Manufacture of large-scale mechanical devices in single-crystal silicon by high-speed grinding

1992 ◽  
Author(s):  
S. T. Smith ◽  
Derek G. Chetwynd ◽  
D. Jackson
Keyword(s):  
Single Crystal ◽  
High Speed ◽  
Large Scale ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
High Speed Grinding ◽  
Mechanical Devices

High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers

2006 ◽  
Vol 100 (1) ◽  
pp. 013708 ◽  
Author(s):  
Hao-Chih Yuan ◽  
Zhenqiang Ma ◽  
Michelle M. Roberts ◽  
Donald E. Savage ◽  
Max G. Lagally
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
High Speed ◽  
Single Crystal Silicon ◽  
Flexible Polymers ◽  
Silicon Thin Film ◽  
Crystal Silicon

Optimization of Cutting Parameters for High Speed End Milling of Single Crystal Silicon by Diamond Coated Tools with Compressed Air Blowing Using RSM

2012 ◽  
Vol 576 ◽  
pp. 46-50 ◽  
Author(s):  
M.A. Mahmud ◽  
A.K.M. Nurul Amin ◽  
M.D. Arif
Keyword(s):  
Single Crystal ◽  
High Speed ◽  
End Milling ◽  
Single Crystal Silicon ◽  
Depth Of Cut ◽  
Machining Parameters ◽  
Crystal Silicon ◽  
Design Expert ◽  
Coated Tools ◽  
Optimization Of Cutting Parameters

This paper presents the thorough experimental analysis on high speed end milling of single crystal silicon using diamond coated tools. Experiments were conducted on CNC milling machine. The design of the experiments was based on the central composite design (CCD) technique of Design Expert software. Response Surface Methodology (RSM) was used to develop mathematical imperial model to establish a correlation between machining parameters (cutting speed, feed and depth of cut) and machined surface roughness in high speed end milling of single crystal silicon using 2mm diameter diamond coated tools. The optimum machining parameters were determined using the optimization tool of Design Expert software based on the desirability function. Finally, confirmation tests were performed to validate the developed model.

Study on Precision Slicing Process of Single-Crystal Silicon by Using Dicing Wire Saw

2016 ◽  
Vol 1136 ◽  
pp. 350-356 ◽  
Author(s):  
Takaaki Suzuki ◽  
Toshinori Otsuki ◽  
Ji Wang Yan
Keyword(s):  
Single Crystal ◽  
High Precision ◽  
High Speed ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Wire Saw ◽  
Hard And Brittle Materials ◽  
Feeding Speed ◽  
Wire Feeding ◽  
Control Technologies

Precision slicing tests were performed for single-crystal silicon by using a newly developed dicing wire saw system and diamond wires. The developed dicing wire saw enables slicing thick workpiece of hard and brittle materials which could not be sliced by conventional dicing machines. To achieve high precision and efficiency, the dicing wire saw system adopted tension control and high speed control technologies which provides a maximum wire feeding speed of 2000m/min. In this study, the diamond wire was driven in a single direction at a speed of 750-1750m/min and the slicing force, wire wear and workpiece surface roughness after slicing were investigated experimentally. The results showed that as a new slicing system, the developed dicing wire saw was useable for high-precision slicing of thick workpiece.

High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates

2006 ◽  
Vol 27 (6) ◽  
pp. 460-462 ◽  
Author(s):  
Jong-Hyun Ahn ◽  
Hoon-Sik Kim ◽  
Keon Jae Lee ◽  
Zhengtao Zhu ◽  
E. Menard ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
High Speed ◽  
Single Crystal Silicon ◽  
Silicon Thin Film ◽  
Crystal Silicon ◽  
Plastic Substrates

Specific Contact Resistance Measurements on Multilayer Interconnect Structures.

1983 ◽  
Vol 25 ◽  
Author(s):  
H.B. Harrison ◽  
G.K. Reeves
Keyword(s):  
Contact Resistance ◽  
Transmission Line ◽  
Single Crystal ◽  
Large Scale ◽  
Single Crystal Silicon ◽  
Vlsi Circuits ◽  
Specific Contact Resistance ◽  
Crystal Silicon ◽  
Specific Contact ◽  
Interfacial Contact Resistance

ABSTRACTAn integral part of very large scale integrated (VLSI) circuits is the multilayer structures for electrical interconnection and insulation. Many conducting materials are used for interconnection including polysilicon, silicon, silicides, polycides and metals. An important point in considering these materials is the interconnection between them and the corresponding characterization of the interface by way of the specific contact resistance, which directly affects the interfacial contact resistance.For a planar ohmic contact formed between a metal and any layer with a much larger sheet resistance (for example single crystal silicon) a technique based on the transmission line model provides a method of characterizing these contacts. However, for planar contacts between layers with comparable sheet resistivities for example polysilicon to single crystal silicon this technique must be modified. In this paper we review the transmission line approach used to obtain the specific contact resistance between such layers and provide initial results of measurements made on the poly to single crystal interface. We also present a series of test structures, currently under fabrication that will provide more detailed experimental data.

Polycrystalline Silicon as a Mechanical Material

1990 ◽  
Vol 182 ◽  
Author(s):  
Richard S. Muller
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Polycrystalline Silicon ◽  
Single Crystal Silicon ◽  
Review Article ◽  
Selective Etching ◽  
Crystal Silicon ◽  
Mechanical Devices ◽  
Silicon Based

In 1982, Kurt Petersen published “Silicon as a Mechanical Material” in the Proceedings of the IEEE. This thorough review article heightened focus on the advantages of utilizing the mechanical as well as electrical properties of single-crystal silicon. Processes for shaping single-crystal silicon based upon selective etching were shown in the article to make silicon useful for a variety of miniature mechanical devices.

Micro/Nanochannel Emulsification for Generating Monosize Droplets

2012 ◽  
Author(s):  
Isao Kobayashi ◽  
Mitsutoshi Nakajima
Keyword(s):  
Droplet Size ◽  
High Speed ◽  
Large Scale ◽  
Single Crystal Silicon ◽  
Continuous Phase ◽  
Silicon On Insulator ◽  
Droplet Generation ◽  
High Tech ◽  
Scale Production ◽  
Crystal Silicon

Emulsification is an important process in various fields including foods, pharmaceuticals, cosmetics, and chemicals. Emulsification operation is commonly conducted using conventional emulsification devices, such as high-speed blenders, colloid mills, high-pressure homogenizers, and ultrasonic homogenizers. However, these emulsification devices result in the production of polydisperse emulsions with wide droplet size distributions and poor controllability in droplet size and its distribution. In contrast, monodisperse emulsions consisting of monosize droplets have received a great deal of attentions over the past decade due to their high-tech applications, e.g., monosize microparticles as spacers for electronic devices and monosize micro-carriers for drug delivery systems (DDS). Our group proposed microchannel (MC) emulsification as a promising technique to produce monodisperse emulsions in the mid 1990s. Micro/Nanochannel (MNC) emulsification enables generating monosize droplets with the smallest coefficient of variation (CV) of below 5% using MC and nanochannel (NC) arrays of unique geometry. The resultant droplet size, which ranged from 0.5 to 200 μm, can be precisely controlled by channel geometry. Droplet generation for MNC emulsification is very mild and does not require any external shear stress; a dispersed phase that passed through channels is transformed spontaneously into monosize droplets inside a continuous-phase domain. The aim of this paper is to present recent developments in MNC emulsification chips, particularly focusing on asymmetric straight-through MC arrays for large-scale production of monodisperse emulsions. Asymmetric straight-through MC array chips were fabricated using a silicon-on-insulator wafer. Numerous asymmetric straight-through MCs each consisting of a microslot and a narrow MC were positioned in the central region of the chip. Monosize droplets were stably generated via asymmetric straight-through MCs at high production rates. Below a critical droplet production rate, monosize droplets were generated via asymmetric straight-through MCs, with droplet size and size distribution independent of the droplet productivity. The use of a large asymmetric straight-through MC array chip achieved the mass production of monosize tetradecane oil droplets at ∼1 L/h. The simulation results using CFD (computational fluid dynamics) agreed well with the experimental results and provided useful information, such as the movement of the oil-water interface during droplet generation. Monosize submicron droplets were also obtained using NC emulsification chips made of single-crystal silicon.

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