Study of thermophysical properties of crystalline silicon and silicon-rich silicon oxide layers

2014 ◽  
Vol 302 ◽  
pp. 213-215 ◽  
Author(s):  
O.O. Gavrylyuk ◽  
O.Yu. Semchyk ◽  
O.L. Bratus ◽  
A.A. Evtukh ◽  
O.V. Steblova ◽  
...  
Keyword(s):  
Thermophysical Properties ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Oxide Layers

scholarly journals Coupled Investigation of Contact Potential and Microstructure Evolution of Ultra-Thin AlOx for Crystalline Si Passivation

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1803
Author(s):  
Zhen Zheng ◽  
Junyang An ◽  
Ruiling Gong ◽  
Yuheng Zeng ◽  
Jichun Ye ◽  
...  
Keyword(s):  
Structural Changes ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Contact Potential Difference ◽  
Potential Difference ◽  
Kelvin Probe ◽  
Contact Potential ◽  
Carrier Lifetimes ◽  
Transmission Electron ◽  
Effective Carrier

In this work, we report the same trends for the contact potential difference measured by Kelvin probe force microscopy and the effective carrier lifetime on crystalline silicon (c-Si) wafers passivated by AlOx layers of different thicknesses and submitted to annealing under various conditions. The changes in contact potential difference values and in the effective carrier lifetimes of the wafers are discussed in view of structural changes of the c-Si/SiO2/AlOx interface thanks to high resolution transmission electron microscopy. Indeed, we observed the presence of a crystalline silicon oxide interfacial layer in as-deposited (200 °C) AlOx, and a phase transformation from crystalline to amorphous silicon oxide when they were annealed in vacuum at 300 °C.

Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact

1999 ◽  
Vol 85 (5) ◽  
pp. 2921-2928 ◽  
Author(s):  
Toshiko Mizokuro ◽  
Kenji Yoneda ◽  
Yoshihiro Todokoro ◽  
Hikaru Kobayashi
Keyword(s):  
Low Temperature ◽  
Electron Impact ◽  
Silicon Oxide ◽  
Nitrogen Plasma ◽  
Low Energy ◽  
Energy Electron ◽  
Oxide Layers ◽  
Low Energy Electron

Room Temperature Band-Edge Luminescence from Silicon Grains Prepared by the Recrystallization of Mesoporous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
Karen L. Moore ◽  
Leonid Tsybeskov ◽  
Philippe M. Fauchet ◽  
Dennis G. Hall
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Band Edge ◽  
Applied Bias ◽  
Mesoporous Silicon ◽  
Room Temperature Photoluminescence ◽  
Band Edge Luminescence ◽  
A Current ◽  
Better Than

AbstractRoom-temperature photoluminescence (PL) peaking at 1.1 eV has been found in electrochemically etched mesoporous silicon annealed at 950°C. Low-temperature PL spectra clearly show a fine structure related to phonon-assisted transitions in pure crystalline silicon (c-Si) and the absence of defect-related (e.g.P-line) and impurity-related (e.g.oxygen, boron) transitions. The maximum PL external quantum efficiency (EQE) is found to be better than 0.1% with a weak temperature dependence in the region from 12K to 400K. The PL intensity is a linear function of excitation intensity up to 100 W/cm2. The PL can be suppressed by an external electric field ≥ 105 V/cm. Room temperature electroluminescence (EL) related to the c-Si band-edge is also demonstrated under an applied bias ≤ 1.2 V and with a current density ≈ 20 mA/cm2. A model is proposed in which the radiative recombination originates from recrystallized Si grains within a non-stoichiometric Si-rich silicon oxide (SRSO) matrix.

Cellular automaton model of phase separation during annealing of nonstoichiometric silicon oxide layers

2015 ◽  
Vol 44 (8) ◽  
pp. 523-530 ◽  
Author(s):  
G. Ya. Krasnikov ◽  
N. A. Zaitsev ◽  
I. V. Matyushkin ◽  
S. V. Korobov
Keyword(s):  
Phase Separation ◽  
Cellular Automaton ◽  
Silicon Oxide ◽  
Cellular Automaton Model ◽  
Oxide Layers

Tailored Si-Layers on Silicon Oxide Obtained by Thermal CVD

1997 ◽  
Vol 485 ◽  
Author(s):  
G. Beaucarne ◽  
J. Poortmans ◽  
M. Caymax ◽  
J. Nijs ◽  
R. Mertens
Keyword(s):  
Gas Flow ◽  
Silicon Solar Cell ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Growth Parameters ◽  
Nucleation Theory ◽  
Crystalline Silicon Solar Cell ◽  
Qualitative Explanation ◽  
Nucleus Density ◽  
Thermal Cvd

AbstractIn this paper, a method to obtain by CVD Si layers on silicon oxide with the desired grain size is described, involving nucleation control through the growth parameters. Nucleation experiments are carried out with a hydrogen - dichlorosilane - HCl ambient at high temperature. The nucleus density is observed to drop to low values at a threshold HCl-flow. A qualitative explanation using concepts from atomistic nucleation theory is proposed. The effect of addition of diborane to the gas flow is investigated and appears to be small or non-existent . Finally, preliminary results of a thin-film crystalline silicon solar cell process applied on such layers are given to illustrate the potential of such layers.

Light Emission from Intrinsic and Doped Silicon-Rich Silicon Oxide: from the Visible to 1.6 ΜM

1996 ◽  
Vol 452 ◽  
Author(s):  
L. Tsybeskov ◽  
K. L. Moore ◽  
P. M. Fauchet ◽  
D. G. Hall
Keyword(s):  
Rare Earth ◽  
External Quantum Efficiency ◽  
Room Temperature ◽  
Structural Modification ◽  
Silicon Oxide ◽  
Light Emission ◽  
Crystalline Silicon ◽  
Light Emitting ◽  
Infra Red ◽  
Doped Silicon

AbstractSilicon-rich silicon oxide (SRSO) films were prepared by thermal oxidation (700°C-950°C) of electrochemically etched crystalline silicon (c-Si). The annealing-oxidation conditions are responsible for the chemical and structural modification of SRSO as well as for the intrinsic light-emission in the visible and near infra-red spectral regions (2.0–1.8 eV, 1.6 eV and 1.1 eV). The extrinsic photoluminescence (PL) is produced by doping (via electroplating or ion implantation) with rare-earth (R-E) ions (Nd at 1.06 μm, Er at 1.5 μm) and chalcogens (S at ∼1.6 μm). The impurities can be localized within the Si grains (S), in the SiO matrix (Nd, Er) or at the Si-SiO interface (Er). The Er-related PL in SRSO was studied in detail: the maximum PL external quantum efficiency (EQE) of 0.01–0.1% was found in samples annealed at 900°C in diluted oxygen (∼ 10% in N2). The integrated PL temperature dependence is weak from 12K to 300K. Light emitting diodes (LEDs) with an active layer made of an intrinsic and doped SRSO are manufactured and studied: room temperature electroluminescence (EL) from the visible to 1.6 μmhas been demonstrated.

The Deposition of Silicon Oxide Films by LPCVD at Temperatures as Low as 100°C from a New Liquid Source

1992 ◽  
Vol 282 ◽  
Author(s):  
K. Hochberg ◽  
David A. Roberts
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Temperature Sensitive ◽  
Oxide Layers ◽  
Low Temperature Deposition ◽  
Liquid Source ◽  
Temperature Deposition ◽  
Higher Temperature

ABSTRACTA precursor for the LPCVD of silicon oxide films has been developed that extends the low temperature deposition range to 100°C. The chemical, 1,4 disilabutane (DSB), produces silicon oxide depositions similar to those of the higher temperature silane and diethylsilane (DES) processes. Optimum DSB processes require pressures below 300 mTorr, similar to silane, in contrast to DES pressures above 600 mTorr at 350°C. This results in poorer conformalities than those of DES, but the step coverages are still superior to those from silane oxides. The DSB films are low stress, carbon-free oxide layers that are suitable for temperature-sensitive underlayers and substrates such as photoresist, plastics, GaAs, and HgCdTe.

The Recrystallization Depth Control of the Excimer-Laser-Recrystallized Poly-Crystalline Silicon Film

1999 ◽  
Vol 557 ◽  
Author(s):  
Kee-Chan Park ◽  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Film Structure ◽  
Excimer Laser Annealing ◽  
Silicon Oxide Layer ◽  
Thin Oxide Film

AbstractA novel method to control the recrystallization depth of amorphous silicon (a-Si) film during the excimer laser annealing (ELA) is proposed in order to preserve a-Si that is useful for fabrication of poly-Si TFT with a-Si offset in the channel. A XeCl excimer laser beam is irradiated on a triple film structure of a-Si thin native silicon oxide (~20Å)/thick a-Si layer. Only the upper a-Si film is recrystallized by the laser beam irradiation, whereas the lower thick a-Si film remains amorphous because the thin native silicon oxide layer stops the grain growth of the poly-crystalline silicon (poly-Si). So that the thin oxide film sharply divides the upper poly-Si from the lower a-Si.

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