Effect of Process Conditions on Autodoping in Silicon Epitaxy

2008 ◽  
pp. 38-38-11
Author(s):  
H-R Chang
Keyword(s):  
Process Conditions ◽  
Silicon Epitaxy

Optimization of Process Conditions for Selective Silicon Epitaxy Using Disilane, Hydrogen, and Chlorine

1997 ◽  
Vol 144 (9) ◽  
pp. 3309-3315 ◽  
Author(s):  
Patricia A. O'Neil ◽  
Mehmet C. Öztürk ◽  
Katherine E. Violette ◽  
Dale Batchelor ◽  
Kim Christensen ◽  
...  
Keyword(s):  
Process Conditions ◽  
Silicon Epitaxy

Facet Free Selective Silicon Epitaxy by Rapid Thermal Chemical Vapor Deposition

1998 ◽  
Vol 525 ◽  
Author(s):  
Katherine E. Violette ◽  
Rick Wise ◽  
Chih-Ping Chao ◽  
Sreenath Unnikrishnan
Keyword(s):  
Growth Rate ◽  
Deposition Rate ◽  
Silicon Surface ◽  
Chemical Vapor ◽  
Process Conditions ◽  
Selective Epitaxy ◽  
Silicon Epitaxy ◽  
Surface Mobility ◽  
Polysilicon Gate ◽  
Initial Stage

ABSTRACTA facet-free, selective epitaxy process has been identified using the SiH2CI2 /HCI/H2 chemistry in a commercially available, single-wafer epitaxy reactor. The pre-epitaxy bake required a minimum of 900°C in order to obtain a clean silicon surface with reasonable throughput while preserving the integrity of the shallow trench isolation structures. The epitaxy growth rate ranged from as low as 130Å/rnin at 825°C, 10 torr to as high as 1500 Å/min at 875°C and 70 torr while the deposition rate of polysilicon on polysilicon differed significantly: at 10 torr, the epitaxy growth rate is greater by as much as 50%, and at 70 torr the polysilicon deposition rate is greater by as much as 40%. The facet suppression depended heavily on two things: the undercut beneath the polysilicon gate sidewall insulator and the process pressure. The undercut is believed to be responsible for suppressing the initial stage of facet formation, most probably by completely eliminating lateral overgrowth of the crystal. The process conditions then enable continued facet suppression perhaps by restricting the silicon surface mobility. The sidewall structure and process conditions combine to make a reliably facet-free selective epitaxy process

Electron microscopy study of reactively sputter-deposited Ti/N films on silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1362-1363
Author(s):  
V. C. Kannan ◽  
A. K. Singh ◽  
R. B. Irwin ◽  
S. Chittipeddi ◽  
F. D. Nkansah ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Hexagonal Phase ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Process Conditions ◽  
Tin Films ◽  
Wide Range ◽  
Fcc Phase ◽  
Circuits Vlsi

Titanium nitride (TiN) films have historically been used as diffusion barrier between silicon and aluminum, as an adhesion layer for tungsten deposition and as an interconnect material etc. Recently, the role of TiN films as contact barriers in very large scale silicon integrated circuits (VLSI) has been extensively studied. TiN films have resistivities on the order of 20μ Ω-cm which is much lower than that of titanium (nearly 66μ Ω-cm). Deposited TiN films show resistivities which vary from 20 to 100μ Ω-cm depending upon the type of deposition and process conditions. TiNx is known to have a NaCl type crystal structure for a wide range of compositions. Change in color from metallic luster to gold reflects the stabilization of the TiNx (FCC) phase over the close packed Ti(N) hexagonal phase. It was found that TiN (1:1) ideal composition with the FCC (NaCl-type) structure gives the best electrical property.

Innovative electrotechnological systems to provide the temperature modes of technological pipelines

2019 ◽  
Vol 2 (1) ◽  
pp. 29-39 ◽  
Author(s):  
S. G. Konesev ◽  
P. A. Khlyupin
Keyword(s):  
Induction Heating ◽  
Thermal Exposure ◽  
Heating System ◽  
The Arctic ◽  
Process Conditions ◽  
Heating Systems ◽  
Fluid Properties ◽  
Low Efficiency ◽  
Extreme North ◽  
Induction Heating System

Introduction: the systems of thermal effects on thermo-dependent, viscous and highly viscous liquids under conditions of the Arctic and the Extreme North are considered. Low efficiency and danger of heating systems based on burned hydrocarbons, heated liquids and steam are shown. Electrothermal heating systems used to maintain thermo-dependent fluids in a fluid state are considered. The evaluation of the effectiveness of the application of the most common electrothermal system — heating cables (tapes). The most effective electrothermal system based on induction technologies has been determined. Materials and methods: considered methods of thermal exposure to maintain the fluid properties of thermo-dependent fluids at low extreme temperatures. Results: presents an induction heating system and options for its implementation in the Extreme North and the Arctic. Conclusions: induction heating system to minimize loss of product quality, improve the system performance under changing process conditions, eliminate fire product, to reduce the influence of the human factor.

Corrosion monitoring and root cause identification in high solids concentrators

TAPPI Journal ◽  
2016 ◽  
Vol 15 (7) ◽  
pp. 467-477
Author(s):  
PASI NIEMELAINEN ◽  
MARTTI PULLIAINEN ◽  
JARMO KAHALA ◽  
SAMPO LUUKKAINEN
Keyword(s):  
Paper Industry ◽  
Black Liquor ◽  
Construction Materials ◽  
Open Circuit ◽  
Process Conditions ◽  
Potential Range ◽  
Corrosion Monitoring ◽  
General Corrosion ◽  
High Solids ◽  
Passive Area

Black liquor high solids (about 80%) concentrators have often been found to suffer from aggressive corrosion. In particular, the first and second effect bodies are susceptible to corrosion attacks resulting in tube leaks and wall thinning, which limit the availability and lifetime of evaporator lines. Corrosion dynamics and construction materials have been studied extensively within the pulp and paper industry to understand the corrosion process. However, it has been challenging to identify root causes for corrosion, which has limited proactive measures to minimize corrosion damage. Corrosion of the first phase concentrator was studied by defining the potential regions for passive area, stress corrosion cracking, pitting corrosion, and general corrosion. This was achieved by using a technique called polarization scan that reveals ranges for the passive area in which the equipment is naturally protected against corrosion. The open circuit potential, also known as corrosion potential, and linear polarization resistance of the metal were monitored online, which allowed for definition of corrosion risks for stainless steel 304L and duplex stainless steels 2205 and SAF 2906. An online temperature measurement added insight to the analysis. A process diagnostics tool was used to identify root causes of the corrosion attacks. Many of the root causes were related to process conditions triggering corrosion. Once the metal surface was activated, it was difficult to repassivate the metal naturally unless a sufficient potential range was reached.

Study on the Chemical Modification Process of Jute Fiber

TAPPI Journal ◽  
2010 ◽  
Vol 9 (2) ◽  
pp. 23-29 ◽  
Author(s):  
Wei-ming Wang ◽  
Zai-sheng Cai ◽  
Jian-yong Yu
Keyword(s):  
Sodium Hydroxide ◽  
Sodium Silicate ◽  
Treatment Time ◽  
Jute Fiber ◽  
Process Conditions ◽  
Silicate Concentration ◽  
Sodium Hydroxide Concentration ◽  
Liquor Ratio ◽  
Degumming Process ◽  
Selection Of

Degumming of pre-chlorite treated jute fiber was studied in this paper. The effects of sodium hydroxide concentration, treatment time, temperature, sodium silicate concentration, fiber-to-liquor ratio, penetrating agent TF-107B concentration, and degumming agent TF-125A concentration were the process conditions examined. With respect to gum decomposition, fineness and mechanical properties, sodium hydroxide concentration, sodium silicate concentration, and treatment time were found to be the most important parameters. An orthogonal L9(34) experiment designed to optimize the conditions for degumming resulted in the selection of the following procedure: sodium hydroxide of 12g/L, sodium silicate of 3g/L, TF-107B of 2g/L, TF-125A of 2g/L, treatment time of 105 min, temperature of 100°C and fiber to liquor ratio of 1:20. The effect of the above degumming process on the removal of impurities was also examined and the results showed that degumming was an effective method for removing impurities, especially hemicellulose.

Conversion of fructose into methyl lactate over SnO2/Al2O3 catalystin flow regime

2020 ◽  
pp. 43-47
Author(s):  
S.V. Prudius ◽  
◽  
N.L. Hes ◽  
A.M. Mylin ◽  
V.V. Brei ◽  
...  
Keyword(s):  
Flow Reactor ◽  
Practical Interest ◽  
Dimethyl Acetal ◽  
Racemic Mixture ◽  
Process Conditions ◽  
Impregnation Method ◽  
Aqueous Methanol ◽  
Methyl Lactate ◽  
Al2o3 Catalyst ◽  
Target Reaction

In recent years, numerous researchers have focused on the development of catalytic methods for processing of biomass-derived sugars into alkyl lactates, which are widely used as non-toxic solvents and are the starting material for obtaining monomeric lactide. In this work, the transformation of fructose into methyl lactate on Sn-containing catalyst in the flow reactor that may be of practical interest was studied. The supported Sn-containing catalyst was ob-tained by a simple impregnation method of granular γ-Al2O3. The catalytic ex-periments were performed in a flow reactor at temperatures of 160-190 °C and pressure of 3.0 MPa. The 1.6-9.5 wt.% fructose solutions in 80% aqueous methanol were used as a reaction mixture. It was found that addition to a reac-tion mixture of 0.03 wt.% potassium carbonate leads to the increase in selec-tivity towards methyl lactate on 15% at 100% conversion of fructose. Prod-ucts of the target reaction С6Н12О6 + 2СН3ОН = 2С4Н8О3 + 2Н2О were ana-lyzed using 13C NMR method. The following process conditions for obtaining of 65 mol% methyl lactate yield at 100% fructose conversion were found: use of 4.8 wt.% fructose solution in 80% methanol, 180 °С, 3.0 МПа and a load on catalyst 1.5 mmol C6H12O6/mlcat/h at contact time of 11 minutes. The cata-lyst productivity is 2.0 mmol C4H8O3/mlcat/h and the by-productі are 1,3-dihydroxyacetone dimethyl acetal (20%) and 5-hydroxymethylfurfural (10%). It should be noted that a racemic mixture of L- and D-methyl lactates has been obtained by conversion of D-fructose on the SnO2/Al2O3 catalyst. The SnO2/Al2O3 catalyst was found to be stable for 6 h while maintaining full fruc-tose conversion at 55–70% methyl lactate selectivity. After regeneration the catalyst completely restores the initial activity.

Scalability of MOCVD-deposited Hafnium Oxide

2003 ◽  
Vol 765 ◽  
Author(s):  
S. Van Elshocht ◽  
R. Carter ◽  
M. Caymax ◽  
M. Claes ◽  
T. Conard ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Deposition Process ◽  
Oxide Thickness ◽  
Process Conditions ◽  
Primary Concern ◽  
Gate Electrode ◽  
K Value ◽  
High K

AbstractBecause of aggressive downscaling to increase transistor performance, the physical thickness of the SiO2 gate dielectric is rapidly approaching the limit where it will only consist of a few atomic layers. As a consequence, this will result in very high leakage currents due to direct tunneling. To allow further scaling, materials with a k-value higher than SiO2 (“high-k materials”) are explored, such that the thickness of the dielectric can be increased without degrading performance.Based on our experimental results, we discuss the potential of MOCVD-deposited HfO2 to scale to (sub)-1-nm EOTs (Equivalent Oxide Thickness). A primary concern is the interfacial layer that is formed between the Si and the HfO2, during the MOCVD deposition process, for both H-passivated and SiO2-like starting surfaces. This interfacial layer will, because of its lower k-value, significantly contribute to the EOT and reduce the benefit of the high-k material. In addition, we have experienced serious issues integrating HfO2 with a polySi gate electrode at the top interface depending on the process conditions of polySi deposition and activation anneal used. Furthermore, we have determined, based on a thickness series, the k-value for HfO2 deposited at various temperatures and found that the k-value of the HfO2 depends upon the gate electrode deposited on top (polySi or TiN).Based on our observations, the combination of MOCVD HfO2 with a polySi gate electrode will not be able to scale below the 1-nm EOT marker. The use of a metal gate however, does show promise to scale down to very low EOT values.

Discovery of a direct sea route to India: open-sea travel and the Bab el-Mandeb barrier

2020 ◽  
Author(s):  
Mateusz Lisak
Keyword(s):  
Sudden Change ◽  
Process Conditions ◽  
Direct Connection ◽  
The Troubles ◽  
Trade Relations ◽  
Open Sea

The issue of discovery of a sea route to India is one of the most important questions about Indo-Roman trade relations and it has yet to be resolved. Historians tend to focus on who and when made the first open-sea journey, and whether it was a sudden change or a process. Conditions essential for discovery of a new route are not considered (not clear – are not considered here, in this paper?), nor are the circumstances that would have made this journey possible. Another issue (of what?) is the case of the Arabia Eudaimon port. The 1st-century AD Periplus Maris Erythraei states that the port had been ransacked and there was no direct connection between India and Egypt, but that all ships were forced to stop there. Thus the resumption of active trade with India necessitated the lifting of the tentative blockade of Arabia Eudaimon and discovering the trans-oceanic route. The nautical guide, however, does not describe the new repute in the context of the troubles in Bab el-Mandeb, but can we be really sure that these two events were not related? What were the circumstances and conditions that had to be met for it to be possible to discover a new route?

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