Vol 20 (7) ◽

pp. 943-949

Author(s):

F. Richter ◽

G. Kósza ◽

R. Sperling ◽

P. Valkó

Keyword(s):

Process Control ◽

Control Function ◽

Optimum Control ◽

Silicon Epitaxy

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Modeling the influence of arsenic autodoping on the sheet resistance of epitaxial silicon films and its application to statistical process control (SPC)

IEEE Transactions on Semiconductor Manufacturing ◽

10.1109/tsm.2003.808476 ◽

2003 ◽

Vol 16 (1) ◽

pp. 68-75 ◽

Cited By ~ 3

Author(s):

V.M. Torres

Keyword(s):

Process Control ◽

Statistical Process Control ◽

Sheet Resistance ◽

Silicon Films ◽

Epitaxial Silicon ◽

Statistical Process

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Wafer Characterization of an Epi Reactor Using Sheet Resistance Mapping

MRS Proceedings ◽

10.1557/proc-71-113 ◽

1986 ◽

Vol 71 ◽

Author(s):

Walter H. Johnson ◽

W. Andrew Keenan ◽

Alan K. Smith

Keyword(s):

Process Control ◽

Sheet Resistance ◽

Integrated Circuit ◽

Mapping Technique ◽

Gas Flows ◽

Epitaxial Silicon ◽

Contour Maps ◽

Silicon Growth ◽

Indispensable Tool

AbstractSheet resistance mapping has become an indispensable tool in characterizing ion implanters for both integrated circuit manufacturers and equipment manufacturers. The sheet resistance mapping technique is now being extended into additional applications such as the characterization of metal deposition, CVD, and epitaxial silicon growth. This technique has become especially necessary with the advent of 150mm and 200mm wafers, where 5 or 9 site measurements cannot provide sufficient data essential for process control.In order to optimize the performance of an epi reactor it is necessary to control and characterize the gas flows and temperature distributions inside the reactor. The control of these variables is essential for thickness and resistivity uniformity in epi layers. This paper describes the use of sheet resistance profiles and contour maps to study the resistivity and thickness uniformity variations in an epi reactor. The sheet resistance maps allow for control of the epi process without requiring data from other test sources.This ensures real time process control for production, as well as very rapid feedback for maintenance while doing equipment repair.

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Manufacturability of Gmr Heads: 10Gb/in2 and Beyond

MRS Proceedings ◽

10.1557/proc-614-f7.4.1 ◽

2000 ◽

Vol 614 ◽

Author(s):

S. Sahu ◽

Jian Chen ◽

V. Talghader ◽

S. Cool ◽

S. Mao

Keyword(s):

Process Control ◽

Sheet Resistance ◽

Spin Valve ◽

Single Layer ◽

Theoretical Understanding ◽

Reflection And Transmission ◽

Model Calculations ◽

Transmission Coefficients ◽

Synthetic Antiferromagnet ◽

Strong Indicator

ABSTRACTConsistency of spin-valve stack deposition, both wafer-to-wafer and within a wafer, is key to the manufacturability of GMR heads. For typical GMR heads, film thicknesses are now in the range of 5Å-150Å and process control is becoming a challenge.This paper discusses the importance of characterizing the thickness and uniformity of each material in the spin-valve stack within the context of single layer sheet films. For this study, single layer sheet films and full multilayer spin-valve stacks were deposited in a multi-target cluster tool. The sheet resistance and thickness of the single layer sheet films were measured using a 4-point probe and ellipsometry, respectively. Results were then correlated to the sheet resistance and magnetic performance (i.e., GMR ratio, exchange field, and magneto-static coupling field) of the full spin-valve stacks with a synthetic antiferromagnet as the pinned layer. The 1σ < 2% uniformity, wafer-to-wafer and within wafer, realized for the full stacks is a strong indicator of a manufacturable process.Model calculations of the sheet resistance and GMR were carried out to provide theoretical understanding of the film thickness dependence. The calculated results are well correlated with the experimental measurements. The model is based on band structures and implicitly includes the momentum-dependent reflection and transmission coefficients at the interfaces.Results from both experiments and calculations show that process control and repeatability (both within a wafer and from wafer to wafer) are crucial to the spin-valve manufacturability, offering a critical challenge to the disc drive industry as it heads into the next generation of GMR heads.

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