Red luminescence from a focused ion beam modified silicon surface

1998 ◽  
Vol 16 (6) ◽  
pp. 3301 ◽  
Author(s):  
L. E. Erickson
Keyword(s):  
Silicon Surface ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Red Luminescence

Annealing recovery of nanoscale silicon surface damage caused by Ga focused ion beam

2015 ◽  
Vol 343 ◽  
pp. 56-69 ◽  
Author(s):  
Y.J. Xiao ◽  
F.Z. Fang ◽  
Z.W. Xu ◽  
X.T. Hu
Keyword(s):  
Silicon Surface ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Surface Damage

scholarly journals Investigation of the effect of annealing on Si(100) substrate modified by Ga+ focused ion beam

2021 ◽  
Vol 2086 (1) ◽  
pp. 012027
Author(s):  
M M Eremenko ◽  
N A Shandyba ◽  
N E Chernenko ◽  
S V Balakirev ◽  
L S Nikitina ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Silicon Surface ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Substrate Material ◽  
Significant Damage

Abstract In this work, we studied the effect of annealing the silicon surface on the morphology of focused ion beam modified areas. It was found that an increase in the ion beam accelerating voltage during surface treatment significantly affects the morphology and the appearance of the implanted material on the surface or its absence/evaporation during annealing. It is shown that an increase in number of ion beam passes leads to the formation of holes on the surface of the modified areas, which is a sign that significant damage to the substrate material has occurred.

Etching characteristics of a silicon surface induced by focused ion beam irradiation

2006 ◽  
Vol 9 (1/2) ◽  
pp. 34 ◽  
Author(s):  
Noritaka Kawasegi ◽  
Noboru Morita ◽  
Shigeru Yamada ◽  
Noboru Takano ◽  
Tatsuo Oyama ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation

Gallium-Induced Milling of Silicon: A Computational Investigation of Focused Ion Beams

2008 ◽  
Vol 14 (4) ◽  
pp. 315-320 ◽  
Author(s):  
Michael F. Russo ◽  
Mostafa Maazouz ◽  
Lucille A. Giannuzzi ◽  
Clive Chandler ◽  
Mark Utlaut ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Atomic Displacement ◽  
Milling Process ◽  
Focused Ion Beams ◽  
Computational Investigation ◽  
Complementary Information ◽  
Horizontal Migration ◽  
Dynamics Simulations

Molecular dynamics simulations are performed to model milling via a focused ion beam (FIB). The goal of this investigation is to examine the fundamental dynamics associated with the use of FIBs, as well as the phenomena that govern the early stages of trench formation during the milling process. Using a gallium beam to bombard a silicon surface, the extent of lateral damage (atomic displacement) caused by the beam at incident energies of both 2 and 30 keV is examined. These simulations indicate that the lateral damage is several times larger than the beam itself and that the mechanism responsible for the formation of a V-shaped trench is due to both the removal of surface material, and the lateral and horizontal migration of subsurface silicon atoms toward the vacuum/crater interface. The results presented here provide complementary information to experimental images of trenches created during milling with FIBs.

Nanocomposite Polyurethane Foams Via POSS Blends

2002 ◽  
Vol 733 ◽  
Author(s):  
Brock McCabe ◽  
Steven Nutt ◽  
Brent Viers ◽  
Tim Haddad
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polyurethane Foams ◽  
Development Projects ◽  
Polymer Systems ◽  
Polyurethane Resin ◽  
Military Development

AbstractPolyhedral Oligomeric Silsequioxane molecules have been incorporated into a commercial polyurethane formulation to produce nanocomposite polyurethane foam. This tiny POSS silica molecule has been used successfully to enhance the performance of polymer systems using co-polymerization and blend strategies. In our investigation, we chose a high-temperature MDI Polyurethane resin foam currently used in military development projects. For the nanofiller, or “blend”, Cp7T7(OH)3 POSS was chosen. Structural characterization was accomplished by TEM and SEM to determine POSS dispersion and cell morphology, respectively. Thermal behavior was investigated by TGA. Two methods of TEM sample preparation were employed, Focused Ion Beam and Ultramicrotomy (room temperature).

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

Automated Diagonal Slice and View Solution for 3D Device Structure Analysis

2018 ◽  
Author(s):  
Sang Hoon Lee ◽  
Jeff Blackwood ◽  
Stacey Stone ◽  
Michael Schmidt ◽  
Mark Williamson ◽  
...  
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Image Data ◽  
Planar Surface ◽  
Device Structure ◽  
Cross Sectional ◽  
Device Structures ◽  
The Cross ◽  
Planar Analysis

Abstract The cross-sectional and planar analysis of current generation 3D device structures can be analyzed using a single Focused Ion Beam (FIB) mill. This is achieved using a diagonal milling technique that exposes a multilayer planar surface as well as the cross-section. this provides image data allowing for an efficient method to monitor the fabrication process and find device design errors. This process saves tremendous sample-to-data time, decreasing it from days to hours while still providing precise defect and structure data.

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