Phase evolution and electrical properties of Co–Sb alloys fabricated from Co/Sb bilayers by thermal annealing and ion beam mixing

2015 ◽  
Vol 17 (37) ◽  
pp. 24427-24437 ◽  
Author(s):  
Manju Bala ◽  
Compesh pannu ◽  
Srashti Gupta ◽  
Tripurari S. Tripathi ◽  
Surya K. Tripathi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermoelectric Power ◽  
Thermal Annealing ◽  
Ion Beam ◽  
Phase Evolution ◽  
Ion Beam Mixing ◽  
Power Enhancement

Thermoelectric power enhancement of ion beam synthesized Co–Sb alloy thin films.

Ion-beam mixing and thermal annealing of Al–Nb and Al–Ta thin films

1988 ◽  
Vol 3 (6) ◽  
pp. 1082-1088 ◽  
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. G. Mendiratta ◽  
P. R. Subramanian ◽  
D. M. Dimiduk
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Phase Formation ◽  
Ion Beam ◽  
Amorphous Films ◽  
Individual Layer ◽  
Ion Beam Mixing ◽  
Partial Reaction ◽  
Complete Reaction ◽  
The Individual

Ion-beam mixing and thermal annealing of thin, alternating layers of Al and Nb, as well as Al and Ta, were investigated by selected area diffraction and Rutherford backscattcring. The individual layer thicknesses were adjusted to obtain the overall compositions as Al3Nb and Al3Ta. The films were ion mixed with 1 MeV Au+ ions at a dose of 1 × 1016 ions cm−2. Uniform mixing and amorphization were achieved for both Al−Nb and Al−Ta systems. Equilibrium crystalline A13Nb and Al13Ta phases were formed after annealing of ion mixed amorphous films at 400 °C for 1 h. Unmixed films, however, remained unreacted at 400 °C for 1 h. Partial reaction was observed in the unmixed film of Al–Nb at 400 °C for 6 h. After annealing at 500 °C for 1 h, a complete reaction and formation of Al3Nb and Al3Ta phases in the respective films were observed. The influence of thermodynamics on the phase formation by ion mixing and thermal annealing is discussed.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

Ion beam mixing and interdiffusion in magnetite thin films

2016 ◽  
Author(s):  
M. Krupska ◽  
N-T. H. Kim Ngan ◽  
S. Sowa ◽  
Z. Tarnawski ◽  
L. Havela ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Mixing
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